ROHM 2SD1760Q

2SD1760 / 2SD1864
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
!External dimensions (Units : mm)
2SD1864
1.0±0.2
0.9
1.0
(3)
1.05
Limits
Unit
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
(1) Base
(2) Collector
(3) Emitter
IC
3
A (DC)
4.5
PC
15
1
A (Pulse) *1
W (Tc =25°C)*2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
*1 Single pulse, P = 100ms
*2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
W
(2)
2.54 2.54
Symbol
2SD1760
2SD1864
(1)
(1) (2) (3)
Collector-base voltage
Collector power
dissipation
0.5±0.1
0.55±0.1
2.3±0.2 2.3±0.2
!Absolute maximum ratings (Ta = 25°C)
Collector current
0.65Max.
0.9
ROHM : CPT3
EIAJ : SC-63
Parameter
9.5±0.5
1.5
0.9
0.65±0.1
0.75
!Structure
Epitaxial planar type
NPN silicon transistor
2.5±0.2
6.8±0.2
2.3 +0.2
−0.1
0.5±0.1
4.4±0.2
C0.5
14.5±0.5
6.5±0.2
5.1 +0.2
−0.1
2.5
1.5±0.3
2SD1760
5.5 +0.3
−0.1
!Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1184 / 2SB1243.
ROHM : ATV
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
2SD1760 / 2SD1864
Transistors
!Electrical characteristics (Ta = 25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
60
-
-
V
IC = 50µA
Collector-emitter breakdown voltage
BVCEO
50
-
-
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
5
-
-
V
IE = 50µA
ICBO
-
-
1
µA
VCB = 40V
VEB = 4V
Parameter
Collector cutoff current
IEBO
-
-
1
µA
VCE (sat)
-
0.5
1
V
IC/IB = 2A/0.2A
hFE
82
-
390
-
VCE = 3V, IC = 0.5A
Transition frequency
fT
-
90
-
MHz
Output capacitance
Cob
-
40
-
pF
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
*
Conditions
VCE = 5V, IE = −500mA, f = 30MHz
*
*
*
VCB = 10V, IE = 0A, f = 1MHz
Measured using pulse current.
!Packaging specifications and hFE
Package
Type
hFE
2SD1760
PQR
2SD1864
PQR
hFE values are classified as follows:
Taping
Code
Basic ordering
unit (pieces)
TL
TV2
2500
2500
Item
P
Q
R
hFE
82~180
120~270
180~390
-
!Electrical characteristic curves
VCE = 3V
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
5
2
1
0.5
Ta = 100°C
25°C
-25°C
0.2
0.1
0.05
2.5
3.0
40mA
35mA
30mA
25mA
20mA
Ta = 25°C
45mA
50mA
COLLECTOR CURRENT : IC (A)
3.0
10
2.0
15mA
1.5
10mA
1.0
5mA
0.5
50mA
45mA
40mA
35mA
30mA
25mA
2.5
2.0
20mA
15mA
1.5
10mA
1.0
IB = 5mA
0.5
PC = 15W
0.02
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
3
4
1000
500
5
200
VCE = 5V
100
50
3V
20
10
5
200
VCE = 3V
Ta = 100°C
100
50
25°C
-25°C
20
10
5
2
2
1
0.01 0.02 0.05 0.1 0.2 0.5
1
2
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs.
collector current( Ι )
5
10
1
0.01 0.02 0.05 0.1 0.2
0.5
1
2
10
20
30
40
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded-emitter output
characteristics( ΙΙ )
500
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
2
Fig.2 Grounded emitter output
characteristics ( Ι )
Fig.1 Grounded emitter propagation
characteristics
Ta = 25°C
1
0
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
1000
IB = 0mA
5
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain vs.
collector curren( ΙΙ )
10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
0.01
0
Ta = 25°C
10
Ta = 25°C
5
2
1
0.5
0.2
IC/IB = 50
0.1
0.05
20
10
0.02
0.01
0.010.02 0.05 0.1 0.2
0.5
1
2
5
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
2SD1760 / 2SD1864
2
1
0.5
Ta = -25°C
100°C
VBE (sat)
25°C
0.2
0.1
Ta = 100°C
-25°C
0.05
0.02
25°C
VCE (sat)
0.01
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
50
20
10
5
2
2
5
10 20
50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area
(2SD1760)
100
10
1
0.1
1
10
100
1
10Sec 100Sec1000Sec
TIME : T (ms)
Fig.13 Transient thermal resistance
(2SD1864)
10
5
2
1
0.1 0.2
0.5
1
2
5
10 20
50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector output capacitance
vs. collector-base voltage
Fig.8 Gain bandwidth product vs.
emitter current
TRANSIENT THERMAL RESISTANCE : Rth (°C/W)
0.02 Ta = 25°C
Single pulse
0.01 *
0.1 0.2 0.5 1
20
5
VCE=5v
IC=0.2A
100
10
1
0.1
1
10
100
1Sec 10Sec 100Sec
TIME : T (ms)
Fig.11 Transient thermal resistance
(2SD1760)
2
c
Se
0m Sec
m
00
0.05
5001000
50
=1
0.1
50 100 200
100
=1
*
ms
DC
0.2
10 20
200
1
DC
00
s*
0m
=1
0.5
5
Ta = 25°C
f = 1MHz
IE = 0A
500
Pw
=1
PW
1
2
1000
Pw
2
1
EMITTER CURRENT : −IE (mA)
COLLECTOR CURRENT : IC (A)
PW
COLLECTOR CURRENT : IC (A)
100
1
Fig.7 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation voltage
vs. collector current
TRANSIENT THERMAL RESISTANCE : Rt h (°C/W)
200
10
5
Ta = 25°C
VCE = 5V
500
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
lC/lB = 10
5
COLLECTOR CURRENT : IC (A)
10
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
BASE SATURATION VOLTAGE
: VBE (sat) (V)
Transistors
0.5
0.2
0.1
0.05 Ta=25°C
Single
nonrepetitive
0.02 pulse
0.2 0.5 1
2
5
10 20
50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.12 Safe operating area
(2SD1864)