2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1864 1.0±0.2 0.9 1.0 (3) 1.05 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V (1) Base (2) Collector (3) Emitter IC 3 A (DC) 4.5 PC 15 1 A (Pulse) *1 W (Tc =25°C)*2 W Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C *1 Single pulse, P = 100ms *2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. W (2) 2.54 2.54 Symbol 2SD1760 2SD1864 (1) (1) (2) (3) Collector-base voltage Collector power dissipation 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 !Absolute maximum ratings (Ta = 25°C) Collector current 0.65Max. 0.9 ROHM : CPT3 EIAJ : SC-63 Parameter 9.5±0.5 1.5 0.9 0.65±0.1 0.75 !Structure Epitaxial planar type NPN silicon transistor 2.5±0.2 6.8±0.2 2.3 +0.2 −0.1 0.5±0.1 4.4±0.2 C0.5 14.5±0.5 6.5±0.2 5.1 +0.2 −0.1 2.5 1.5±0.3 2SD1760 5.5 +0.3 −0.1 !Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base 2SD1760 / 2SD1864 Transistors !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 60 - - V IC = 50µA Collector-emitter breakdown voltage BVCEO 50 - - V IC = 1mA Emitter-base breakdown voltage BVEBO 5 - - V IE = 50µA ICBO - - 1 µA VCB = 40V VEB = 4V Parameter Collector cutoff current IEBO - - 1 µA VCE (sat) - 0.5 1 V IC/IB = 2A/0.2A hFE 82 - 390 - VCE = 3V, IC = 0.5A Transition frequency fT - 90 - MHz Output capacitance Cob - 40 - pF Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio * Conditions VCE = 5V, IE = −500mA, f = 30MHz * * * VCB = 10V, IE = 0A, f = 1MHz Measured using pulse current. !Packaging specifications and hFE Package Type hFE 2SD1760 PQR 2SD1864 PQR hFE values are classified as follows: Taping Code Basic ordering unit (pieces) TL TV2 2500 2500 Item P Q R hFE 82~180 120~270 180~390 - !Electrical characteristic curves VCE = 3V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 5 2 1 0.5 Ta = 100°C 25°C -25°C 0.2 0.1 0.05 2.5 3.0 40mA 35mA 30mA 25mA 20mA Ta = 25°C 45mA 50mA COLLECTOR CURRENT : IC (A) 3.0 10 2.0 15mA 1.5 10mA 1.0 5mA 0.5 50mA 45mA 40mA 35mA 30mA 25mA 2.5 2.0 20mA 15mA 1.5 10mA 1.0 IB = 5mA 0.5 PC = 15W 0.02 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 3 4 1000 500 5 200 VCE = 5V 100 50 3V 20 10 5 200 VCE = 3V Ta = 100°C 100 50 25°C -25°C 20 10 5 2 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current( Ι ) 5 10 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 10 20 30 40 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded-emitter output characteristics( ΙΙ ) 500 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 2 Fig.2 Grounded emitter output characteristics ( Ι ) Fig.1 Grounded emitter propagation characteristics Ta = 25°C 1 0 0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) 1000 IB = 0mA 5 COLLECTOR CURRENT : IC (A) Fig.5 DC current gain vs. collector curren( ΙΙ ) 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.01 0 Ta = 25°C 10 Ta = 25°C 5 2 1 0.5 0.2 IC/IB = 50 0.1 0.05 20 10 0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current 2SD1760 / 2SD1864 2 1 0.5 Ta = -25°C 100°C VBE (sat) 25°C 0.2 0.1 Ta = 100°C -25°C 0.05 0.02 25°C VCE (sat) 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 50 20 10 5 2 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SD1760) 100 10 1 0.1 1 10 100 1 10Sec 100Sec1000Sec TIME : T (ms) Fig.13 Transient thermal resistance (2SD1864) 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector-base voltage Fig.8 Gain bandwidth product vs. emitter current TRANSIENT THERMAL RESISTANCE : Rth (°C/W) 0.02 Ta = 25°C Single pulse 0.01 * 0.1 0.2 0.5 1 20 5 VCE=5v IC=0.2A 100 10 1 0.1 1 10 100 1Sec 10Sec 100Sec TIME : T (ms) Fig.11 Transient thermal resistance (2SD1760) 2 c Se 0m Sec m 00 0.05 5001000 50 =1 0.1 50 100 200 100 =1 * ms DC 0.2 10 20 200 1 DC 00 s* 0m =1 0.5 5 Ta = 25°C f = 1MHz IE = 0A 500 Pw =1 PW 1 2 1000 Pw 2 1 EMITTER CURRENT : −IE (mA) COLLECTOR CURRENT : IC (A) PW COLLECTOR CURRENT : IC (A) 100 1 Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current TRANSIENT THERMAL RESISTANCE : Rt h (°C/W) 200 10 5 Ta = 25°C VCE = 5V 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 lC/lB = 10 5 COLLECTOR CURRENT : IC (A) 10 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (V) Transistors 0.5 0.2 0.1 0.05 Ta=25°C Single nonrepetitive 0.02 pulse 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.12 Safe operating area (2SD1864)