MSS50,048-C15 - Aeroflex Microelectronic Solutions

MSS50,000 Series
High Barrier Silicon Schottky Diodes
Description
Features
The Aeroflex / Metelics MSS50,000 Series of Schottky diodes
are fabricated on N-Type epitaxial substrates using proprietary
processes that yield the highest FCOs in the industry. Optimum
mixer performance is obtained with LO power of +2 dBm to +8
dBm per diode.
•
•
•
VF , R D and CJ matching options
Chip, beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
Rated VBR
Forward Current
50 mA
Operation Temperature
-65 ºC to +150 ºC
Storage Temperature
-65 ºC to +150 ºC
Power Dissipation
100 mW per junction at TA = 25 ºC, derate
linearly to zero at TA = +150 ºC
Soldering Temperature (Packaged)
+ 260 ºC for 5 sec.
Beam Lead Pull Strength
4 grams minimum
Chip
Electrical Specifications, TA = 25 ºC
Model
Configuration
MSS50,048-C15
Single Junction
MSS50,062-C16
Single Junction
Test
Conditions
Revision Date: 05/20/05
VF
VBR
CJ
RS
RD
FCO
TYP
MIN
TYP / MAX
TYP
MAX
TYP
V
V
pF
0.5
4
0.12 / 0.15
7
15
190
C15
2
12
160
C16
0.5
5
0.50 / 0.55
IF = 1
IR =
VR = 0 V
mA
10 μA
F = 1 MHz
Outline
GHz
I F = 5 mA
MSS50,000 Series
High Barrier Silicon Schottky Diodes
Beam Lead
Electrical Specifications, TA = 25 ºC
Model
Configuration
VF
VBR
CJ
RS
RD
FCO
TYP
MIN
TYP / MAX
TYP
MAX
TYP
V
V
pF
Outline
GHz
MSS50,146-B10B
Single Junction
0.52
5
0.07 / 0.12
9
18
253
B10B
MSS50,244-B20
Series Tee
0.52
4
0.15 / 0.20
7
16
183
B20
MSS50,448-B40
Ring Quad
0.52
10
0.20 / 0.25
6
14
133
B40
IF =
1 mA
IR =
10 μA
VR = 0 V
F = 1 MHz
Test
Conditions
I F = 5 mA
Packaged
Electrical Specifications, TA = 25 ºC
Model
Configuration
VF
VBR
CT
RS
RD
FCO
TYP
MIN
TYP / MAX
TYP
MAX
TYP
V
V
pF
Outline
GHz
MSS50,048-P55
Single Junction
0.50
4
0.24 / 0.30
12
10
190
P55
MSS50,048-P86
Single Junction
0.50
4
0.27 / 0.33
12
10
190
P86
MSS50,146-E25
Single Junction
0.52
5
0.20 / 0.26
15
12
253
E25
MSS50,146-H20
Single Junction
0.52
5
0.28 / 0.34
15
12
253
H20
MSS50,244-E30
Series Tee
0.52
5
0.30 / 0.36
7
16
183
E30
MSS50,244-H30
Series Tee
0.52
5
0.36 / 0.42
7
16
183
H30
MSS50,448-E45
Ring Quad
0.52
5
0.30 / 0.36
10
10
133
E45
MSS50,448-H40
Ring Quad
0.52
5
0.36 / 0.42
10
10
133
H40
IF =
1 mA
IR =
10 μA
VR = 0 V
F = 1 MHz
Test
Conditions
2
Revision Date: 05/20/05
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
I F = 5 mA
MSS50,000 Series
High Barrier Silicon Schottky Diodes
Typical Performance, TA = 25 ºC
Figure 1.
Figure 2.
Forward Voltage vs. Current
Reverse
se Current vs.
vss. Volta
Voltage
M!
IR
IF
M!
Figure 3.
Figure 4.
NF & ZIFF vs. LO Power
Smith Chart - 50
.&
:)&
Reference
MSS-50,048-P86
0
ZIFF ( )
NF (dB)
'(Z
'(Z
d
'(Z
'(Z
L.O. Power (dBm)
)2%#4M!D"M
)2%#4M!D"M
)2%#4M!D"M
Outline Drawings
C15
C15
C16C15
17 [.432]
13 [.330]
Top contact is cathode.
Top Contact
1.1 [0.028]
0.9 [0.023]
17 [.432]
13 [.330]
Top contact is cathode.
17 [.432]
13 [.330]
Top Contact
1.1 [0.028]
0.9 [0.023]
17 [.432]
13 [.330]
6 [0.152]
4 [0.102]
Back Contact
6 [0.152]
4 [0.102]
Back Contact
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
3
Revision Date: 05/20/05
MSS50,000 Series
High Barrier Silicon Schottky Diodes
Outline Drawings
B10B
B10B
10 [0.254]
6 [0.152]
B40
0.55 [0.014]
0.25 [0.006]
21.5 [0.546]
17.5 [0.445]
SQ
Cut lead is anode
3.5 [0.089]
1.2 [0.030]
33 [0.838]
28 [0.711]
12 [0.305]
9 [0.229]
0.55 [0.014]
0.25 [0.006]
3.5 [0.089]
1.2 [0.030]
6 [0.152]
4 [0.102]
4 Pls
Back
Ba c k
12 [0.305]
9 [0.229]
Back View
E25
E25 (non-hermetic)
Le ss tha n 0.5 [0.013]
Lp = 0.1nH
Cp = 0.015pF
Ba c k Vie w
E45 (non-hermetic)
E45
55 [1.397] SQ.
45 [1.143]
Cp=0.07pF
Lp=0.4nH
12 [0.305]
8 [0.203]
4 Pls
8.75 [0.222]
4.75 [0.121]
4 Pls
Less Than 0.5 [0.013]
Cp=0.07pF
Lp=0.4nH
55 [1.397] SQ.
45 [1.143]
Cut Lead is Cathode
18 [0.457] 4 Pls
12 [0.305]
18 [0.457]
12 [0.305]
Epoxy
5 [0.127] 2Pls
3 [0.076]
Epoxy
50 [1.270] Max.
5 [0.127] 4 Pls
3 [0.076]
50 [1.270] Max.
14 [0.356]
8 [0.203]
Ceramic
14 [0.356]
8 [0.203]
80 [2.032] Min.
P86
P86
P55 (hermetic)
(hermetic)
15 [0.381]
10 [0.254]
64 [1.626]
60 [1.524]
210 [5.334]
190 [4.826]
Ceramic
Body
H20
64 [1.626] Dia.
60 [1.524]
p=0.15pF
=1nH
55 [1.397]
51 [1.295]
Dia.
55 [1.397]
45 [1.143]
80 [2.032] Min.
Ceramic
H40
H40
Cp=0.18pF
Lp=0.5nH
102 [2.591] Dia
81 [2.057]
(hermetic)
(hermetic)
23 [0.584]
17 [0.432]
0
5nH
.18pF
102 [2.591] Dia
81 [2.057]
23 [0.584]
17 [0.432]
Cut lead is Cathode
Ceramic
Body
82 [2.083]
70 [1.778]
104 [2.642]
92 [2.337]
Square
130 [3.302]
Min. 2 Pls
130 [3.302]
Min. 4 Pls
104 [2.642]
92 [2.337]
Square
8 [0.203]
4 [0.102]
6 [0.152]
3 [0.076]
8 [0.203]
4 [0.102]
6 [0.152]
3 [0.076]
Heatsink is anode
84 [2.134] Dia.
78 [1.981]
Heatsink is anode
35 [0.889]
25 [0.635]
35 [0.889]
25 [0.635]
Aeroflex / Metelics
Aeroflex Microelectronic Solutions
975 Stewart Drive, Sunnyvale, CA 94085
TEL: 408-737-8181
Fax: 408-733-7645
www.aeroflex-metelics.com
[email protected]
Aeroflex / Metelics, Inc. reserves the right to make changes to any products
and services herein at any time without notice. Consult Aeroflex or an
authorized sales representative to verify that the information in this data
sheet is current before using this product. Aeroflex does not assume any
responsibility or liability arising out of the application or use of any product
or service described herein, except as expressly agreed to in writing by
Aeroflex; nor does the purchase, lease, or use of a product or service from
Aeroflex convey a license under any patent rights, copyrights, trademark
rights, or any other of the intellectual rights of Aeroflex or of third parties.
Copyright 2003 Aeroflex / Metelics. All rights reserved.
Revision Date: 05/20/05
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