STMICROELECTRONICS MSS40-800

MSS40 / 50 Series
®
BACK TO BACK SCR MODULE
MAIN FEATURES:
Symbol
Value
Unit
IT(RMS)
55 and 70
A
VDRM/VRRM
800 and 1200
V
IGT
50
mA
A2
G1
G2
DESCRIPTION
Packaged in ISOTOP modules, the MSS40 /
MSS50 Series is based on two back-to-back SCR
configurations, providing high noise immunity.
They are suitable for high power applications such
as solid state relays, heating control systems,
welding equipment, motor control circuits...
The compactness of the ISOTOP package allows
high power density and optimized power bus
connections. Thanks to their internal ceramic pad,
they provide high voltage insulation (2500V RMS),
complying with UL standards (File ref: E81734).
A1
ISOTOP®
PIN CONNECTIONS
G1
4
1: Thyristor 2 Anode (A2)
3
2: Thyristor 2 Gate (G2)
A1
3: Thyristor 1 Anode (A1)
4: Thyristor 1 Gate (G1)
1
A2
2
G2
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
MSS40
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
RMS on-state current
Non repetitive surge peak on-state
current
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
Tc = 80 °C
Tc = 85 °C
tp = 16.7 ms
Tj = 25°C
tp = 20 ms
tp = 10 ms
Tj = 25°C
F = 120 Hz
Tj = 125°C
tp = 20 µs
Unit
MSS50
55
420
400
70
630
600
800
1800
50
A
A
A2S
A/µs
Tj = 125°C
4
A
Tj = 125°C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
VRGM
Maximum peak reverse gate voltage
5
V
ISOTOP is a registred trademark of STMicroelectronics
September 2000 - Ed: 3
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MSS40 / 50 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Value
Test Conditions
MSS40
IGT
VD = 12 V
MIN.
5
MAX.
50
MAX.
1.3
V
MIN.
0.2
V
MAX.
80
mA
MAX.
120
mA
Tj = 125°C
MIN.
1000
V/µs
Tj = 25°C
MAX.
RL = 33 Ω
VGT
VGD
VD = VDRM
RL = 3.3 kΩ
IH
IT = 500 mA
Gate open
IL
IG = 1.2 IGT
dV/dt
VTM
VD = 67 % VDRM
Tj = 125°C
Gate open
ITM = 80 A
tp = 380 µs
ITM = 100 A
tp = 380 µs
Vt0
Threshold voltage
Tj = 125°C
MAX.
Rd
Dynamic resistance
Tj = 125°C
MAX.
Tj = 25°C
MAX.
IDRM
IRRM
VDRM / VRRM RATED
Unit
MSS50
mA
1.7
-
-
1.7
V
0.85
11
Tj = 125°C
V
7
mΩ
20
µA
10
mA
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
Junction to case (AC)
Value
Unit
MSS40
0.6
°C/W
MSS50
0.45
PRODUCT SELECTOR
Voltage (xxx)
Part Number
Sensitivity
Package
X
50 mA
ISOTOPTM
X
50 mA
ISOTOPTM
800 V
1200 V
MSS40-xxx
X
MSS50-xxx
X
ORDERING INFORMATION
MSS
40 -
SCR
MODULE
SERIES
VOLTAGE:
800: 800V
1200: 1200V
CURRENT:
40: 55A
50: 70A
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800
MSS40 / 50 Series
OTHER INFORMATION
Part Number
Marking
Weight
Base Quantity
Packing mode
MSS40-xxx
MSS40-xxx
27.0 g
10
Tube
MSS50-xxx
MSS50-xxx
27.0 g
10
Tube
Note: xxx = voltage
Fig. 1: Maximum power dissipation versus RMS
on-state current.
Fig. 2: RMS on-state current versus case
temperature.
P(W)
100
90
80
70
60
50
40
30
20
10
0
IT(RMS)(A)
80
α = 180°
MSS50
α =180°
MSS50
70
60
MSS40
MSS40
50
40
30
180°
20
α
α
IT(RMS)(A)
0
10
20
30
40
50
60
10
70
80
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
0
Tcase(°C)
0
25
50
75
100
125
150
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
K = [Zth(j-c)/Rth(j-c)]
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
1.0
2.5
2.0
IGT
0.5
1.5
IH & IL
1.0
0.2
0.5
Tj(°C)
tp(s)
0.1
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
-40
-20
0
20
40
60
80
100 120 140 160
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MSS40 / 50 Series
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6:Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10 ms, and
corresponding value of I²t.
ITSM(A)
ITSM(A), I2t(A2S)
700
5000
MSS50
600
t = 20ms
Non repetitiv e
Tj initial = 25 °C
500
One cycle
MSS40
400
1000
MSS50
Repetitive
Tcase = 85 °C
300
200
MSS40
Repetitive
Tcase = 80 °C
100
0
1
Number of cycles
10
100
0.01
100
Fig. 7-1: On-state characteristics (maximum
values) (MSS40).
1.00
10.00
Fig. 7-2: On state characteristics (maximum
values) (MSS50).
ITM(A)
ITM(A)
500
0.10
1000
Tj max.:
Vto = 0.85V
Rd = 11m Ω
Tj = Tjmax.
Tj max.:
Vto = 0.85V
Rd = 7mΩ
Tj = Tjmax.
100
100
Tj = 25°C
Tj = 25°C
VTM(V)
10
0.0
4/5
1.0
2.0
3.0
VTM(V)
4.0
5.0
6.0
10
0.0
1.0
2.0
3.0
4.0
5.0
6.0
MSS40 / 50 Series
PACKAGE MECHANICAL DATA
ISOTOP™
DIMENSIONS
REF.
Millimeters
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
P1
S
11.80
12.20
8.90
9.10
7.8
8.20
0.75
0.85
1.95
2.05
37.80
38.20
31.50
31.70
25.15
25.50
23.85
24.15
24.80 typ.
14.90
15.10
12.60
12.80
3.50
4.30
4.10
4.30
4.60
5.00
4.00
4.30
4.00
4.40
30.10
30.30
Min.
■
■
Max.
Inches
Min.
0.465
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
0.976
0.587
0.496
0.138
0.161
0.181
0.157
0.157
1.185
Max.
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
typ.
0.594
0.504
0.169
0.169
0.197
0.69
0.173
1.193
Recommended torque value: 1.3 Nm (max. 1.5 Nm) for the 6 x M4 screws (2 x M4 screws recommended for mounting the package on the heatsink and the 4 provided screws.
The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min. and 2.2 mm max.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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