MSS40,000 Series Medium Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. • • • VF , RD and CJ matching options Chip, beam lead or packaged devices Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Rating Reverse Voltage Rated VBR Forward Current 50 mA Operation Temperature -65 ºC to +150 ºC Storage Temperature -65 ºC to +150 ºC Power Dissipation 100 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC Soldering Temperature (Packaged) + 260 ºC for 5 sec. Beam Lead Pull Strength 4 grams minimum Chip Electrical Specifications, TA = 25 ºC Model Configuration VF VBR CJ RS RD FCO TYP MIN TYP / MAX TYP MAX TYP V V pF 3 0.09 / 0.12 7 15 253 C15 7 15 190 C15 MSS40,045-C15 Single Junction 0.42 MSS40,048-C15 Single Junction 0.40 3 0.12 / 0.15 IF = 1 IR = VR = 0 V mA 10 μA F = 1 MHz Test Conditions Revision Date: 7/7/2014 Outline GHz IF = 5 mA MSS40,000 Series Medium Barrier Silicon Schottky Diodes Beam Lead Electrical Specifications, TA = 25 ºC Model Configuration VF VBR CJ RS RD FCO TYP MIN TYP / MAX TYP MAX TYP V V pF 0.42 3 0.06 / 0.10 10 MSS40,141-B10B Single Junction MSS40,148-B10B Single Junction 0.40 3 0.12 / 0.15 MSS40,155-B10B Single Junction 0.38 3 0.25 / 0.30 MSS40,244-B20 Series Tee 0.44 3 MSS40,248-B20 Series Tee 0.44 3 MSS40,255-B20 Series Tee 0.38 MSS40,448-B41 Ring Quad 0.40 MSS40,455-B40 Ring Quad 0.38 Test Conditions IF = 1 mA Outline GHz 22 265 B10B 7 17 190 B10B 5 13 127 B10B 0.08 / 0.12 19 22 105 B20 0.12 / 0.15 10 17 133 B20 3 0.25 / 0.30 5 15 127 B20 3 0.12 / 0.15 7 17 190 B41 5 17 127 B40 3 0.25 / 0.30 IR = VR = 0 V 10 μA F = 1 MHz IF = 5 mA Packaged Electrical Specifications, TA = 25 ºC Model Configuration VF VBR CT RS RD FCO TYP MIN TYP / MAX TYP MAX TYP V V pF Outline GHz MSS40,045-P55 Single Junction 0.42 3 0.21 / 0.27 7 15 253 P55 MSS40,045-P86 Single Junction 0.42 3 0.24 / 0.30 7 15 253 P86 MSS40,048-P55 Single Junction 0.40 3 0.24 / 0.30 7 15 190 P55 MSS40,048-P86 Single Junction 0.40 3 0.27 / 0.33 7 15 190 P86 MSS40,141-E25 Single Junction 0.42 3 0.16 / 0.22 10 18 265 E25 MSS40,141-H20 Single Junction 0.42 3 0.24 / 0.30 10 18 265 H20 MSS40,148-E25 Single Junction 0.40 3 0.22 / 0.28 7 15 190 E25 MSS40,148-H20 Single Junction 0.40 3 0.30 / 0.36 7 15 190 H20 MSS40,155-E25 Single Junction 0.38 3 0.35 / 0.41 5 14 127 E25 MSS40,155-H20 Single Junction 0.38 3 0.43 / 0.50 5 14 127 H20 MSS40,244-E35 Series Tee 0.44 3 0.18 / 0.24 19 28 105 E35 MSS40,248-E35 Series Tee 0.44 3 0.22 / 0.28 10 18 133 E35 MSS40,255-E35 Series Tee 0.38 3 0.35 / 0.41 5 14 127 E35 MSS40,448-E45 Ring Quad 0.40 3 0.24 / 0.30 7 15 190 E45 MSS40,455-E45 Ring Quad 0.38 3 0.32 / 0.38 5 14 127 E45 MSS40,455-H40 Ring Quad 0.38 3 0.42 / 0.48 5 14 127 H40 Test Conditions 2 Revision Date: 7/7/2014 IF = 1 mA IR = VR = 0 V 10 μA F = 1 MHz Aeroflex / Metelics, Inc. www.aeroflex-metelics.com IF = 5 mA MSS40,000 Series Medium Barrier Silicon Schottky Diodes Typical Performance, TA = 25 ºC Figure 1. Figure 2. Forward Voltage vs. Current Reverse Current vs. Voltage 100 mA IR IF 10 1 100 µA 10 0 0.5 0.1 1.0 1 10 Vf (V) Figure 3. Figure 4. NF & ZIF vs. LO Power 10 NF Smith Chart - 50 500 ZIF Reference 300 7 200 6 100 3.0 0.2 ZIF ( ) 8 2.0 40,048-P86 400 5.0 10.0 11 GHz 0 0.2 0.5 1.0 2.0 3.0 5.0 10.0 -3 0 5.0 8 GHz 0 +6 5 +3 ∞ 2 GHz 0.2 -6 1000 1.0 0.5 9 NF (dB) 100 VR (V) 4 GHz 0.5 L.O. Power (dBm) 3.0 2.0 1.0 IRECT = 1 mA, + 11/2 dBm IRECT = 2 mA, + 3 dBm IRECT = 4 mA, + 6 dBm Outline Drawings B10B C15 C15 B10B 17 [.432] 13 [.330] Top contact is cathode. B20 10 [0.254] 6 [0.152] 12 [0.305] 9 [0.229] 12 [0.305] 9 [0.229] Back Contact 0.55 [0.014] 0.25 [0.006] 10 [0.254] 2 Pls 6 [0.152] 3.5 [0.089] 1.2 [0.030] 3.5 [0.089] 1.2 [0.030] 33 [0.838] 28 [0.711] 6 [0.152] 4 [0.102] C a tho d e B20 14.5 [0.368] 10.5 [0.267] Top ContCut actlead is anode 1.1 [0.028] 0.9 [0.023] 17 [.432] 13 [.330] 0.55 [0.014] 0.25 [0.006] 23 [0.584] 19 [0.483] CL Back Ba c k 7 [0.178] 4 [0.102] 3 Pls 12 [0.305] 8 [0.203] Le ss tha n 0.5 [0.013] Less Than 0.5 [0.013] Ba c k Vie w Back View Lp = 0.1nH Cp = 0.015pF Aeroflex / Metelics, Inc. www.aeroflex-metelics.com 3 Revision Date: 7/7/2014 MSS40,000 Series Medium Barrier Silicon Schottky Diodes Outline Drawings B40 B41 B40 21.5 [0.546] 17.5 [0.445] SQ 13.5 [0.343] B41 10.5 [0.267] SQ 0.55 [0.014] 0.25 [0.006] 0.55 [0.014] 0.25 [0.006] 4.75 [0.121] 3.5 [0.089] 3.25 [0.083] 3.5 [0.089] 1.2 [0.030] 6 [0.152] 4 [0.102] 4 Pls 1.2 [0.030] 4 Pls CL Ba c k Ba c k 12 [0.305] 8 [0.203] 4 Pls 8.75 [0.222] 4.75 [0.121] 4 Pls 8.5 [0.216] 5.5 [0.140] Le ss tha n 0.5 [0.013] Ba c k Vie w Ba c k Vie w E35 (non-hermetic) E35 E45 Cp=0.07pF Lp=0.4nH 55 [1.397] SQ. 45 [1.143] 55 [1.397] SQ. 45 [1.143] 18 [0.457] 4 Pls 12 [0.305] 18 [0.457] 12 [0.305] Epoxy Epoxy 14 [0.356] 8 [0.203] 14 [0.356] 8 [0.203] Ceramic H20 (hermetic) H20 5 [0.127] 4 Pls 3 [0.076] 23 [0.584] 17 [0.432] 80 [2.032] Min. Ceramic H40 (hermetic) P86 (hermetic) P86 H40 102 [2.591] Dia 81 [2.057] Cut lead is Cathode 14 [0.356] 8 [0.203] 80 [2.032] Min. H30 Cp=0.18pF Lp=0.5nH Heatsink is anode 50 [1.270] Max. H30 (hermetic) 102 [2.591] Dia 81 [2.057] Lp=0.5nH Cp=0.18pF Epoxy 5 [0.127] 3 Pls 3 [0.076] 50 [1.270] Max. 80 [2.032] Min. 55 [1.397] 45 [1.143] Ceramic Body 5 [0.127] 2Pls 3 [0.076] 50 [1.270] Max. Ceramic 55 [1.397] 51 [1.295] Dia. P55 Cp=0.13pF Lp=0.35nH 18 [0.457] 3 Pls 12 [0.305] Cut Lead is Cathode P55 (hermetic) E45 (non-hermetic) 55 [1.397] SQ. 45 [1.143] Cp=0.07pF Lp=0.4nH E25 Le ss tha n 0.5 [0.013] CL E25 (non-hermetic) Cp=0.07pF Lp=0.4nH 4 Pls Cp=0.18pF Lp=0.5nH 64 [1.626] Dia. 60 [1.524] Cp=0.15pF Lp=1nH 102 [2.591] Dia 81 [2.057] 23 [0.584] 17 [0.432] 23 [0.584] 17 [0.432] Cut lead is Cathode 15 [0.381] 10 [0.254] 64 [1.626] 60 [1.524] 104 [2.642] 92 [2.337] Square 130 [3.302] Min. 2 Pls 8 [0.203] 4 [0.102] 6 [0.152] 3 [0.076] 104 [2.642] 92 [2.337] Square 8 [0.203] 4 [0.102] 35 [0.889] 25 [0.635] Aeroflex / Metelics Inc. Aeroflex Microelectronic Solutions 975 Stewart Drive Sunnyvale, CA 94085 TEL: 408-737-8181 130 [3.302] Min. 3 Pls 6 [0.152] 3 [0.076] 35 [0.889] 25 [0.635] 130 [3.302] Min. 4 Pls 104 [2.642] 92 [2.337] Square 8 [0.203] 4 [0.102] 210 [5.334] 190 [4.826] Ceramic Body 82 [2.083] 70 [1.778] 6 [0.152] 3 [0.076] 35 [0.889] 25 [0.635] 84 [2.134] Dia. 78 [1.981] Heatsink is anode ISO 9001:2008 certified companies 54 Grenier Field Road Londonderry, NH 03053 TEL: 603-641-3800 Sales 888-641-SEMI (7364) [email protected] www.aeroflex.com/Microwave www.aeroflex.com/Metelics Aeroflex / Metelics, Inc. reserves the right to make changes to any products and services herein at any time without notice. Consult Aeroflex or an authorized sales representative to verify that the information in this data sheet is current before using this product. Aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by Aeroflex; nor does the purchase, lease, or use of a product or service from Aeroflex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of Aeroflex or of third parties. Copyright 2010 Aeroflex / Metelics. All rights reserved. Revision Date: 7/7/2014 Our passion for performance is defined by three attributes represented by these three icons: solution-minded, performance-driven and customer-focused. A17026 (-)