HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872 2SC5849 Outline EMFPAK-6 Pin Arrangement 6 5 B1 6 4 E2 5 Q2 Q1 1 2 3 C1 1 1. Collector Q1 2. Emitter Q1 3. Collector Q2 Note: Mark is “B”. Rev.1.00, Apr.14.2003, page 1 of 21 B2 4 E1 2 C2 3 4. Base Q2 5. Emitter Q2 6. Base Q1 HTT1132E Absolute Maximum Ratings (Ta = 25 °C) Ratings Item Symbol Q1 Q2 Unit Collector to base voltage VCBO 16 15 V Collector to emitter voltage VCEO 6 6 V Emitter to base voltage VEBO 0.8 1.5 V Collector current IC 50 80 mA Collector power dissipation PC Total 200* Total 200* mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C *Value on PCB. (FR–4 (13 x 13 x 0.635 mm)). Collector Power Dissipation Pc* (mW) Collector Power Dissipation Curve 250 200 *Value on PCB. (FR–4 (13 x13 x 0.635 mm)) 2 devices total 150 100 50 0 50 100 Ambient temperature Rev.1.00, Apr.14.2003, page 2 of 21 150 Ta (˚C) 200 HTT1132E Q1 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Collector to base breakdown voltage V(BR)CBO 16 V IC = 10 µA, IE = 0 Collector cutoff current ICBO 0.1 µA VCB = 15 V, IE = 0 Collector cutoff current ICEO 0.1 µA VCE = 6V, RBE = infinite Emitter cutoff current IEBO 0.1 µA VEB = 0.8 V, IC = 0 DC current transfer ratio hFE 90 120 140 VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre 0.25 0.35 pF VCB = 1 V, f = 1 MHz Emitter ground Collector output capacitance Cob 0.38 pF VCB = 1 V, f = 1 MHz Gain bandwidth product fT 8 10 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz Gain bandwidth product fT 12 GHz VCE = 3V, IC = 15mA, f = 1 GHz Forward transfer coefficient |S21|2 13 16 dB Noise figure NF 1.0 1.6 dB VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 Ω Q2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Collector to base breakdown voltage V(BR)CBO 15 V IC = 10 µA, IE = 0 Collector cutoff current ICBO 0.1 µA VCB = 15 V, IE = 0 Collector cutoff current ICEO 0.1 µA VCE = 6V, RBE = infinite Emitter cutoff current IEBO 0.1 µA VEB = 1.5V, IC = 0 DC current transfer ratio hFE 90 120 140 VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre 0.50 0.65 pF VCB = 1 V, f = 1 MHz Emitter ground Collector output capacitance Cob 0.68 pF VCB = 1 V, f = 1 MHz Gain bandwidth product fT 2 4 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz Gain bandwidth product fT 11 GHz VCE =3V, IC = 50mA, f = 1 GHz Forward transfer coefficient |S21|2 7 11 dB Noise figure NF 1.7 2.3 dB VCE = 1 V, IC = 5 mA, f = 900 MHz ΓS = ΓL = 50 Ω Noise figure NF 1.1 dB Rev.1.00, Apr.14.2003, page 3 of 21 VCE = 1 V, IC = 5 mA, f = 900 MHz HTT1132E Q1 Main Characteristics Typical Output Characteristics 160 µA Typical Forward Transfer Characteristics 50 140 µA 16 VCE = 1 V Collector Current IC (mA) Collector Current IC (mA) 20 120 µA 100 µA 12 80 µA 8 60 µA 40 µA 4 IB = 20 µA 0 1 2 3 4 5 Collector to Emitter Voltage 100 10 IC (mA) Rev.1.00, Apr.14.2003, page 4 of 21 10 100 0.2 0.4 0.6 Base to Emitter Voltage Reverse Transfer Capacitance Cre (pF) DC Current Transfer Ratio hFE VCE = 1 V Collector Current 20 VCE (V) 200 1.0 30 0 6 DC Current Transfer Ratio vs. Collector Current 0 0.1 40 0.8 1.0 VBE (V) Reverse Transfer Capacitance vs. Collector to Base Voltage 0.4 Emitter ground f = 1 MHz 0.3 0.2 0.1 0 0.5 1.0 1.5 Collector to Base Voltage VCB (V) 2.0 HTT1132E Gain Bandwidth Product vs. Collector Current Noise Figure vs. Collector Current 8 15 f = 900 MHz 10 VCE = 1 V 5 NF (dB) VCE = 3 V 6 Noise Figure fT (GHz) Gain Bandwidth Product VCE = 1 V 7 f = 1 GHz 4 VCE = 2 V 5 3 2 VCE = 3 V 1 0 1 0 2 5 10 20 50 1 100 2 5 S21 Parameter vs. Collector Current 20 S21 Parameter |S21|2 (dB) f = 900 MHz VCE = 3 V 16 12 8 VCE = 1 V 4 2 5 10 20 Collector Current IC (mA) Rev.1.00, Apr.14.2003, page 5 of 21 20 Collector Current IC (mA) Collector Current IC (mA) 0 1 10 50 100 50 100 HTT1132E Q2 Main Characteristics Typical Forward Transfer Characteristics 25 Typical Output Characteristics 160 µA 180 µA Collector Current IC (mA) 120 µA 100 µA 12 80 µA 8 60 µA 40 µA 4 IB = 20 µA 0 1 2 3 4 5 Collector to Emitter Voltage 200 DC Current Transfer Ratio hFE VCE = 1 V 140 µA 16 15 10 5 0 6 Collector Current 10 IC (mA) Rev.1.00, Apr.14.2003, page 6 of 21 0.4 0.6 0.8 1.0 VBE (V) Reverse Transfer Capacitance vs. Collector to Base Voltage 100 1.0 0.2 Base to Emitter Voltage DC Current Transfer Ratio vs. Collector Current VCE = 1 V 0 0.1 20 VCE (V) 100 Reverse Transfer Capacitance Cre (pF) Collector Current IC (mA) 20 1.0 Emitter ground f = 1 MHz 0.8 0.6 0.4 0.2 0 0.5 1.0 1.5 2.0 Collector to Base Voltage VCB (V) HTT1132E Gain Bandwidth Product vs. Collector Current Noise Figure vs. Collector Current 5 15 f = 1 GHz 10 VCE = 1 V 5 4 NF (dB) VCE = 3 V Noise Figure Gain Bandwidth Product fT (GHz) VCE = 1 V f = 900 MHz 3 2 1 0 1 0 2 5 10 20 50 Collector Current IC (mA) 100 1 2 5 10 20 50 Collector Current IC (mA) S21 Parameter vs. Collector Current 20 S21 Parameter |S21|2 (dB) f = 900 MHz 16 VCE = 2 V 12 VCE = 1 V 8 4 0 1 Rev.1.00, Apr.14.2003, page 7 of 21 2 5 10 20 50 Collector Current IC (mA) 100 100 HTT1132E Q1 S Parameter (VCE = 1 V, IC = 3 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.916 -12.4 9.04 170.0 0.0329 89.7 0.979 -6.6 200 0.884 -23.8 8.71 160.2 0.0379 77.6 0.953 -13.6 300 0.845 -35.4 8.31 151.3 0.0503 66.2 0.906 -19.7 400 0.800 -46.1 7.92 143.6 0.0588 63.6 0.860 -25.4 500 0.749 -56.8 7.48 136.3 0.0698 61.7 0.809 -29.9 600 0.704 -66.7 7.06 129.8 0.0801 56.1 0.760 -33.7 700 0.658 -76.1 6.61 123.8 0.0892 52.6 0.712 -37.1 800 0.622 -85.0 6.21 118.4 0.0934 51.2 0.670 -39.8 900 0.580 -93.6 5.83 113.4 0.0987 48.4 0.634 -41.8 1000 0.553 -100.9 5.47 109.0 0.1025 47.2 0.598 -43.8 1100 0.523 -108.4 5.13 104.9 0.1076 45.3 0.570 -45.5 1200 0.500 -115.4 4.83 101.1 0.1079 44.9 0.543 -47.0 1300 0.479 -122.4 4.55 97.6 0.1139 43.1 0.520 -48.3 1400 0.464 -128.5 4.30 94.3 0.1156 43.9 0.497 -49.6 1500 0.450 -134.8 4.07 91.2 0.1168 43.1 0.479 -50.6 1600 0.437 -140.5 3.87 88.4 0.1203 42.9 0.462 -51.9 1700 0.429 -146.3 3.68 85.7 0.1232 43.0 0.450 -53.0 1800 0.422 -151.3 3.50 83.1 0.1244 42.5 0.436 -54.0 1900 0.414 -156.7 3.34 80.5 0.1255 43.1 0.422 -54.9 2000 0.411 -161.8 3.20 78.1 0.1299 43.3 0.412 -55.9 2100 0.407 -166.6 3.06 75.7 0.1326 43.1 0.403 -57.1 2200 0.405 -171.0 2.94 73.5 0.1357 43.1 0.395 -58.2 2300 0.405 -175.5 2.83 71.3 0.1373 43.1 0.386 -59.4 2400 0.406 179.9 2.72 69.2 0.1406 43.6 0.380 -60.6 2500 0.408 176.1 2.63 67.2 0.1440 43.5 0.372 -61.7 2600 0.409 172.1 2.54 65.2 0.1468 44.2 0.367 -62.6 2700 0.411 168.5 2.45 63.2 0.1492 44.0 0.359 -64.3 2800 0.415 164.9 2.37 61.3 0.1519 45.0 0.359 -65.4 2900 0.419 161.2 2.30 59.4 0.1550 44.5 0.352 -66.8 3000 0.422 158.0 2.23 57.5 0.1581 44.8 0.351 -68.0 Rev.1.00, Apr.14.2003, page 8 of 21 HTT1132E Q1 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.852 -17.6 14.12 165.7 0.0299 74.4 0.965 -9.2 200 0.809 -34.3 13.17 153.2 0.0369 67.3 0.906 -19.5 300 0.739 -49.1 12.12 142.5 0.0472 60.9 0.832 -26.3 400 0.676 -63.5 11.10 133.5 0.0553 63.3 0.756 -32.1 500 0.616 -76.4 10.09 125.5 0.0598 55.4 0.692 -36.5 600 0.566 -88.0 9.18 118.8 0.0674 52.9 0.629 -39.9 700 0.525 -98.1 8.32 113.2 0.0737 52.4 0.580 -42.0 800 0.489 -107.5 7.60 108.3 0.0762 51.1 0.539 -44.1 900 0.461 -116.0 6.97 103.9 0.0793 51.0 0.507 -45.5 1000 0.442 -123.6 6.42 100.1 0.0847 50.1 0.475 -46.5 1100 0.423 -131.2 5.93 96.6 0.0869 50.8 0.453 -47.4 1200 0.409 -138.0 5.51 93.4 0.0917 50.9 0.430 -48.5 1300 0.398 -144.4 5.15 90.5 0.0954 50.5 0.412 -49.2 1400 0.389 -150.2 4.82 87.7 0.0966 49.5 0.396 -50.0 1500 0.386 -155.6 4.53 85.1 0.1027 50.7 0.382 -50.7 1600 0.381 -160.6 4.28 82.8 0.1048 50.7 0.373 -51.6 1700 0.381 -165.9 4.05 80.4 0.1095 50.4 0.362 -52.3 1800 0.376 -170.3 3.84 78.2 0.1130 51.3 0.353 -53.6 1900 0.378 -175.3 3.66 76.0 0.1161 51.7 0.341 -54.5 2000 0.376 -179.5 3.49 73.9 0.1217 51.5 0.338 -55.4 2100 0.378 176.2 3.33 71.9 0.1252 51.8 0.329 -56.5 2200 0.380 172.6 3.19 69.9 0.1281 51.9 0.323 -57.5 2300 0.385 168.9 3.06 68.0 0.1335 52.6 0.318 -58.9 2400 0.386 165.6 2.94 66.2 0.1368 52.5 0.314 -60.1 2500 0.392 162.0 2.83 64.3 0.1412 52.2 0.310 -61.5 2600 0.395 159.0 2.73 62.6 0.1440 53.3 0.307 -62.5 2700 0.399 155.5 2.63 60.8 0.1504 52.9 0.299 -64.1 2800 0.402 152.7 2.55 59.1 0.1540 53.3 0.299 -65.6 2900 0.407 150.0 2.46 57.4 0.1586 52.4 0.294 -67.4 3000 0.412 146.9 2.39 55.6 0.1634 52.2 0.293 -68.4 Rev.1.00, Apr.14.2003, page 9 of 21 HTT1132E Q1 S Parameter (VCE = 1 V, IC = 7 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.798 -24.1 18.30 161.7 0.0152 13.2 0.936 -12.7 200 0.726 -44.9 16.53 147.1 0.0357 69.0 0.859 -23.3 300 0.648 -63.1 14.68 135.1 0.0401 59.3 0.760 -31.2 400 0.584 -79.4 12.96 125.6 0.0528 57.8 0.672 -36.3 500 0.528 -93.2 11.40 117.8 0.0531 54.6 0.599 -40.0 600 0.485 -105.3 10.11 111.6 0.0577 54.0 0.544 -42.2 700 0.451 -115.5 8.99 106.6 0.0633 54.1 0.497 -43.7 800 0.430 -124.5 8.09 102.2 0.0680 53.1 0.460 -44.6 900 0.411 -132.5 7.35 98.4 0.0715 53.8 0.432 -45.1 1000 0.398 -140.0 6.71 95.0 0.0761 53.3 0.408 -46.0 1100 0.386 -146.9 6.17 91.9 0.0796 53.7 0.391 -46.4 1200 0.382 -153.3 5.70 89.1 0.0834 55.3 0.373 -47.3 1300 0.378 -159.0 5.31 86.4 0.0859 55.0 0.360 -47.8 1400 0.375 -163.7 4.96 84.0 0.0901 55.8 0.349 -48.5 1500 0.373 -168.7 4.65 81.6 0.0964 56.5 0.337 -48.8 1600 0.372 -173.6 4.38 79.5 0.1015 57.1 0.328 -49.9 1700 0.374 -177.6 4.14 77.4 0.1052 56.6 0.319 -50.7 1800 0.373 178.3 3.92 75.4 0.1095 57.3 0.312 -51.5 1900 0.375 174.2 3.73 73.3 0.1133 56.5 0.304 -52.5 2000 0.377 170.5 3.55 71.4 0.1198 56.7 0.302 -53.3 2100 0.381 167.1 3.39 69.5 0.1232 57.2 0.295 -54.6 2200 0.384 163.7 3.24 67.7 0.1275 57.0 0.291 -55.9 2300 0.388 160.5 3.11 65.9 0.1326 57.4 0.285 -57.2 2400 0.394 157.5 2.98 64.2 0.1375 57.9 0.285 -58.7 2500 0.399 154.4 2.87 62.5 0.1413 57.1 0.280 -60.3 2600 0.400 151.7 2.77 60.8 0.1469 57.6 0.278 -61.2 2700 0.407 149.0 2.67 59.2 0.1510 57.0 0.273 -63.0 2800 0.410 146.7 2.58 57.5 0.1547 57.2 0.271 -64.5 2900 0.416 143.9 2.49 55.9 0.1614 56.7 0.268 -66.4 3000 0.421 141.2 2.42 54.2 0.1669 56.0 0.269 -67.9 Rev.1.00, Apr.14.2003, page 10 of 21 HTT1132E Q1 S Parameter (VCE = 1 V, IC = 10 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.708 -33.6 23.08 155.8 0.0200 74.9 0.905 -16.4 200 0.633 -61.6 19.73 138.8 0.0287 59.0 0.780 -28.2 300 0.550 -83.6 16.56 126.0 0.0324 55.8 0.654 -35.5 400 0.503 -101.2 13.97 116.8 0.0430 59.7 0.570 -39.0 500 0.461 -115.6 11.88 109.8 0.0450 55.2 0.502 -41.1 600 0.434 -127.2 10.31 104.3 0.0531 54.1 0.452 -42.4 700 0.417 -136.3 9.04 100.0 0.0562 54.7 0.418 -42.9 800 0.407 -144.6 8.05 96.2 0.0608 57.9 0.388 -42.7 900 0.399 -151.0 7.25 92.8 0.0630 57.1 0.369 -43.1 1000 0.396 -157.7 6.58 89.9 0.0697 58.6 0.352 -43.2 1100 0.391 -163.3 6.02 87.2 0.0721 61.5 0.338 -43.4 1200 0.392 -168.8 5.55 84.6 0.0788 60.0 0.327 -43.7 1300 0.388 -173.4 5.15 82.3 0.0831 61.8 0.316 -43.9 1400 0.391 -177.5 4.80 80.1 0.0870 62.0 0.308 -44.8 1500 0.392 178.2 4.49 77.9 0.0930 60.6 0.300 -45.4 1600 0.394 174.6 4.23 75.9 0.0972 61.4 0.293 -46.1 1700 0.397 171.2 3.99 73.9 0.1037 60.7 0.289 -46.9 1800 0.400 168.0 3.78 72.1 0.1062 62.0 0.285 -48.2 1900 0.403 164.5 3.59 70.1 0.1114 61.4 0.276 -49.4 2000 0.407 161.4 3.42 68.3 0.1180 61.2 0.275 -50.4 2100 0.411 158.3 3.26 66.5 0.1229 61.8 0.270 -51.5 2200 0.414 155.8 3.12 64.8 0.1270 61.3 0.269 -53.0 2300 0.420 153.0 2.98 63.1 0.1305 61.8 0.265 -54.5 2400 0.424 150.6 2.86 61.4 0.1386 60.7 0.263 -56.3 2500 0.431 148.1 2.76 59.8 0.1417 61.3 0.258 -57.4 2600 0.434 145.7 2.65 58.1 0.1488 60.9 0.257 -59.0 2700 0.439 143.2 2.56 56.6 0.1522 60.0 0.254 -60.9 2800 0.443 140.8 2.48 54.9 0.1562 60.1 0.254 -62.7 2900 0.448 138.6 2.39 53.4 0.1611 59.6 0.252 -64.5 3000 0.455 136.3 2.32 51.8 0.1688 59.0 0.251 -66.3 Rev.1.00, Apr.14.2003, page 11 of 21 HTT1132E Q1 S Parameter (VCE = 3 V, IC = 5 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.862 -16.2 14.11 166.8 0.0156 122.2 0.959 -9.0 200 0.814 -31.2 13.26 154.8 0.0316 77.4 0.917 -17.4 300 0.753 -45.1 12.28 144.4 0.0420 64.4 0.854 -24.3 400 0.692 -58.6 11.32 135.6 0.0522 69.2 0.780 -30.0 500 0.632 -71.2 10.35 127.7 0.0603 56.4 0.714 -34.2 600 0.577 -82.1 9.47 121.0 0.0647 57.1 0.656 -37.4 700 0.531 -92.1 8.61 115.3 0.0691 51.0 0.610 -39.8 800 0.493 -101.3 7.89 110.3 0.0738 52.4 0.567 -41.8 900 0.462 -109.5 7.26 105.9 0.0780 50.3 0.534 -43.1 1000 0.436 -117.6 6.69 102.0 0.0815 51.2 0.506 -43.9 1100 0.416 -124.6 6.20 98.5 0.0854 50.5 0.479 -44.9 1200 0.399 -131.6 5.77 95.2 0.0897 50.7 0.456 -45.8 1300 0.387 -138.1 5.40 92.3 0.0913 51.3 0.439 -46.4 1400 0.377 -144.3 5.06 89.5 0.0946 51.8 0.422 -47.2 1500 0.368 -150.0 4.76 86.9 0.0985 52.8 0.409 -47.9 1600 0.364 -155.7 4.49 84.5 0.1032 52.8 0.397 -48.9 1700 0.359 -161.2 4.26 82.1 0.1062 51.9 0.386 -49.6 1800 0.356 -165.9 4.04 79.9 0.1099 52.9 0.377 -50.5 1900 0.354 -170.9 3.85 77.7 0.1138 53.6 0.367 -51.4 2000 0.355 -175.2 3.67 75.6 0.1171 52.5 0.361 -52.2 2100 0.354 -179.5 3.51 73.6 0.1209 53.2 0.354 -53.3 2200 0.354 176.4 3.36 71.6 0.1241 53.5 0.347 -54.4 2300 0.359 172.2 3.22 69.7 0.1290 53.4 0.340 -55.5 2400 0.362 168.5 3.09 67.8 0.1329 53.3 0.338 -56.7 2500 0.365 165.1 2.98 66.0 0.1356 54.2 0.332 -58.0 2600 0.368 162.0 2.87 64.2 0.1392 53.6 0.327 -58.6 2700 0.372 158.4 2.77 62.5 0.1457 53.3 0.322 -60.2 2800 0.377 155.3 2.68 60.8 0.1483 54.0 0.322 -61.5 2900 0.382 152.3 2.59 59.2 0.1558 53.4 0.315 -62.9 3000 0.387 149.2 2.51 57.3 0.1592 53.9 0.315 -64.1 Rev.1.00, Apr.14.2003, page 12 of 21 HTT1132E Q1 S Parameter (VCE = 3 V, IC = 10 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.735 -27.1 23.94 159.9 0.0152 110.6 0.937 -14.4 200 0.659 -49.0 21.05 143.8 0.0244 74.4 0.823 -25.6 300 0.573 -68.7 18.08 131.2 0.0346 66.6 0.718 -32.5 400 0.503 -85.0 15.52 121.8 0.0384 62.2 0.625 -36.9 500 0.445 -99.3 13.35 114.4 0.0446 59.3 0.557 -39.3 600 0.410 -110.8 11.66 108.6 0.0502 56.3 0.504 -40.9 700 0.383 -121.0 10.27 104.0 0.0534 59.8 0.462 -41.8 800 0.362 -129.9 9.18 100.1 0.0603 59.8 0.431 -42.4 900 0.348 -137.9 8.29 96.6 0.0606 59.3 0.408 -42.8 1000 0.342 -144.9 7.54 93.5 0.0679 58.9 0.389 -42.9 1100 0.332 -151.4 6.91 90.7 0.0742 60.0 0.372 -43.0 1200 0.326 -157.6 6.38 88.1 0.0757 60.5 0.358 -43.6 1300 0.326 -162.9 5.92 85.7 0.0812 62.0 0.346 -44.0 1400 0.323 -168.3 5.52 83.6 0.0873 61.7 0.336 -44.4 1500 0.324 -172.9 5.17 81.4 0.0921 61.3 0.326 -44.9 1600 0.324 -177.3 4.87 79.4 0.0961 61.9 0.320 -45.8 1700 0.326 178.1 4.60 77.4 0.1001 62.1 0.314 -46.3 1800 0.326 174.6 4.35 75.6 0.1047 62.3 0.308 -47.4 1900 0.331 170.6 4.14 73.7 0.1093 62.3 0.301 -48.3 2000 0.333 167.1 3.94 71.9 0.1158 62.4 0.297 -49.1 2100 0.337 163.6 3.76 70.2 0.1193 62.7 0.293 -50.4 2200 0.340 160.4 3.59 68.5 0.1244 62.0 0.289 -51.5 2300 0.345 157.2 3.44 66.8 0.1278 61.3 0.284 -52.7 2400 0.351 154.4 3.30 65.2 0.1361 62.0 0.283 -54.3 2500 0.357 151.6 3.18 63.6 0.1411 61.2 0.277 -55.8 2600 0.359 149.0 3.06 62.0 0.1442 61.1 0.276 -57.0 2700 0.366 146.6 2.95 60.5 0.1493 60.7 0.274 -58.7 2800 0.371 144.2 2.85 59.0 0.1540 61.1 0.272 -60.0 2900 0.375 141.4 2.76 57.4 0.1577 60.5 0.267 -61.8 3000 0.382 138.9 2.67 55.9 0.1656 59.3 0.269 -63.2 Rev.1.00, Apr.14.2003, page 13 of 21 HTT1132E Q2 S Parameter (VCE = 1 V, IC = 3 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.884 -33.1 8.94 159.3 0.0353 43.6 0.942 -11.6 200 0.845 -61.9 7.95 142.4 0.0593 54.1 0.845 -22.4 300 0.798 -85.5 6.89 129.0 0.0767 51.1 0.743 -28.9 400 0.764 -103.7 5.94 119.0 0.0818 42.8 0.659 -32.6 500 0.745 -117.6 5.12 111.2 0.0847 37.3 0.599 -34.6 600 0.730 -127.9 4.49 104.9 0.0885 34.5 0.556 -36.0 700 0.719 -136.5 3.96 99.9 0.0904 32.5 0.524 -36.9 800 0.714 -143.4 3.55 95.5 0.0894 30.6 0.499 -37.9 900 0.710 -148.8 3.21 91.7 0.0905 31.7 0.481 -38.6 1000 0.708 -154.2 2.93 88.2 0.0894 33.1 0.463 -39.4 1100 0.704 -158.3 2.69 85.0 0.0900 33.1 0.453 -40.6 1200 0.703 -162.1 2.49 82.1 0.0912 36.0 0.444 -41.9 1300 0.703 -165.4 2.32 79.3 0.0892 36.1 0.434 -43.4 1400 0.704 -168.4 2.16 76.8 0.0892 38.1 0.427 -44.7 1500 0.702 -171.2 2.03 74.4 0.0899 40.1 0.423 -46.3 1600 0.701 -173.7 1.92 72.2 0.0914 41.7 0.414 -48.2 1700 0.704 -176.0 1.81 70.0 0.0929 44.2 0.409 -50.1 1800 0.704 -178.2 1.72 67.9 0.0928 47.2 0.407 -52.1 1900 0.706 179.8 1.64 65.8 0.0942 51.1 0.399 -54.1 2000 0.707 177.7 1.57 63.9 0.0981 52.8 0.397 -56.6 2100 0.709 175.8 1.50 61.9 0.1008 56.6 0.393 -58.8 2200 0.710 174.1 1.44 60.1 0.1043 58.7 0.390 -61.2 2300 0.713 172.5 1.39 58.3 0.1088 62.1 0.387 -63.9 2400 0.715 170.9 1.33 56.7 0.1126 63.7 0.385 -66.6 2500 0.718 169.4 1.29 54.9 0.1208 65.4 0.380 -69.1 2600 0.720 168.1 1.25 53.4 0.1257 67.9 0.380 -72.1 2700 0.723 166.5 1.20 51.9 0.1321 71.1 0.374 -75.0 2800 0.724 165.2 1.17 50.4 0.1396 71.6 0.374 -78.1 2900 0.727 163.9 1.14 48.9 0.1457 72.4 0.374 -81.7 3000 0.729 162.5 1.11 47.4 0.1551 73.7 0.371 -84.8 Rev.1.00, Apr.14.2003, page 14 of 21 HTT1132E Q2 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.823 -42.7 13.89 154.3 0.0263 74.7 0.908 -18.5 200 0.774 -76.7 11.65 135.3 0.0442 57.7 0.744 -31.4 300 0.719 -101.2 9.55 121.9 0.0625 42.4 0.623 -37.6 400 0.693 -118.3 7.92 112.6 0.0649 44.0 0.532 -40.9 500 0.675 -130.9 6.64 105.7 0.0704 39.9 0.469 -42.6 600 0.668 -140.1 5.72 100.3 0.0717 39.3 0.426 -43.5 700 0.662 -147.2 4.99 96.0 0.0744 37.8 0.394 -43.8 800 0.658 -153.0 4.43 92.3 0.0768 39.8 0.372 -44.5 900 0.659 -157.5 3.98 89.0 0.0791 41.8 0.357 -44.6 1000 0.655 -161.6 3.62 86.0 0.0799 44.5 0.337 -45.7 1100 0.656 -165.1 3.31 83.3 0.0835 45.2 0.327 -46.2 1200 0.654 -168.3 3.05 80.8 0.0836 46.2 0.318 -47.3 1300 0.654 -171.2 2.83 78.4 0.0871 47.8 0.308 -48.5 1400 0.657 -173.7 2.64 76.1 0.0908 50.7 0.301 -49.5 1500 0.655 -176.0 2.48 74.0 0.0918 52.6 0.295 -50.9 1600 0.657 -178.2 2.33 72.0 0.0981 54.2 0.290 -52.7 1700 0.659 179.9 2.21 70.0 0.1009 55.4 0.285 -54.6 1800 0.660 178.1 2.10 68.2 0.1056 58.6 0.281 -56.4 1900 0.662 176.4 2.00 66.2 0.1071 60.2 0.275 -58.8 2000 0.664 174.6 1.90 64.4 0.1120 60.6 0.273 -60.6 2100 0.667 172.9 1.82 62.6 0.1176 63.0 0.267 -63.1 2200 0.669 171.6 1.75 61.0 0.1228 64.5 0.265 -65.6 2300 0.670 170.0 1.68 59.3 0.1289 65.6 0.262 -69.0 2400 0.675 168.7 1.62 57.7 0.1351 66.5 0.260 -71.3 2500 0.677 167.5 1.56 56.2 0.1414 68.3 0.258 -74.5 2600 0.678 166.1 1.51 54.6 0.1463 68.7 0.253 -77.6 2700 0.683 164.9 1.46 53.1 0.1539 69.5 0.255 -81.2 2800 0.684 163.8 1.41 51.6 0.1616 70.4 0.250 -83.8 2900 0.686 162.5 1.37 50.2 0.1686 71.0 0.248 -87.7 3000 0.690 161.4 1.33 48.8 0.1785 71.2 0.249 -90.9 Rev.1.00, Apr.14.2003, page 15 of 21 HTT1132E Q2 S Parameter (VCE = 1 V, IC = 7 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.757 -49.8 18.09 150.1 0.0252 99.6 0.858 -23.4 200 0.706 -88.2 14.39 130.0 0.0399 52.6 0.680 -38.0 300 0.664 -112.6 11.31 117.0 0.0469 47.1 0.543 -44.7 400 0.648 -128.5 9.13 108.5 0.0559 45.8 0.446 -47.6 500 0.639 -139.6 7.57 102.3 0.0614 42.4 0.387 -49.2 600 0.631 -147.7 6.46 97.6 0.0630 41.9 0.344 -49.7 700 0.626 -153.8 5.60 93.8 0.0671 45.4 0.315 -49.6 800 0.628 -158.7 4.96 90.4 0.0692 48.0 0.294 -50.0 900 0.629 -163.0 4.45 87.5 0.0723 47.9 0.276 -49.8 1000 0.629 -166.5 4.03 84.8 0.0773 50.6 0.263 -50.7 1100 0.627 -169.4 3.68 82.3 0.0800 53.0 0.252 -51.5 1200 0.627 -172.2 3.39 79.9 0.0847 54.6 0.243 -52.2 1300 0.627 -174.7 3.14 77.8 0.0885 56.2 0.235 -53.4 1400 0.630 -177.0 2.93 75.7 0.0926 56.8 0.229 -54.5 1500 0.630 -178.7 2.74 73.7 0.0958 58.3 0.221 -56.0 1600 0.633 179.3 2.58 71.9 0.1031 59.5 0.217 -57.6 1700 0.635 177.4 2.44 70.0 0.1069 61.2 0.211 -59.6 1800 0.637 175.8 2.32 68.3 0.1112 63.8 0.208 -62.4 1900 0.639 174.2 2.20 66.5 0.1166 63.9 0.203 -64.5 2000 0.640 172.7 2.10 64.8 0.1230 65.0 0.200 -66.6 2100 0.641 171.4 2.01 63.0 0.1284 65.4 0.196 -69.2 2200 0.644 170.0 1.93 61.4 0.1351 66.5 0.193 -72.3 2300 0.647 168.6 1.85 59.8 0.1402 67.4 0.189 -75.3 2400 0.651 167.4 1.78 58.3 0.1467 68.3 0.188 -78.2 2500 0.654 166.2 1.72 56.9 0.1548 68.0 0.187 -81.5 2600 0.655 165.0 1.66 55.3 0.1607 69.5 0.183 -85.1 2700 0.658 164.1 1.61 53.9 0.1674 69.1 0.182 -88.4 2800 0.660 163.0 1.56 52.5 0.1746 69.9 0.180 -92.4 2900 0.664 161.7 1.51 51.0 0.1833 69.8 0.180 -95.7 3000 0.666 160.8 1.47 49.6 0.1911 70.0 0.181 -99.9 Rev.1.00, Apr.14.2003, page 16 of 21 HTT1132E Q2 S Parameter (VCE = 1 V, IC = 10 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.687 -61.4 23.30 145.0 0.0300 70.7 0.805 -29.7 200 0.643 -101.9 17.29 124.2 0.0381 49.2 0.587 -46.1 300 0.615 -125.2 13.02 112.2 0.0420 44.0 0.451 -52.5 400 0.606 -139.2 10.28 104.6 0.0534 49.1 0.364 -55.1 500 0.602 -148.6 8.43 99.2 0.0527 47.1 0.305 -57.1 600 0.600 -155.2 7.14 95.0 0.0577 50.3 0.273 -57.4 700 0.599 -160.3 6.18 91.7 0.0618 50.9 0.243 -58.0 800 0.600 -164.4 5.45 88.7 0.0678 53.6 0.225 -58.3 900 0.597 -167.7 4.88 86.0 0.0726 56.4 0.209 -58.4 1000 0.601 -170.8 4.41 83.6 0.0765 58.8 0.195 -59.7 1100 0.601 -173.4 4.02 81.3 0.0822 59.6 0.184 -60.5 1200 0.603 -175.8 3.70 79.2 0.0851 60.7 0.175 -60.9 1300 0.605 -178.0 3.43 77.2 0.0930 62.6 0.168 -62.6 1400 0.608 -179.9 3.19 75.3 0.0958 63.5 0.161 -63.8 1500 0.607 178.3 2.99 73.5 0.1025 63.4 0.154 -66.1 1600 0.612 176.8 2.81 71.8 0.1103 65.2 0.149 -68.2 1700 0.614 175.1 2.66 70.0 0.1123 65.7 0.145 -69.2 1800 0.613 173.7 2.52 68.4 0.1196 66.8 0.142 -72.3 1900 0.616 172.3 2.40 66.7 0.1262 67.5 0.137 -75.5 2000 0.617 170.9 2.29 65.1 0.1331 67.2 0.134 -77.7 2100 0.620 169.5 2.18 63.4 0.1385 68.5 0.131 -81.7 2200 0.623 168.4 2.09 61.9 0.1451 68.2 0.129 -84.9 2300 0.626 167.1 2.01 60.4 0.1512 68.2 0.127 -88.7 2400 0.629 166.0 1.93 59.0 0.1595 68.6 0.126 -92.9 2500 0.633 165.0 1.86 57.5 0.1662 68.5 0.125 -97.0 2600 0.634 164.1 1.80 56.1 0.1714 68.4 0.124 -100.9 2700 0.638 163.0 1.74 54.7 0.1797 68.6 0.123 -106.0 2800 0.640 162.0 1.69 53.3 0.1866 69.0 0.126 -110.4 2900 0.645 161.0 1.64 52.0 0.1952 69.0 0.126 -114.3 3000 0.647 160.2 1.59 50.5 0.2013 68.7 0.128 -117.6 Rev.1.00, Apr.14.2003, page 17 of 21 HTT1132E Q2 S Parameter (VCE = 3 V, IC = 5 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.830 -38.7 13.97 156.0 0.0134 59.3 0.917 -15.0 200 0.774 -70.9 11.91 137.7 0.0420 58.7 0.785 -26.1 300 0.711 -95.8 9.90 124.4 0.0474 45.9 0.675 -31.5 400 0.691 -113.5 8.28 114.9 0.0619 45.0 0.587 -34.0 500 0.669 -126.3 7.01 107.8 0.0615 41.8 0.531 -35.1 600 0.658 -136.0 6.07 102.4 0.0641 40.0 0.486 -35.7 700 0.649 -143.6 5.30 98.0 0.0650 40.4 0.458 -35.5 800 0.644 -149.6 4.72 94.3 0.0676 41.1 0.437 -35.9 900 0.641 -154.8 4.25 90.9 0.0711 44.8 0.420 -36.4 1000 0.641 -158.7 3.86 87.9 0.0723 46.3 0.404 -36.6 1100 0.642 -162.7 3.53 85.2 0.0746 47.9 0.393 -36.7 1200 0.640 -166.0 3.26 82.7 0.0761 49.2 0.384 -37.6 1300 0.639 -169.1 3.02 80.3 0.0775 51.2 0.377 -38.6 1400 0.639 -171.6 2.82 78.1 0.0817 52.5 0.369 -39.7 1500 0.641 -174.0 2.65 75.9 0.0828 55.1 0.361 -40.8 1600 0.640 -176.5 2.49 74.0 0.0869 57.7 0.359 -41.8 1700 0.643 -178.5 2.36 72.0 0.0891 59.0 0.354 -43.3 1800 0.642 179.7 2.24 70.2 0.0928 61.4 0.348 -44.9 1900 0.645 177.7 2.13 68.3 0.0975 63.5 0.343 -46.7 2000 0.646 176.0 2.03 66.5 0.1025 64.1 0.339 -48.3 2100 0.649 174.3 1.94 64.8 0.1082 66.3 0.334 -50.3 2200 0.650 172.8 1.86 63.1 0.1121 68.3 0.331 -52.3 2300 0.653 171.4 1.79 61.4 0.1170 69.4 0.324 -54.6 2400 0.657 169.9 1.72 59.9 0.1227 71.0 0.324 -56.7 2500 0.659 168.6 1.66 58.3 0.1294 71.5 0.318 -58.8 2600 0.662 167.4 1.61 56.9 0.1347 73.5 0.315 -61.5 2700 0.664 166.1 1.56 55.4 0.1425 73.7 0.312 -63.9 2800 0.664 164.8 1.51 53.9 0.1477 74.2 0.308 -66.4 2900 0.670 163.7 1.47 52.6 0.1575 74.8 0.306 -69.5 3000 0.670 162.4 1.42 51.0 0.1641 75.8 0.301 -71.9 Rev.1.00, Apr.14.2003, page 18 of 21 HTT1132E Q2 S Parameter (VCE = 3 V, IC = 10 mA, ZO = 50 Ω) S11 f (MHz) S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 100 0.694 -54.3 23.74 147.6 0.0310 65.3 0.814 -25.6 200 0.640 -94.8 18.11 127.1 0.0349 65.9 0.641 -37.9 300 0.600 -118.1 13.86 114.7 0.0386 52.7 0.503 -43.2 400 0.583 -133.3 11.04 106.8 0.0416 55.9 0.421 -44.8 500 0.582 -143.4 9.09 101.2 0.0514 51.1 0.366 -44.7 600 0.575 -151.1 7.72 96.9 0.0511 54.3 0.331 -43.9 700 0.574 -156.9 6.68 93.4 0.0562 53.6 0.307 -43.5 800 0.574 -161.1 5.90 90.4 0.0599 55.9 0.289 -43.7 900 0.575 -165.1 5.28 87.7 0.0643 57.3 0.273 -42.9 1000 0.575 -168.2 4.78 85.3 0.0691 59.0 0.260 -43.2 1100 0.574 -171.2 4.36 83.0 0.0737 60.7 0.250 -42.8 1200 0.577 -173.5 4.01 80.9 0.0781 63.1 0.241 -43.4 1300 0.579 -175.9 3.72 78.9 0.0820 63.6 0.236 -43.6 1400 0.580 -177.9 3.47 77.0 0.0870 65.0 0.229 -44.3 1500 0.580 -179.6 3.24 75.2 0.0939 65.3 0.223 -45.3 1600 0.582 178.6 3.05 73.5 0.0979 67.5 0.217 -46.6 1700 0.585 176.8 2.88 71.8 0.1025 67.3 0.211 -48.0 1800 0.585 175.3 2.73 70.2 0.1093 68.9 0.208 -49.1 1900 0.590 173.8 2.60 68.6 0.1142 69.5 0.202 -50.8 2000 0.591 172.4 2.48 67.0 0.1207 70.5 0.198 -52.3 2100 0.592 171.0 2.37 65.3 0.1270 70.5 0.195 -54.2 2200 0.596 169.9 2.27 63.9 0.1325 70.7 0.189 -56.4 2300 0.599 168.7 2.18 62.4 0.1399 71.8 0.185 -59.2 2400 0.601 167.6 2.10 61.0 0.1464 71.9 0.181 -61.7 2500 0.605 166.3 2.02 59.4 0.1509 71.8 0.177 -65.0 2600 0.610 165.6 1.95 58.1 0.1575 72.5 0.172 -66.7 2700 0.611 164.5 1.89 56.8 0.1634 72.2 0.170 -69.7 2800 0.612 163.5 1.83 55.4 0.1714 72.4 0.168 -72.8 2900 0.616 162.4 1.77 54.0 0.1788 72.3 0.164 -76.2 3000 0.619 161.5 1.73 52.7 0.1883 72.4 0.161 -78.7 Rev.1.00, Apr.14.2003, page 19 of 21 HTT1132E Package Dimensions As of January, 2003 Unit: mm +0.1 0.15–0.05 (0.4) (0.2) (0.1) 0.8 ± 0.1 1.0 ± 0.05 (0.1) +0.1 6-0.15 –0.05 (0.2) 1.2 ± 0.05 (0.4) 0.5 Max 0.8 ± 0.1 Package Code JEDEC JEITA Mass (reference value) Rev.1.00, Apr.14.2003, page 20 of 21 EMFPAK-6 — — 0.0012 g HTT1132E Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. http://www.renesas.com Copyright © 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan. Colophon 0.0 Rev.1.00, Apr.14.2003, page 21 of 21