2SC2620 Silicon NPN Epitaxial Planar REJ03G0704-0200 (Previous ADE-208-1071) Rev.2.00 Aug.10.2005 Application VHF amplifier, Local oscillator Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 7 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 100 150 –55 to +150 Unit V V V mA mW °C °C 2SC2620 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob Note: 1. The 2SC2620 is grouped by hFE as follows. Grade B C Mark QB QC hFE 60 to 120 100 to 200 Rev.2.00 Aug 10, 2005 page 2 of 7 Min 30 20 4 — — 60 — — — — Typ — — — — — — 0.17 0.72 940 0.9 Max — — — 0.5 0.5 200 — — — — Unit V V V µA µA V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 10 V, IC = 0 VEB = 2 V, IC = 0 VCE = 6 V, IC = 1 mA IC = 20 mA, IB = 4 mA VCE = 6 mA, IC = 1 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz 2SC2620 Main Characteristics Typical Output Characteristics 150 Collector Current IC (mA) 20 100 50 0 50 16 12 P 100 150 =1 50 4 00 mW 25 µA 0 8 4 12 20 16 Collector to Emitter Voltage VCE (V) Typical Output Characteristics DC Current Transfer Ratio vs. Collector Current 120 50 40 4 30 3 2 20 1 10µA IB = 0 0 4 8 12 16 VCE = 6 V 100 80 60 40 20 0 0.1 20 Collector to Emitter Voltage VCE (V) 0.2 0.5 1.0 2 5 10 Collector Current IC (mA) Typical Transfer Cahracteristics (1) Typical Transfer Cahracteristics (2) 20 5 VCE = 6 V Collector Current IC (mA) Collector Current IC (mA) C 75 8 Ambient Temperature Ta (°C) 5 Collector Current IC (mA) 300 275 250 225 200 175 150 125 100 IB = 0 DC Current Transfer ratio hFE Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 16 12 8 4 0 0.6 0.7 0.8 Base to Emitter Voltage VBE (V) Rev.2.00 Aug 10, 2005 page 3 of 7 VCE = 6 V 4 3 2 1 0 0.6 0.7 0.8 Base to Emitter Voltage VBE (V) 20 2SC2620 Gain Bandwidth Product vs. Collector Current 1.5 f = 1 MHz IE = 0 1.3 Gain Bandwidth Product fT (MHz) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 1.1 0.9 0.7 0.5 0.3 1.0 10 3 30 1,000 VCE = 6 V 800 600 400 200 0 0.1 0.2 Noise Figure vs. Collector Current Noise figure NF (dB) Noise figure NF (dB) 2 0.5 1.0 2 5 10 4 2 0 20 Noise figure NF (dB) 50 100 200 300 p D.U.T. 500 VEE 0 10 20 Collecter to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 4 of 7 OUT Rl = 550 Ω 0.01 µ 0.01 µ 2 0.1 µ 10 p max 3k 5 1,000 Signal Source Resistance Rg (Ω) IN f = 100 MHz Rg = 100 Ω 4 2 500 100 MHz Power Gain Test Circuit VCE = 6 V f = 100 MHz Rg = 50 Ω 1 20 6 Noise Figure vs. Collector to Emitter Voltage 6 10 VCE = 6 V IC = 1 mA f = 100 MHz Collector Current IC (mA) 8 5 8 4 0 0.2 2 Noise Figure vs. Signal Source Resistance IC = 1 mA f = 100 MHz Rg = 50 Ω 6 1.0 Collector Current IC (mA) Collector to Base Voltage VCB (V) 8 0.5 0.01 µ VCC Unit R : Ω C:F 2SC2620 Input Admittance Characteristics –0.20 –0.16 –0.12 –0.08 –0.04 Input Suceptance bie (mS) 18 yie = gie + jbie VCE = 6 V 16 yre = gre + jbre VCE = 6 V 0 f = 50 MHz 14 –0.2 70 12 150 10 f = 200 MHz 8 150 200 100 –0.4 100 70 150 50 MHz 5 mA –0.6 6 100 70 3 mA 4 2 mA 2 50 IC = 1 mA 200 –0.8 IC = 5 mA 3 2 1 –1.0 0 2 4 6 10 12 14 16 18 8 Input Conductance gie (mS) 0 –20 20 40 60 80 2.4 yfe = gfe + jbfe VCE = 6 V IC = 1 mA 2 mA –40 f = 50 MHz 3 mA –60 70 –80 5 mA 200 –100 150 Output Admittance Characteristics 100 120 100 –120 Output Suceptance boe (mS) Forward Transfer Suceptance bfe (mS) Forward Transfer Admittance Characteristics Forward Transfer Conductance gfe (mS) 2.0 1.6 yoe = goe + jboe VCE = 6 V IC = 1 mA 2 5 3 f = 200 MHz 1.2 150 100 0.8 70 0.4 0 50 0.1 0.2 0.3 0.4 0.5 0.6 Output Conductance goe (mS) Input Admittance vs. Collector to Emitter Voltage Input Admittance vs. Collector Current 20 Input Admittance yie (mS) Input Admittance yie (mS) 10 bie 5 yie = gie + jbie IC = 1 mA f = 100 MHz 2 gie 1.0 0.5 1 2 5 10 20 Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 5 of 7 10 yie = gie + jbie VCE = 6 V f = 100 MHz 5 bie 2 1.0 0.5 0.2 0.1 gie 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 Reverse Transfer Suceptance bre (mS) Reverse Transfer Admittance Characteristics Reverse Transfer Conductance gre (mS) 2SC2620 –0.1 –5 –0.05 bre yre = gre + jbre IC = 1 mA f = 100 MHz –0.2 –0.02 –0.1 –0.01 gre –0.005 –0.05 1 2 5 10 20 –0.1 –1.0 bre –0.5 yre = gre + jbre VCE = 6 V f = 100 MHz –0.2 –0.1 –0.02 –0.002 –0.01 0.1 –bfe 10 5 0.5 1.0 2 5 10 20 100 50 yfe = gfe + jbfe VCE = 6 V f = 100 MHz 20 –bfe gfe 10 5 2 1 0.1 0.2 0.5 1.0 2 5 10 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Output Admittance vs. Collector to Emitter Voltage Output Admittance vs. Collector Current 2.0 goe 0.1 1.0 boe 0.05 0.5 yeo = goe + jboe IC = 1 mA f = 100 MHz 0.02 0.2 0.1 1 2 5 10 0.01 20 Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 6 of 7 Output Admittance yoe (mS) 0.2 2.0 Output Suceptance boe (mS) Forward Transrer Admittance yie (mS) 20 Output Conductance goe (mS) Forward Transfer Admittance yie (mS) gfe 10 –0.001 0.2 Forward Transrer Admittance vs. Collector Current yfe = gfe + jbfe IC = 1 mA f = 100 MHz 5 –0.01 Collector Current IC (mA) 100 2 gre –0.005 Forward Transfer Admittance vs. Collector to Emitter Voltage 1 –0.02 –0.05 Collector to Emitter Voltage VCE (V) 50 –0.05 boe 1.0 0.5 0.2 0.1 goe 0.05 0.02 0.1 yoe = goe + jboe VCE = 6 V f = 100 MHz 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 Reverse Transfer Conductance gre (mS) –1.0 Reverse Transfer Suceptance bre (mS) Reverse Transrer Admittance vs. Collector Current Reverse Transfer Conductance gre (mS) Reverse Transfer Suceptance bre (mS) Reverse Transfer Admittance vs. Collector to Emitter Voltage 2SC2620 Package Dimensions JEITA Package Code RENESAS Code Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A SC-59A D MASS[Typ.] 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SC2620QBTL-E 2SC2620QCTL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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