2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0757-0100 (Previous ADE-208-1468) Rev.1.00 Aug.10.2005 Application • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is “WG–“. *MFPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.1.00 Aug 10, 2005 page 1 of 8 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 4 1.5 50 80 150 −55 to +150 Unit V V V mA mW °C °C 2SC5812 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Collector output capacitance Gain bandwidth product Gain bandwidth product Forward transmission coefficient Noise figure Rev.1.00 Aug 10, 2005 page 2 of 8 Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre Min 15 100 Typ 120 0.2 Max 0.1 1 0.1 150 Unit V µA µA µA Test conditions IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 4 V, RBE = ∞ VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA pF VCE = 1 V, Emitter ground, f = 1 MHz Cob 0.4 0.7 pF fT(1) fT(2) |S21|2 8 14 11 15 17 GHz GHz dB VCB = 1 V, IE = 0, f = 1 MHz VCE = 1V, IC = 5 mA VCE = 1V, IC = 20 mA NF 1.0 1.7 dB VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz, ZS = ZL = 50 Ω 2SC5812 Main Characteristics Typical Output Characteristics 80 60 40 20 0 50 100 150 200 250 A 1 2 0 µA 100 µ A 8 0 µA 10 60 µA 40 µA 5 IB = 20 µA 1 4 hFE 200 VCE = 1 V 20 DC Current Transfer Ratio IC (mA) Collector Current 3 DC Current Transfer Ratio vs. Collector Current 25 15 10 5 0.2 0.4 0.6 0.8 VCE = 1 V 100 0 0.1 1.0 Reverse Transfer Capacitance Cre (pF) IE = 0 f = 1 MHz 0.8 0.6 0.4 0.2 0.5 1.0 1.5 2.0 Collector to Base Voltage Rev.1.00 Aug 10, 2005 page 3 of 8 2.5 3.0 VCB (V) 10 100 IC (mA) Reverse Transfer Capacitance vs. Collector to Base Voltage Collector Output Capacitance vs. Collector to Base Voltage 1.0 1.0 Collector Current Base to Emitter Voltage VBE (V) Collector Output Capacitance Cob (pF) 2 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 0 140 µ A 15 0 Ambient Temperature Ta (°C) 0 160 µA 180 µ 20 100 Collector Current IC (mA) Collector Power Dissipation PC (mW) Collector Power Dissipation Curve 1.0 Emitter ground f = 1 MHz 0.8 0.6 0.4 0.2 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector to Base Voltage VCB (V) 2SC5812 S21 Parameter vs. Collector Current 20 20 16 |S21|2 (dB) VCE = 1 V f = 1 GHz 12 S21 Parameter Gain Bandwidth Product fT (GHz) Gain Bandwidth Product vs. Collector Current 8 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) Noise Figure NF (dB) 5 VCE = 1 V f = 900 MHz 4 3 2 1 0 2 5 10 20 50 Collector Current IC (mA) Rev.1.00 Aug 10, 2005 page 4 of 8 12 8 4 VCE = 1 V f = 900 MHz 0 1 2 5 10 20 50 Collector Current IC (mA) Noise Figure vs. Collector Current 1 16 100 100 2SC5812 S11 Parameter vs. Frequency .8 S21 Parameter vs. Frequency 1 Scale: 8 / div. 90° 1.5 .6 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 0° 180° –10 –5 –4 –3 –.2 –30° –150° –.4 –2 –.6 –.8 –120° –1.5 –60° –1 –90° Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.04 / div. .8 1 1.5 .6 60° 120° 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 –10 –5 –4 –3 –.2 –30° –150° –.4 –2 –120° –60° –90° Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) Rev.1.00 Aug 10, 2005 page 5 of 8 –.6 –.8 –1.5 –1 Test conditions: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) 2SC5812 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.842 –16.3 15.23 164.9 0.015 80.2 0.963 –10.1 200 0.783 –31.7 14.17 152.2 0.027 72.9 0.904 –18.4 300 0.719 –44.6 12.84 141.4 0.037 66.8 0.826 –24.9 400 0.637 –55.4 11.41 131.8 0.045 62.9 0.754 –29.4 500 0.582 –65.9 10.25 124.8 0.051 60.8 0.691 –32.9 600 0.531 –73.2 9.16 118.6 0.056 60.1 0.638 –35.0 700 0.472 –80.9 8.22 113.1 0.061 59.7 0.595 –36.7 800 0.443 –87.0 7.49 108.9 0.065 60.0 0.561 –37.7 900 0.404 –92.3 6.80 104.6 0.069 60.7 0.530 –38.5 1000 0.377 –99.2 6.26 101.0 0.073 61.5 0.508 –39.1 1100 0.355 –103.4 5.80 98.1 0.077 62.8 0.490 –39.7 1200 0.337 –108.0 5.38 94.8 0.081 64.1 0.474 –40.4 1300 0.327 –112.6 5.04 92.4 0.085 65.0 0.461 –40.8 1400 0.305 –116.3 4.71 90.1 0.090 66.4 0.452 –41.7 1500 0.299 –120.3 4.45 87.7 0.094 67.5 0.440 –42.0 1600 0.297 –123.8 4.20 86.0 0.099 68.5 0.437 –42.8 1700 0.284 –127.7 3.98 83.6 0.104 70.0 0.428 –43.4 1800 0.282 –132.2 3.80 81.7 0.109 71.1 0.423 –44.3 1900 0.272 –134.3 3.62 79.8 0.114 72.0 0.418 –45.3 2000 0.268 –138.4 3.47 77.9 0.120 73.0 0.414 –46.0 Rev.1.00 Aug 10, 2005 page 6 of 8 2SC5812 (VCE = 1 V, IC = 20 mA, ZO = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.502 –40.3 36.64 147.5 0.013 76.3 0.824 –21.8 200 0.388 –66.7 27.85 127.8 0.021 70.3 0.653 –32.0 300 0.317 –84.6 21.13 116.2 0.027 69.3 0.531 –35.4 400 0.257 –99.2 16.75 108.5 0.034 72.2 0.460 –35.8 500 0.237 –109.6 13.87 103.5 0.040 73.6 0.416 –35.2 600 0.216 –115.5 11.77 99.5 0.047 75.0 0.387 –34.8 700 0.195 –125.0 10.19 96.1 0.054 75.6 0.367 –34.1 800 0.193 –129.2 9.00 93.5 0.060 76.3 0.352 –33.7 900 0.181 –135.9 8.03 90.8 0.068 77.1 0.340 –33.2 1000 0.179 –141.0 7.26 88.8 0.074 77.7 0.333 –33.3 1100 0.178 –142.4 6.66 86.8 0.081 78.1 0.326 –33.7 1200 0.176 –147.8 6.12 84.7 0.088 78.2 0.321 –34.0 1300 0.176 –150.0 5.68 83.2 0.094 78.4 0.317 –34.5 1400 0.166 –154.2 5.32 81.7 0.102 78.5 0.314 –35.1 1500 0.175 –158.0 4.97 80.0 0.109 78.6 0.311 –36.0 1600 0.172 –159.7 4.70 78.7 0.116 79.0 0.309 –36.8 1700 0.172 –162.4 4.43 77.0 0.123 78.9 0.307 –37.6 1800 0.179 –164.9 4.21 75.7 0.131 78.8 0.305 –38.6 1900 0.177 –166.8 4.01 74.3 0.138 78.7 0.304 –39.7 2000 0.183 –169.9 3.83 72.8 0.145 78.5 0.303 –40.8 Rev.1.00 Aug 10, 2005 page 7 of 8 2SC5812 Package Dimensions JEITA Package Code RENESAS Code SC-89 Modified Package Name PUSF0003ZA-A D MASS[Typ.] MFPAK / MFPAKV 0.0016g A e c LP E HE L A A b x M S e A Reference Symbol A2 A e1 A1 b b1 S I1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 b b1 c c1 D E e HE L LP x b2 e1 I1 Dimension in Millimeters Min 0.55 0 0.55 0.15 0.1 1.35 0.7 1.15 0.1 0.15 Nom 0.22 0.2 0.13 0.11 1.4 0.8 0.45 1.2 0.2 Max 0.6 0.01 0.59 0.3 0.15 1.45 0.9 1.25 0.3 0.45 0.05 0.35 0.75 0.5 Ordering Information Part Name 2SC5812WG-TR-E Quantity 9000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 Aug 10, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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