2SC5758 Silicon NPN Epitaxial VHF / UHF Wide band amplifier REJ03G0754-0500 (Previous ADE-208-1397D) Rev.5.00 Aug.10.2005 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is “WF–“. *MFPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.5.00 Aug 10, 2005 page 1 of 8 Symbol VCBO VCEO VEBO IC PC Ratings 10 3.5 1.5 80 80 Unit V V V mA mW Tj Tstg 150 –50 to +150 °C °C 2SC5758 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Rev.5.00 Aug 10, 2005 page 2 of 8 Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG Min 10 80 0.65 6 10 Typ 100 0.95 8 13 Max 600 200 100 130 1.25 Unit V nA nA nA pF GHz dB NF 1.0 2.0 dB Test conditions IC = 10 µA, IE = 0 VCB = 10 V, IE = 0 VCE = 3.5 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCB = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz 2SC5758 Main Characteristics Typical Output Characteristics 50 IC (mA) 100 80 40 20 0 500 50 100 150 Ambient Temperature 200 µA 400 µA 350 300 µA 250 µA A 150 µA 20 100 µA IB = 50 µA 10 0.5 1 1.5 2 2.5 Collector to Emitter Voltage Ta (°C) µA 200 µ 0 3 3.5 VCE (V) DC Current Transfer Ratio vs. Collector Current 200 50 VCE = 1 V hFE VCE = 1 V 40 DC Current Transfer Ratio IC (mA) 450 40 Typical Transfer Characteristics Collector Current µA 30 60 Collector Current Collector Power Dissipation Pc (mW) Collector Power Dissipation Curve 30 20 10 100 0 0 0.2 0.4 0.6 0.8 Base to Emitter Voltage 1 1 VBE (V) fT (GHz) 1.6 Gain Bandwidth Product Cob (pF) Collector Output Capacitance IE = 0 f = 1 MHz 1.2 0.8 0.4 0.8 1.2 Collector to Base Voltage Rev.5.00 Aug 10, 2005 page 3 of 8 1.6 10 20 50 100 IC (mA) Gain Bandwidth Product vs. Collector Current 2.0 0.4 5 Collector Current Collector Output Capacitance vs. Collector to Base Voltage 0 2 2.0 VCB (V) 20 VCE = 1 V f =2 GHz 16 12 8 4 0 1 2 5 10 Collector Current 20 50 IC (mA) 100 2SC5758 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 12 Noise Figure PG (dB) Power Gain 16 NF (dB) 5 VCE = 1 V f = 900 MHz 8 4 0 VCE = 1 V f = 900 MHz 4 3 2 1 0 1 2 5 10 Collector Current Rev.5.00 Aug 10, 2005 page 4 of 8 20 50 IC (mA) 100 1 2 5 10 Collector Current 20 50 IC (mA) 100 2SC5758 S21 Parameter vs. Frequency Scale: 8 / div. 90° S11 Parameter vs. Frequency .8 1 .6 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –90° Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) S12 Parameter vs. Frequency Scale: 0.06 / div. 90° S22 Parameter vs. Frequency .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) Rev.5.00 Aug 10, 2005 page 5 of 8 –2 –.6 –.8 –1 –1.5 Condition: VCE = 1 V , ZO = 50 Ω 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) 2SC5758 Sparameter (VCE = 1V, IC = 5mA, Zo = 50Ω) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.806 0.713 0.635 0.560 0.529 0.500 0.486 0.474 0.467 0.466 0.461 0.464 0.464 0.467 0.465 0.476 0.480 0.480 0.490 0.487 S21 ANG –31.9 –61.5 –85.3 –102.7 –117.1 –127.8 –137.2 –144.1 –151.1 –157.1 –162.4 –166.1 –169.9 –173.8 –177.2 179.9 177.4 173.4 172.0 169.3 Rev.5.00 Aug 10, 2005 page 6 of 8 MAG 14.60 12.31 10.02 8.22 6.94 5.97 5.20 4.65 4.14 3.77 3.45 3.19 2.99 2.78 2.62 2.46 2.36 2.24 2.14 2.06 S12 ANG 157.6 138.9 125.3 115.4 108.4 103.1 98.6 94.6 91.7 88.4 85.9 83.4 81.3 79.1 77.3 75.2 73.4 71.8 70.2 68.6 MAG 0.038 0.067 0.085 0.096 0.104 0.111 0.117 0.123 0.129 0.135 0.141 0.147 0.153 0.159 0.166 0.174 0.180 0.187 0.195 0.202 S22 ANG 72.8 59.5 51.3 47.2 45.5 44.6 44.8 45.7 46.7 47.7 48.6 49.7 51.0 51.8 53.0 53.8 54.7 55.6 56.5 57.0 MAG 0.901 0.757 0.610 0.501 0.421 0.360 0.314 0.278 0.249 0.226 0.208 0.194 0.181 0.172 0.165 0.159 0.155 0.154 0.154 0.153 ANG –24.3 –44.8 –60.1 –70.9 –79.8 –87.2 –93.1 –99.7 –105.1 –110.9 –116.0 –121.4 –127.1 –131.7 –137.5 –141.6 –147.4 –152.9 –157.6 –162.5 2SC5758 (VCE = 1V, IC = 20mA, Zo = 50Ω) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.487 0.466 0.465 0.459 0.461 0.462 0.468 0.468 0.474 0.473 0.478 0.486 0.477 0.493 0.493 0.502 0.506 0.511 0.517 0.523 S21 ANG –78.2 –120.9 –141.6 –154.5 –161.8 –168.1 –172.8 –176.5 179.1 176.8 173.5 170.7 168.8 166.3 163.6 161.7 160.8 157.7 156.4 154.5 Rev.5.00 Aug 10, 2005 page 7 of 8 MAG 31.25 20.22 14.16 10.81 8.74 7.34 6.30 5.56 4.93 4.46 4.07 3.75 3.51 3.26 3.07 2.88 2.74 2.62 2.49 2.40 S12 ANG 138.4 117.0 106.4 100.4 96.1 92.9 90.2 87.7 85.7 83.7 82.2 80.3 78.8 77.2 75.9 74.5 73.2 72.0 70.7 69.5 MAG 0.026 0.040 0.050 0.060 0.070 0.080 0.091 0.101 0.113 0.124 0.135 0.145 0.156 0.167 0.179 0.189 0.201 0.211 0.222 0.232 S22 ANG 64.0 57.9 58.9 61.5 63.7 65.8 67.1 68.3 69.0 69.5 69.8 70.2 70.2 70.1 70.4 70.4 70.2 69.8 69.9 69.4 MAG 0.679 0.469 0.362 0.311 0.283 0.268 0.258 0.253 0.249 0.249 0.249 0.251 0.251 0.254 0.256 0.260 0.263 0.268 0.275 0.280 ANG –53.9 –87.5 –109.1 –124.4 –135.8 –145.4 –153.2 –159.6 –165.5 –170.7 –175.1 –179.3 176.9 173.5 170.4 167.6 164.8 162.1 159.6 157.1 2SC5758 Package Dimensions JEITA Package Code RENESAS Code SC-89 Modified Package Name PUSF0003ZA-A D MASS[Typ.] MFPAK / MFPAKV 0.0016g A e c LP E HE L A A b x M S e A Reference Symbol A2 A e1 A1 b b1 S I1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 b b1 c c1 D E e HE L LP x b2 e1 I1 Dimension in Millimeters Min 0.55 0 0.55 0.15 0.1 1.35 0.7 1.15 0.1 0.15 Nom 0.22 0.2 0.13 0.11 1.4 0.8 0.45 1.2 0.2 Max 0.6 0.01 0.59 0.3 0.15 1.45 0.9 1.25 0.3 0.45 0.05 0.35 0.75 0.5 Ordering Information Part Name 2SC5758WF-TR-E Quantity 9000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Aug 10, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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