SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF (dB) • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz 1.4 24 1.2 21 GA 1 18 0.8 15 0.6 12 0.4 9 NF 0.2 The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. ELECTRICAL CHARACTERISTICS 6 3 0 1 10 20 Frequency, f (GHz) (TA = 25°C) PART NUMBER NE33284A PACKAGE OUTLINE 84AS SYMBOLS PARAMETERS AND CONDITIONS UNITS NFOPT1 Optimum Noise Figure, VDS = 2.0 V, IDS = 10 mA, f = 12 GHz f = 4 GHz dB dB GA 1 Associated Gain, VDS = 2.0 V, IDS = 10 mA, f = 12 GHz f = 4 GHz dB dB P1dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2.0 V, IDS = 10 mA VDS = 2.0 V, IDS = 20 mA IDSS MIN 9.5 13.0 TYP MAX 0.75 0.35 1.0 0.45 10.5 15.0 dBm dBm 11.2 12.0 Gain at P1dB, f = 12 GHz VDS = 2.0 V, IDS = 10 mA VDS = 2.0 V, IDS = 20 mA dB dB 10.8 11.0 Saturated Drain Current, VDS = 2.0 V,VGS = 0 V mA 15 40 80 VP Pinch-off Voltage, VDS = 2.0 V, IDS = 0.1 mA V -2.0 -0.8 -0.2 gm Transconductance, VDS = 2.0 V, ID = 10 mA mS 45 Gate to Source Leakage Current, VGS = -3.0 V µA 0.5 IGSO Associated Gain, GA (dB) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES G1dB NE33284A 70 RTH (CH-A) Thermal Resistance (Channel to Ambient) °C/W 630 RTH (CH-C)2 Thermal Resistance (Channel to Case) °C/W 280 10.0 310 Notes: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen. 2. RTH (channel to case) for package mounted on an infinite heat sink. California Eastern Laboratories NE33284A ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage IDS TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 2 V, IDS = 10 mA ΓOPT FREQ. NFOPT GA (GHz) (dB) (dB) MAG ANG Rn/50 1 0.29 21.3 0.85 28 0.48 2 0.31 18.3 0.82 40 0.27 4 0.35 15.0 0.74 62 0.16 6 0.42 13.5 0.67 85 0.13 V -3.0 Drain Current mA IDSS IGRF Gate Current µA 280 PIN RF Input (CW) dBm 15 TCH Channel Temperature °C 150 8 0.52 12.2 0.59 107 0.10 TSTG Storage Temperature °C -65 to +150 10 0.63 11.3 0.52 130 0.09 mW 165 12 0.75 10.5 0.45 168 0.10 14 0.90 9.9 0.37 -146 0.14 16 1.05 9.3 0.30 -100 0.22 18 1.25 8.8 0.22 -54 0.34 PT Total Power Dissipation Note: 1.Operation in excess of any one of these conditions may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) TRANSCONDUCTANCE vs. DRAIN CURRENT VDS = 2.0 V 300 120 250 100 Transconductance, gm (mS) Total Power Dissipation, PT (mW) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Infinite Heat sink 200 150 100 Free Air 50 0 80 60 40 20 0 0 25 50 75 100 125 150 175 0 200 10 20 30 40 50 Ambient Temperature, TA (°C) Drain Current, IDS (mA) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE NOISE FIGURE AND GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz 50 2 16 1.6 14 -0.1 V 30 -0.2 V 20 -0.3 V 10 1.2 12 GA 0.8 10 NF Tuned @ 10 mA only Tuned @ 10 mA only 0.4 -0.4 V -0.5 V Tuned @ each IDS 0 0 0.5 1 1.5 2 8 Tuned @ each IDS 2.5 3 6 0 0 Drain to Source Voltage, VDS (V) 5 10 15 20 25 30 Drain Current, IDS (mA) 35 40 Associated Gain, GA (dB) Noise Figure, NF (dB) Drain Current, IDS (mA) VGS = 0 V 40 NE33284A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) j50 +90˚ j25 +60˚ +120˚ j100 +30˚ +150˚ S11 20 GHz j10 S22 20 GHz 0 10 50 25 S12 .1 GHz 100 S22 .1 GHz 0˚ S21 .1 GHz S11 .1 GHz S21 20 GHz -30˚ -150˚ -j25 S12 20 GHz -j100 -120˚ -60˚ -90˚ -j50 VDS = 2 v, IDS = 10 mA FREQUENCY (GHz) MAG S11 ANG MAG S21 ANG MAG S12 ANG MAG S22 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 .999 .999 .998 .981 .935 .876 .809 .738 .671 .619 .578 .542 .499 .455 .431 .425 .417 .402 .393 .396 .426 .462 .491 -1.7 -4.0 -10.4 -21.3 -41.3 -60.8 -78.1 -94.7 -110.7 -125.6 -139.1 -151.7 -164.8 -179.3 164.4 148.0 133.1 116.8 98.3 78.7 61.5 49.2 33.8 5.712 5.660 5.660 5.604 5.414 5.117 4.732 4.382 4.058 3.746 3.491 3.289 3.130 2.995 2.855 2.752 2.664 2.579 2.515 2.430 2.348 2.281 2.208 178.3 176.3 170.2 160.0 141.1 123.0 106.6 91.7 77.6 64.1 52.2 40.1 28.3 16.4 4.7 -6.8 -17.9 -30.2 -42.7 -55.5 -68.3 -80.1 -93.7 .002 .004 .011 .022 .041 .056 .071 .080 .087 .094 .100 .106 .113 .121 .126 .133 .139 .149 .155 .163 .170 .173 .176 89.2 88.9 83.5 76.3 65.0 54.2 44.7 36.4 29.1 22.6 18.4 13.6 7.2 3.1 -2.3 -8.1 -13.5 -20.8 -29.0 -37.4 -45.7 -56.0 -66.0 .630 .630 .632 .627 .599 .564 .534 .492 .455 .430 .416 .405 .394 .377 .361 .340 .332 .336 .334 .337 .333 .328 .320 K S21 (dB) MAG1 (dB) 0.05 0.02 0.04 0.14 0.25 0.36 0.47 0.59 0.70 0.79 0.85 0.90 0.96 1.00 1.04 1.04 1.04 1.03 1.03 1.01 0.99 0.96 0.96 15.1 15.1 15.1 15.0 14.7 14.2 13.5 12.8 12.2 11.5 10.9 10.3 9.9 9.5 9.1 8.8 8.5 8.2 8.0 7.7 7.4 7.2 6.9 34.6 31.5 27.1 24.1 21.2 19.6 18.2 17.4 16.7 16.0 15.4 14.9 14.4 13.7 12.3 11.9 11.5 11.4 11.1 11.0 11.4 11.2 11.0 ANG -1.2 -2.8 -7.0 -13.9 -26.9 -39.1 -49.8 -60.2 -69.9 -79.5 -88.6 -97.2 -106.0 -114.7 -125.2 -137.0 -149.2 -161.8 -174.8 171.2 156.8 139.7 121.8 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE33284A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) VDS = 2 V, IDS = 20 mA FREQUENCY S11 (GHz) MAG 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 .999 .999 .995 .977 .919 .847 .769 .693 .625 .574 .533 .496 .455 .414 .391 .387 .384 .369 .364 .368 .400 .434 .468 S21 S12 ANG MAG ANG MAG -2.0 -4.3 -11.2 -22.7 -43.9 -63.8 -81.5 -97.9 -113.5 -128.4 -141.7 -153.9 -167.0 178.7 162.5 145.8 131.2 114.7 95.6 75.8 59.4 47.6 32.4 7.099 7.053 7.053 6.935 6.540 6.026 5.485 4.991 4.558 4.181 3.865 3.614 3.423 3.256 3.098 2.975 2.873 2.783 2.713 2.622 2.529 2.459 2.386 178.3 175.9 169.4 158.7 138.8 120.3 103.9 89.0 75.2 61.9 50.4 38.7 27.0 15.8 4.2 -7.1 -17.9 -29.9 -42.0 -54.7 -66.7 -78.7 -92.0 .002 .004 .010 .019 .037 .051 .064 .074 .082 .090 .099 .107 .116 .126 .133 .141 .149 .160 .165 .175 .181 .182 .185 S22 ANG 89.3 88.4 83.2 76.7 67.0 57.5 48.6 41.5 35.3 29.7 24.7 19.6 13.8 8.2 2.2 -4.6 -10.8 -18.3 -27.1 -35.5 -44.9 -55.1 -65.8 MAG .536 .536 .536 .532 .506 .473 .446 .412 .382 .360 .353 .347 .341 .327 .315 .293 .288 .290 .289 .289 .286 .280 .275 K ANG -1.2 -2.7 -7.0 -13.9 -26.3 -38.2 -47.9 -57.4 -66.2 -75.7 -83.9 -91.9 -100.7 -109.0 -119.4 -131.7 -144.0 -156.5 -170.3 174.4 158.9 140.9 122.3 0.05 0.03 0.08 0.17 0.31 0.44 0.57 0.69 0.80 0.87 0.91 0.95 0.98 1.01 1.03 1.03 1.02 1.01 1.01 0.99 0.97 0.96 0.95 S21 MAG1 (dB) (dB) 17.0 17.0 17.0 16.8 16.3 15.6 14.9 14.0 13.2 12.4 11.7 11.2 10.7 10.2 9.8 9.5 9.2 8.9 8.7 8.4 8.1 7.8 7.5 35.5 32.5 28.5 25.6 22.5 20.7 19.3 18.3 17.4 16.7 15.9 15.3 14.7 13.4 12.6 12.1 12.0 12.0 11.6 11.8 11.4 11.3 11.1 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain OUTLINE DIMENSIONS (Units in mm) NE33284A PACKAGE OUTLINE 84AS 1.78 ± 0.2 ORDERING INFORMATION1 PART NUMBER S NE33284AS 1.78 ± 0.2 D U S G 0.5 ± 0.1 (ALL LEADS) 1.0 ±0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. NE33284A-T1 AVAILABILITY PACKAGE Bulk up to 1K 84AS 1K/Reel 84AS Note: Long leaded (1.7 mm min.) 84ASL package available upon request in bulk quantities up to 1000 pcs. To order specify NE33284A-SL. NE33284A NE33284A LINEAR MODEL SCHEMATIC 0.001 CGD_PKG RG_PKG LG_PKG LG GATE 0.28 0.5 CHIP RG CDG 0.5 RD 0.04 CGS 0.22 0.16 GGS 1e_5 CCG_PKG 0.14 0.24 g t f=281GHz CDC 0.05 RI 0.52 RDS LD LD_PKG 0.13 0.3 CDS 0.05 RD_PKG DRAIN 0.2 CCD_PKG 0.1 RS 0.19 LS_PKG 0.12 RS_PKG 0.2 0.01 0.01 CSG_PKG CSD_PKG SOURCE BIAS DEPENDENT MODEL PARAMETERS Parameters 2 V, 10 mA g 73 mS t RDS 2 V, 20 mA 97 mS 2 V, 30 mA 104 mS 5 pSec 5 pSec 5.5 pSec 210 ohms 156 ohms 140 ohms UNITS MODEL RANGE Parameter capacitance inductance resistance conductance Units picofarads nanohenries ohms millisiemans EXCLUSIVE NORTH AMERICAN AGENT FOR Frequency: Bias: Date: 0.1 to 20 GHz VDS = 2 V, ID = 10, 20, 30 mA 7/2/96 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE