NESG2031M16

NPN SILICON GERMANIUM RF TRANSISTOR
NESG2031M16
D
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
UE
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
Part Number
NESG2031M16
NESG2031M16-T3
O
NT
IN
ORDERING INFORMATION
Order Number
Package
NESG2031M16-A
Quantity
6-pin lead-less minimold
50 pcs
• 8 mm wide embossed taping
(M16, 1208 PKG)
(Non reel)
• Pin 1 (Collector), Pin 6 (Emitter) face the
(Pb-Free)
NESG2031M16-T3-A
Supplying Form
10 kpcs/reel
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
13.0
V
Collector to Emitter Voltage
VCEO
5.0
V
Emitter to Base Voltage
VEBO
1.5
V
SC
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Parameter
35
mA
175
mW
Collector Current
IC
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
2
Note Mounted on 1.08 cm  1.0 mm (t) glass epoxy PCB
DI
<R>
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10394EJ03V0DS (3rd edition)
Date Published September 2009 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NESG2031M16
ELECTRICAL CHARACTERISTICS (T A = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
ICBO
VCB = 5 V, IE = 0 mA


100
nA
Emitter Cut-off Current
IEBO

100
nA
190
260

25

GHz
DC Current Gain
hFE
VEB = 1 V, IC = 0 mA

Note 1
VCE = 2 V, IC = 5 mA
130
fT
VCE = 3 V, IC = 20 mA, f = 2 GHz
20
Gain Bandwidth Product
S21e
Insertion Power Gain
2
UE
RF Characteristics
D
Collector Cut-off Current
VCE = 3 V, IC = 20 mA, f = 2 GHz
16.0
18.0

dB
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt

0.8
1.1
dB
Noise Figure (2)
NF
VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt

1.3

dB
Associated Gain (1)
Ga
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
15.0
17.0

dB
Associated Gain (2)
Ga
VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt

10.0

dB
VCB = 2 V, IE = 0 mA, f = 1 MHz

0.15
0.25
pF
VCE = 3 V, IC = 20 mA, f = 2 GHz
19.0
21.5

dB

13

dBm

23

dBm
O
NT
IN
Noise Figure (1)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
Note 2
MSG
Note
3
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3 V, IC (set) = 20 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
Output 3rd Order Intercept Point
OIP3
VCE = 3 V, IC (set) = 20 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
Rank
FB/YFB
Marking
zF
hFE Value
130 to 260
DI
<R>
SC
hFE CLASSIFICATION
2
Data Sheet PU10394EJ03V0DS
NESG2031M16
SC
O
NT
IN
UE
D
TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)
DI
<R>
Remark The graphs indicate nominal characteristics.
Data Sheet PU10394EJ03V0DS
3
O
NT
IN
UE
D
NESG2031M16
DI
SC
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10394EJ03V0DS
DI
SC
O
NT
IN
UE
D
NESG2031M16
Remark The graphs indicate nominal characteristics.
Data Sheet PU10394EJ03V0DS
5
DI
SC
O
NT
IN
UE
D
NESG2031M16
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10394EJ03V0DS
DI
SC
O
NT
IN
UE
D
NESG2031M16
Remark The graphs indicate nominal characteristics.
Data Sheet PU10394EJ03V0DS
7
O
NT
IN
UE
D
NESG2031M16
DI
SC
Remark The graphs indicate nominal characteristics.
8
Data Sheet PU10394EJ03V0DS
DI
SC
O
NT
IN
UE
D
NESG2031M16
Remark The graphs indicate nominal characteristics.
Data Sheet PU10394EJ03V0DS
9
O
NT
IN
UE
D
NESG2031M16
Remark The graphs indicate nominal characteristics.
SC
S-PARAMETERS
DI
<R>
10
Data Sheet PU10394EJ03V0DS
NESG2031M16
PACKAGE DIMENSIONS
O
NT
IN
UE
D
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical
DI
SC
performance and heat sinking.
Data Sheet PU10394EJ03V0DS
11