CEL NESG260234-T1

NPN SILICON GERMANIUM RF TRANSISTOR
NESG260234
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (1 W)
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• This product is suitable for medium output power (1 W) amplification
Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz
Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
• MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz
• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
NESG260234
Order Number
Package
NESG260234-AZ
3-pin power minimold
(Pb-Free)
NESG260234-T1
Quantity
Note1, 2
25 pcs
Supplying Form
• Magazine case
(Non reel)
NESG260234-T1-AZ
1 kpcs/reel
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1. Contains Lead in the part except the electrode terminals.
2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
9.2
V
Emitter to Base Voltage
VEBO
2.8
V
IC
600
mA
1.9
W
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
2
Note Mounted on 34.2 cm × 0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10547EJ02V0DS (2nd edition)
Date Published May 2005 CP(K)
The mark  shows major revised points.
NESG260234
THERMAL RESISTANCE (TA = +25°C)
Parameter
Termal Resistance from Junction to
Ambient
Symbol
Ratings
Unit
Rthj-a
65
°C/W
Note
2
Note Mounted on 34.2 cm × 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Collector to Emitter Voltage
Collector Current
Input Power
Note
Symbol
MIN.
TYP.
MAX.
Unit
VCE
−
6.0
7.2
V
IC
−
400
500
mA
Pin
−
15
20
dBm
Note Input power under conditions of VCE ≤ 6.0 V, f = 460 MHz
2
Data Sheet PU10547EJ02V0DS
NESG260234
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 9.2 V, IE = 0 mA
−
−
1
µA
Emitter Cut-off Current
IEBO
VEB = 1.0 V, IC = 0 mA
−
−
1
µA
VCE = 3 V, IC = 100 mA
80
120
180
−
GL
VCE = 6 V, IC (set) = 30 mA (RF OFF),
19
22
−
dB
GL
VCE = 6 V, IC (set) = 30 mA (RF OFF),
−
19
−
dB
28.5
30.0
−
dBm
−
30.0
−
dBm
−
50
−
%
−
60
−
%
DC Current Gain
hFE
Note
RF Characteristics
Linner Gain (1)
f = 460 MHz, Pin = 0 dBm
Linner Gain (2)
f = 900 MHz, Pin = 0 dBm
Output Power (1)
Pout
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm
Output Power (2)
Pout
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
ηC
Collector Efficiency (1)
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm
ηC
Collector Efficiency (2)
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
Note Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Rank
FB
Marking
SP
hFE Value
80 to 180
Data Sheet PU10547EJ02V0DS
3
NESG260234
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (mW)
2.0
Mounted on glass epoxy PWB
(34.2 cm2 × 0.8 mm (t) )
1.6
1.2
0.8
Nature Neglect
0.4
25
0
50
75
100
125
150
1.6
f = 1 MHz
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
175
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
10
VCE = 5 V
100
Collector Current IC (mA)
Collector Current IC (mA)
8
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
10
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.6
0.7
0.8
0.9
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
VCE = 6 V
1.0
VCE = 7 V
100
Collector Current IC (mA)
10
1
0.1
0.01
10
1
0.1
0.01
0.001
0.001
0.0001
0.4
0.5
Base to Emitter Voltage VBE (V)
100
Collector Current IC (mA)
6
Collector to Base Voltage VCB (V)
VCE = 3 V
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
Base to Emitter Voltage VBE (V)
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
4
4
Ambient Temperature TA (˚C)
1 000
1 000
2
Data Sheet PU10547EJ02V0DS
1.0
NESG260234
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
500
10 mA
400
9 mA
8 mA
7 mA
6 mA
5 mA
300
4 mA
3 mA
200
2 mA
100
IB = 1 mA
0
1
2
3
4
5
6
7
8
9
10
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
VCE = 6 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 5 V
100
10
1
10
100
100
Collector Current IC (mA)
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
1 000
20
100
10
100
1 000
Gain Bandwidth Product fT (GHz)
VCE = 7 V
DC Current Gain hFE
10
1
10
1 000
1 000
1
10
100
VCE = 5 V
f = 460 MHz
15
10
5
0
10
100
1 000
Collector Current IC (mA)
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10547EJ02V0DS
5
NESG260234
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
Gain Bandwidth Product fT (GHz)
VCE = 6 V
f = 460 MHz
15
10
5
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
100
100
1 000
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
VCE = 5 V
IC = 100 mA
30
MAG
25
20
MAG
15
MSG
10
|S21e|2
5
0
0.1
1.0
10
40
VCE = 6 V
IC = 100 mA
35
MSG
30
MAG
25
20
MAG
15
MSG
10
|S21e|2
5
0
0.1
1.0
10
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
40
VCE = 7 V
IC = 100 mA
35
MSG
MAG
25
20
MAG
15
MSG
10
|S21e|2
1.0
10
Frequency f (GHz)
30
MSG
25
MAG
20
|S21e|2
15
10
5
VCE = 5 V
f = 460 MHz
0
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
6
5
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
MSG
0
0.1
10
Collector Current IC (mA)
35
5
15
Collector Current IC (mA)
40
30
VCE = 7 V
f = 460 MHz
0
10
1 000
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0
10
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Gain Bandwidth Product fT (GHz)
20
Data Sheet PU10547EJ02V0DS
1 000
NESG260234
30
MSG
25
MAG
20
|S21e|2
15
10
5
VCE = 6 V
f = 460 MHz
0
10
100
1 000
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
MSG
25
MAG
20
|S21e|2
15
10
5
VCE = 7 V
f = 460 MHz
0
10
100
Collector Current IC (mA)
1 000
Collector Current IC (mA)
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
500
VCE = 4.5 V, f = 460 MHz
IC (set) = 30 mA
30
400
Pout
25
300
GP
20
200
IC
15
10
–5
100
ηC
0
5
10
Input Power Pin (dBm)
15
0
20
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
35
500
VCE = 6 V, f = 460 MHz
IC (set) = 30 mA
30
400
Pout
25
300
GP
20
200
IC
15
10
–5
100
ηC
0
5
10
15
0
20
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10547EJ02V0DS
7
Collector Current IC (mA), Collector Efficiency η C (%)
35
Output Power Pout (dBm), Power Gain GP (dB)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Collector Current IC (mA), Collector Efficiency η C (%)
Output Power Pout (dBm), Power Gain GP (dB)
PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
NESG260234
EVALUATION CIRCUIT (f = 460 MHz)
VCE
VBE
R1
C5
C4
L2
L5
L1
C3
RF OUT
L3
RF IN
C2
C1
L4
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
EVALUATION BOARD (f = 460 MHz)
VCE GND
GND VBE
R1
L2
C4
C5
L1
SP
INPUT
OUTPUT
C3
L4
L3
C2
34-05
C1
L5
Notes
1. 20 × 20 mm, t = 0.8 mm double sided copper clad glass epoxy PWB.
2. Back side: GND pattern
3. Solder gold plated on pattern
4.
8
: Through holes
Data Sheet PU10547EJ02V0DS
NESG260234
COMPONENT LIST
Component
Maker
Value
Size (TYPE)
Purpose
C1
Murata
10 pF
1005
Input DC Block/Input RF Matching
C2
Murata
4 pF
1005
Input RF Matching
C3
Murata
33 pF
1005
Input DC Block/Output RF Matching
C4
Murata
10 000 pF
1005
RF GND
C5
Murata
1 µF
1608
RF GND
L1
Toko
68 nH
1005
RF Block/Input RF Matching
L2
Toko
33 nH
LLQ2021
L3
Toko
1 nH
1005
Input RF Matching
L4
Toko
8.2 nH
1005
Input RF Matching
L5
Toko
8.2 nH
LLQ2021
R1
SSM
15 Ω
1608
RF Block/Output RF Matching
Output RF Matching
Improve Stability
Data Sheet PU10547EJ02V0DS
9
NESG260234
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
4.5±0.1
1.5±0.1
0.8 MIN.
2
1
3
0.42±0.06
4.0±0.25
2.5±0.1
1.6±0.2
0.42±0.06
0.47±0.06
1.5
3.0
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
10
Data Sheet PU10547EJ02V0DS
0.41+0.03
–0.06
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
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