NESG3031M05

NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M05
D
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
FEATURES
UE
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 14.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
ORDERING INFORMATION
Order Number
NESG3031M05
NESG3031M05-A
Package
Quantity
Supplying Form
Flat-lead 4-pin thin-type super
minimold (M05, 2012 PKG)
(Pb-Free)
50 pcs
(Non reel)
• 8 mm w ide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
NT
Part Number
NESG3031M05-T1 NESG3031M05-T1-A
3
kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
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ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V CBO
12.0
V
Collector to Emitter Voltage
V CEO
4.3
V
V EBO
1.5
V
IC
35
mA
Ptot Note
150
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
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• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
Emitter to Base Voltage
Collector Current
Total Pow er Dissipation
Note Mounted on 1.08 cm 2  1.0 mm (t) glass epoxy PWB
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10414EJ04V0DS (4th edition)
Date Published December 2008 NS
The mark <R> show s major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find w hat:" field.
NESG3031M05
ELECTRICAL CHARACTERISTICS (T A = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
ICBO
V CB = 5 V, IE = 0 mA


100
nA
Emitter Cut-off Current
IEBO
V EB = 1 V, IC = 0 mA


100
nA
V CE = 2 V, IC = 6 mA
220
300
380

S21e 2
V CE = 3 V, IC = 20 mA, f = 5.8 GHz
6.0
8.5

dB
Noise Figure (1)
NF
V CE = 2 V, IC = 6 mA, f = 2.4 GHz,
ZS = ZSopt, ZL = ZLopt

0.6

dB
Noise Figure (2)
NF
V CE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt

0.95

dB
Noise Figure (3)
NF
V CE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt

1.1
1.5
dB
Associated Gain (1)
Ga
V CE = 2 V, IC = 6 mA, f = 2.4 GHz,
ZS = ZSopt, ZL = ZLopt

16.0

dB
Associated Gain (2)
Ga
V CE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt

10.0

dB
Associated Gain (3)
Ga
V CE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
7.5
9.5

dB

0.15
0.25
pF
V CE = 3 V, IC = 20 mA, f = 5.8 GHz
11.0
14.0

dB
PO (1 dB)
V CE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, Z S = ZSopt, ZL = ZLopt

13.0

dBm
OIP3
V CE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, Z S = ZSopt, ZL = ZLopt

18.0

dBm
DC Current Gain
hFE
Note 1
Maximum Stable Pow er Gain
Cre Note 2
IN
Reverse Transfer Capacitance
V CB = 2 V, IE = 0 mA, f = 1 MHz
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Insertion Pow er Gain
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RF Characteristics
Note
MSG
D
Collector Cut-off Current
3
Gain 1 dB Compression Output
Pow er
O
Output 3rd Order Intercept Point
Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%
2. Collector to base capacitance when the emitter grounded
S21
S12
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3. MSG =
hFE CLASSIFICATION
2
Rank
FB
Marking
T1K
hFE Value
220 to 380
Data Sheet PU10414EJ04V0DS
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TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
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S-PARAMETERS
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Data Sheet PU10414EJ04V0DS
NESG3031M05
PACKAGE DIMENSIONS
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FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm)
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Data Sheet PU10414EJ04V0DS
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