DMG4435SSS-13 - Diodes Incorporated

DMG4435SSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(on) max
-30V
16m @ VGS = -20V
20m @ VGS = -10V
Features
ID
TA = +25°C
-7.3A
-6.0A
NEW PRODUCT
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
performance, making it ideal for high efficiency power management
Mechanical Data
applications.


Applications
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0

DC-DC Converters

Power management functions

Backlighting
SO-8

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram

Terminals: Finish  Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3

Weight: 0.074 grams (approximate)
S
D
S
D
S
D
G
D
Top View
Top View
Internal Schematic
D
G
S
Equivalent circuit
Ordering Information (Note 4)
Part Number
DMG4435SSS-13
Notes:
Case
SO-8
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
G4435SS
G4435SS
YY WW
YY WW
1
4
Chengdu A/T Site
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
= Manufacturer’s Marking
G4435SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
Shanghai A/T Site
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DMG4435SSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Drain-Source Voltage
Characteristic
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Steady State
TA = +25°C
TA = +70°C
ID
-7.3
-5.7
A
t < 10s
TA = +25°C
TA = +70°C
ID
-10
-7.5
A
IDM
-80
A
Symbol
Value
Unit
2.5
W
Continuous Drain Current (Note 5) VGS = -20
Pulsed Drain Current (Note 6)
NEW PRODUCT
Unit
Thermal Characteristics
Characteristic
TA = +25°C
Power Dissipation (Note 5)
PD
TA = +70°C
Steady state
t < 10s
Thermal Resistance, Junction to Ambient @TA = +25°C
Operating and Storage Temperature Range
1.5
W
RθJA
96.5
55
°C/W
°C/W
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-30
—
—
V
VGS = 0V, ID = -1mA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
-1.0
µA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±25V, VDS = 0V
VGS(th)
-1.0
-1.7
-2.5
V
VDS = VGS, ID = -250μA
13
16
15
20
21
29
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS (ON)
—
VGS = -20V, ID = -11A
mΩ
VGS = -10V, ID = -10A
VGS = -5V, ID = -5A
Forward Transfer Admittance
|Yfs|
—
22
—
S
VDS = -5V, ID = -10A
Diode Forward Voltage
VSD
—
-0.74
-1.0
V
VGS = 0V, IS = -1A
Input Capacitance
Ciss
—
1614
—
pF
Output Capacitance
Coss
—
226
—
pF
Reverse Transfer Capacitance
Crss
—
214
—
pF
Gate Resistance
Rg
—
6.8
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge at 10V
Qg
—
35.4
—
nC
VGS = -10V, VDS = -15V, ID = -10A
Total Gate Charge at 5V
Qg
—
18.9
—
nC
Gate-Source Charge
Qgs
—
4.6
—
nC
Gate-Drain Charge
Qgd
—
5.7
—
nC
Turn-On Delay Time
tD(on)
—
8.6
—
ns
Turn-On Rise Time
tr
—
12.7
—
ns
Turn-Off Delay Time
tD(off)
—
44.9
—
ns
tf
—
22.8
—
ns
DYNAMIC CHARACTERISTICS (Note 8)
Turn-Off Fall Time
Notes:
VDS = -15V, VGS = 0V,
f = 1.0MHz
VGS = -5V, VDS = -15V,
ID = -10A
VDS = -15V, VGS = -10V,
RL = 1.5Ω, RGEN = 3Ω,
5. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper, and the testing is based on the t<10s. The value in any given application depends on the
user’s specific board design.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
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© Diodes Incorporated
DMG4435SSS
30
30
VGS = -10V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -4.5V
20
VGS = -4.0V
15
VGS = -3.5V
VGS = -3.0V
10
5
20
15
10
TA = 150°C
T A = 125°C
5
TA = 85°C
TA = 25°C
VGS = -2.2V
0
VGS = -2.5V
0.5
1
1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0
2
0.05
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
0.04
0.03
VGS = -4.5V
0.02
VGS = -10V
0.01
0
0
5
10
15
20
25
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
TA = -55°C
0
0.5
1
1.5
2
2.5
3
3.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
0.06
0.05
VGS = -4.5V
0.04
T A = 150°C
TA = 125°C
0.03
TA = 85°C
TA = 25°C
0.02
TA = -55°C
0.01
0
0
5
10
15
20
25
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
0.04
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
VDS = -5V
25
25
1.4
VGS = -4.5V
ID = -10A
1.2
VGS = -10V
ID = -20A
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
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0.03
VGS = -4.5V
ID = -10A
0.02
VGS = -10V
ID = -20A
0.01
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
September 2013
© Diodes Incorporated
30
2.5
25
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
3.0
2.0
ID = -1mA
1.5
ID = -250µA
1.0
20
15
T A = 25°C
10
5
0.5
0
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000
0
0.2
0.4
0.6
0.8
1.0
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
10,000
f = 1MHz
-IDSS, LEAKAGE CURRENT (µA)
TA = 150°C
Ciss
1,000
Coss
Crss
100
10
0
5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
1,000
30
TA = 125°C
100
T A = 85°C
10
TA = 25°C
1
0.1
0
10
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
10
VGS(TH), GATE-THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMG4435SSS
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35 40
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Threshold Voltage vs. Total Gate Charge
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
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DMG4435SSS
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RJA(t) = r(t) * RJA
RJA = 98°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
D = Single Pulse
0.001
0.00001
t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
0.254
NEW PRODUCT
1
E1 E
A1
L
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0
8

All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
h
7°~9°
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
X
Y
C1
C2
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
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© Diodes Incorporated
DMG4435SSS
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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DMG4435SSS
Document number: DS32041 Rev. 5 - 2
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© Diodes Incorporated