DMP2066LSD - Diodes Incorporated

DMP2066LSD
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(on) max
40mΩ @ VGS = -4.5V
-20V
NEW PRODUCT
Features
70mΩ @ VGS = -2.5V
ID
TA = +25°C
•
Dual P-Channel MOSFET
•
Low On-Resistance
-5.8A
•
Low Gate Threshold Voltage
-4.4A
•
Low Input Capacitance
•
Fast Switching Speed
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(ON)) and yet maintain superior switching
•
Low Input/Output Leakage
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Applications
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
•
Backlighting
•
Power Management Functions
•
Moisture Sensitivity: Level 1 per J-STD-020
•
DC-DC Converters
•
Terminals Connections Indicator: See Diagram
•
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208 e3
•
Weight: 0.072 grams (approximate)
UL Flammability Classification Rating 94V-0
D1
SO-8
S1
D1
G1
D1
S2
D2
G2
D2
G1
G2
S1
TOP VIEW
Internal Schematic
TOP VIEW
P-Channel MOSFET
Ordering Information
S2
P-Channel MOSFET
(Note 4)
Part Number
DMP2066LSD-13
Notes:
D2
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
P2066LD
P2066LD
YY WW
YY WW
1
4
Chengdu A/T Site
DMP2066LSD
Document number: DS31453 Rev. 4 - 2
1
4
= Manufacturer’s Marking
P2066LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Shanghai A/T Site
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DMP2066LSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Drain-Source Voltage
Characteristic
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
ID
-5.8
-4.6
A
IDM
-20
A
Symbol
Value
Unit
PD
2.0
W
RθJA
62.5
°C/W
TJ, TSTG
-55 to +150
°C
NEW PRODUCT
Drain Current (Note 5)
Steady
State
TA = +25°C
TA = +70°C
Pulsed Drain Current (Note 6)
Units
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
-20
⎯
⎯
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-1
µA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±12V, VDS = 0V
VGS(th)
-0.6
-0.94
-1.2
V
VDS = VGS, ID = -250µA
⎯
29
55
40
70
mΩ
VGS = -4.5V, ID = -4.6A
VGS = -2.5V, ID = -3.8A
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS (ON)
⎯
Forward Transconductance
gfs
⎯
9
⎯
S
VDS = -10V, ID = -4.6A
Diode Forward Voltage (Note 7)
VSD
-0.5
-0.72
-1.4
V
VGS = 0V, IS = -2.1A
Input Capacitance
Ciss
⎯
820
⎯
pF
Output Capacitance
Coss
⎯
200
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
160
⎯
pF
Gate Resistance
RG
⎯
2.5
⎯
Ω
VDS = 0V, VGS = 0V
f = 1.0MHz
nC
VDS = -10V, VGS = -4.5V,
ID = -5.9A
ns
VDS = -10V, VGS = -4.5V,
ID = -1A, RG = 6.0Ω
DYNAMIC CHARACTERISTICS
VDS = -15V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
⎯
10.1
⎯
Gate-Source Charge
QGS
⎯
1.5
⎯
Gate-Drain Charge
QGD
⎯
4.3
⎯
Turn-On Delay Time
td(on)
⎯
4.4
⎯
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
5.
6.
7.
tr
⎯
9.9
⎯
td(off)
⎯
28.0
⎯
tf
⎯
23.4
⎯
Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.
Pulse width ≤10μS, Duty Cycle ≤1%.
Short duration pulse test used to minimize self-heating effect.
DMP2066LSD
Document number: DS31453 Rev. 4 - 2
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DMP2066LSD
30
20
VGS = 10V
VGS = 4.5V
VDS = 5.0V
16
ID , DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 3.0V
18
12
12
VGS = 2.5V
6
8
4
TA = 150°C
VGS = 2.0V
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
1
0.1
VGS = 2.5V
VGS = 4.5V
VGS = 10V
0.01
0
6
12
18
24
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0
30
1.6
VGS = 10V
ID = 10A
1.2
VGS = 4.5V
ID = 5A
1.0
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Normalized On-Resistance vs. Ambient Temperature
DMP2066LSD
Document number: DS31453 Rev. 4 - 2
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
0.08
VGS = 4.5V
0.06
TA = 150°C
TA = 125°C
0.04
TA = 85°C
TA = 25°C
TA = -55°C
0.02
0
0
6
12
18
24
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
2.4
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.4
TA = 25°C
TA = -55°C
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
T A = 85°C
TA = 125°C
VGS = 1.5V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
24
2.0
1.6
1.2
0.8
ID = 1mA
ID = 250µA
0.4
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
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DMP2066LSD
10,000
20
T A = 25°C
12
1,000
8
4
Ciss
Coss
Crss
0
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Diode Forward Voltage vs. Current
100
1.2
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Typical Total Capacitance
20
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
0.254
NEW PRODUCT
f = 1MHz
CT, TOTAL CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
16
E1 E
A1
L
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
GAUGE PLANE
SEATING PLANE
DETAIL A
h
7°~9°
45°
DETAIL A
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
X
Y
C1
C2
C1
Value (in mm)
0.60
1.55
5.4
1.27
C2
Y
DMP2066LSD
Document number: DS31453 Rev. 4 - 2
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© Diodes Incorporated
DMP2066LSD
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
DMP2066LSD
Document number: DS31453 Rev. 4 - 2
5 of 5
www.diodes.com
January 2014
© Diodes Incorporated