DMP2066LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max 40mΩ @ VGS = -4.5V -20V NEW PRODUCT Features 70mΩ @ VGS = -2.5V ID TA = +25°C • Dual P-Channel MOSFET • Low On-Resistance -5.8A • Low Gate Threshold Voltage -4.4A • Low Input Capacitance • Fast Switching Speed Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability performance, making it ideal for high efficiency power management applications. Mechanical Data Applications • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. • Backlighting • Power Management Functions • Moisture Sensitivity: Level 1 per J-STD-020 • DC-DC Converters • Terminals Connections Indicator: See Diagram • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 e3 • Weight: 0.072 grams (approximate) UL Flammability Classification Rating 94V-0 D1 SO-8 S1 D1 G1 D1 S2 D2 G2 D2 G1 G2 S1 TOP VIEW Internal Schematic TOP VIEW P-Channel MOSFET Ordering Information S2 P-Channel MOSFET (Note 4) Part Number DMP2066LSD-13 Notes: D2 Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 P2066LD P2066LD YY WW YY WW 1 4 Chengdu A/T Site DMP2066LSD Document number: DS31453 Rev. 4 - 2 1 4 = Manufacturer’s Marking P2066LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) Shanghai A/T Site 1 of 5 www.diodes.com January 2014 © Diodes Incorporated DMP2066LSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS -20 V Gate-Source Voltage VGSS ±12 V ID -5.8 -4.6 A IDM -20 A Symbol Value Unit PD 2.0 W RθJA 62.5 °C/W TJ, TSTG -55 to +150 °C NEW PRODUCT Drain Current (Note 5) Steady State TA = +25°C TA = +70°C Pulsed Drain Current (Note 6) Units Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 µA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±12V, VDS = 0V VGS(th) -0.6 -0.94 -1.2 V VDS = VGS, ID = -250µA ⎯ 29 55 40 70 mΩ VGS = -4.5V, ID = -4.6A VGS = -2.5V, ID = -3.8A ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) ⎯ Forward Transconductance gfs ⎯ 9 ⎯ S VDS = -10V, ID = -4.6A Diode Forward Voltage (Note 7) VSD -0.5 -0.72 -1.4 V VGS = 0V, IS = -2.1A Input Capacitance Ciss ⎯ 820 ⎯ pF Output Capacitance Coss ⎯ 200 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 160 ⎯ pF Gate Resistance RG ⎯ 2.5 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz nC VDS = -10V, VGS = -4.5V, ID = -5.9A ns VDS = -10V, VGS = -4.5V, ID = -1A, RG = 6.0Ω DYNAMIC CHARACTERISTICS VDS = -15V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Total Gate Charge QG ⎯ 10.1 ⎯ Gate-Source Charge QGS ⎯ 1.5 ⎯ Gate-Drain Charge QGD ⎯ 4.3 ⎯ Turn-On Delay Time td(on) ⎯ 4.4 ⎯ Rise Time Turn-Off Delay Time Fall Time Notes: 5. 6. 7. tr ⎯ 9.9 ⎯ td(off) ⎯ 28.0 ⎯ tf ⎯ 23.4 ⎯ Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB. Pulse width ≤10μS, Duty Cycle ≤1%. Short duration pulse test used to minimize self-heating effect. DMP2066LSD Document number: DS31453 Rev. 4 - 2 2 of 5 www.diodes.com January 2014 © Diodes Incorporated DMP2066LSD 30 20 VGS = 10V VGS = 4.5V VDS = 5.0V 16 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V 18 12 12 VGS = 2.5V 6 8 4 TA = 150°C VGS = 2.0V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 1 0.1 VGS = 2.5V VGS = 4.5V VGS = 10V 0.01 0 6 12 18 24 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 30 1.6 VGS = 10V ID = 10A 1.2 VGS = 4.5V ID = 5A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Normalized On-Resistance vs. Ambient Temperature DMP2066LSD Document number: DS31453 Rev. 4 - 2 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 0.08 VGS = 4.5V 0.06 TA = 150°C TA = 125°C 0.04 TA = 85°C TA = 25°C TA = -55°C 0.02 0 0 6 12 18 24 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 2.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.4 TA = 25°C TA = -55°C 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 T A = 85°C TA = 125°C VGS = 1.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 24 2.0 1.6 1.2 0.8 ID = 1mA ID = 250µA 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature 3 of 5 www.diodes.com January 2014 © Diodes Incorporated DMP2066LSD 10,000 20 T A = 25°C 12 1,000 8 4 Ciss Coss Crss 0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current 100 1.2 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Total Capacitance 20 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 NEW PRODUCT f = 1MHz CT, TOTAL CAPACITANCE (pF) IS, SOURCE CURRENT (A) 16 E1 E A1 L SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm GAUGE PLANE SEATING PLANE DETAIL A h 7°~9° 45° DETAIL A A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMP2066LSD Document number: DS31453 Rev. 4 - 2 4 of 5 www.diodes.com January 2014 © Diodes Incorporated DMP2066LSD IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com DMP2066LSD Document number: DS31453 Rev. 4 - 2 5 of 5 www.diodes.com January 2014 © Diodes Incorporated