DMP3036SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(on) max -30V 20mΩ @ VGS = -10V 29mΩ @ VGS = -5V ID TC = +25°C -19.5A -16.2A NEW PRODUCT Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data making it ideal for high efficiency power management applications. Applications Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram Below Backlighting Weight: 0.076 grams (Approximate) SO-8 SO-8 Pin1 SO-8 D S D S D S D G D Top View Pin Configuration Top View G S Equivalent Circuit Ordering Information (Note 4) Part Number DMP3036SSS-13 Notes: Case SO-8 Packaging 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information SO-8 8 5 = Manufacturer’s Marking P3036SS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) P 3036SS YY WW 1 DMP3036SSS Document number: DS36460 Rev. 3 - 2 4 1 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP3036SSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TC = +25°C TC = +70°C TA = +25°C TA = +70°C NEW PRODUCT Continuous Drain Current (Note 5) VGS = -10V ID Unit V V A -11.4 -9.2 -80 -3.6 -17.5 64 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.3mH Avalanche Energy (Note 7) L = 0.3mH Value -30 ±25 -19.5 -15.6 IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) PD TA = +70°C Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) RJA TA = +25°C TA = +70°C Steady State t<10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics RθJC TJ, TSTG Value 1.4 Units W 0.9 88 37 1.9 °C/W 1.2 65 32 11 -55 to +150 °C/W W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1.0 ±100 V μA nA VGS = 0V, ID = -1mA VDS = -30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(th) RDS (ON) -3.0 20 29 -1.0 mΩ VSD -1.7 16 22 -0.7 V Static Drain-Source On-Resistance -1.0 - VDS = VGS, ID = -250μA VGS = -10V, ID = -9A VGS = -5V, ID = -7A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1931 226 168 10.9 8.8 16.5 2.6 3.6 8.2 14 65 31.6 - pF pF pF Ω nC nC nC nC ns ns ns ns Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at (VGS = -5V) Total Gate Charge at (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -10A VDS = -15V, ID = -10A VGEN = -10V, VDD = -15V, RGEN = 3Ω, ID = -10A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP3036SSS Document number: DS36460 Rev. 3 - 2 2 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP3036SSS 30 30 VGS = -4.0V VDS = 5.0V VGS = -3.5V 20 VGS = -5.0V VGS = -10.0V 15 VGS = -3.0V 10 ID, DRAIN CURRENT (A) Id , DRAIN CURRENT (A) 25 VGS = -4.5V T A =150°C 20 TA = 125°C 15 T A = 85°C 10 T A = 25°C 5 5 VGS = -2.0V VGS = -2.5V 1 2 3 4 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 5 R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) 0.03 0.028 0.026 0.024 0.022 0.02 VGS = 5.0V 0.018 0.016 0.014 VGS = 10.0V 0.012 0.01 VGS = 20.0V 0.008 0.006 0.004 0.002 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 2 3 4 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.1 0.09 I D = -10.0A 0.08 0.07 I D = -11.0A 0.06 0.05 0.04 0.03 0.02 0.01 30 I D = -5.0A 0 0 0.04 5 10 15 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 25 1.6 0.035 VGS = 4.5V 0.03 T A = 150°C 0.025 TA = 125°C 0.02 T A = 85°C T A = 25°C 0.015 T A = -55°C 0.01 0.005 R DS(ON), DRAI N-SO URCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) 0 T A = -55°C 0 0 0 RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( Ω) NEW PRODUCT 25 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP3036SSS Document number: DS36460 Rev. 3 - 2 30 VGS = -20.0V 1.4 I D = -10.0A VGS = -5.0V I D = -3.0A 1.2 VGS = -10.0V I D = -5.0A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP3036SSS 2.5 VGS(th), GATE THRESHOLD VOLTAG E (V) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( Ω) 0.025 VGS = -5.0V I D = -3.0A 0.02 VGS = -10.0V I D = -5.0A 0.015 VGS = -20.0V I D = -10.0A 0.01 0.005 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 2.3 2.1 I D = 1mA 1.9 1.7 1.5 I D = 250µA 1.3 1.1 0.9 0.7 0.5 -50 0 -50 30 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 T A = 150°C IS, SOURCE CURRENT (A) ID SS, DRAIN LEAKAGE CURRENT (nA) T A = 150°C 25 TA = 125°C 20 TA = 85°C 15 10 TA = 25°C 5 T A = -55°C 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1000 T A = 125°C 100 T A = 85°C 10 T A = 25°C 1 0.1 1.5 0 5 10 15 20 25 30 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Drain-Source Leakage Current vs. Voltage 10 10000 V GS GATE THRESHOLD VOLTAGE (V) f = 1MHz CT, JUNCTION CAPACI TANCE (pF) NEW PRODUCT 0.03 Ciss 1000 Coss C rss 100 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Junction Capacitance DMP3036SSS Document number: DS36460 Rev. 3 - 2 30 VDS = -15V 8 I D = -10A 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 Qg, TOTAL GATE CHARGE (nC) Figure 12 Gate Charge 4 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP3036SSS r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja (t) = r(t) * Rthja Rthja = 88°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 NEW PRODUCT 1 E1 E A1 L SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMP3036SSS Document number: DS36460 Rev. 3 - 2 5 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP3036SSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMP3036SSS Document number: DS36460 Rev. 3 - 2 6 of 6 www.diodes.com April 2015 © Diodes Incorporated