ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET ADVANCE INFORMATION Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance Nominal load current (VIN = 5V) 500mΩ 1.3A Low Input Current Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protection with Auto Restart Over Voltage Protection (active clamp) Description Thermal Shutdown with Auto Restart Over-Current Protection The ZXMS6004DGQ is a self protected low side MOSFET with logic Input Protection (ESD) level input. It integrates over-temperature, over-current, over-voltage High Continuous Current Rating (active clamp) and ESD protected logic level functionality. The Lead-Free Finish; RoHS compliant (Note 1 & 2) ZXMS6004DGQ is ideal as a general purpose switch driven from Halogen and Antimony Free. “Green” Device (Note 3) 3.3V or 5V microcontrollers in harsh environments where standard Qualified to AEC-Q101 Standards for High Reliability MOSFETs are not rugged enough. PPAP Capable (Note 4) Applications Mechanical Data Especially suited for loads with a high in-rush current such as lamps and motors Case Material: Molded Plastic, “Green” Molding Compound All types of resistive, inductive and capacitive loads in switching UL Flammability Classification Rating 94V-0 Case: SOT-223 applications Moisture Sensitivity: Level 1 per J-STD-020 μC compatible power switch for 12V and 24V DC applications. Terminals: Matte Tin Finish Automotive rated Weight: 0.112 grams (approximate) Replaces electromechanical relays and discrete circuits Linear Mode capability - the current-limiting protection circuitry is SOT-223 designed to de-activate at low VDS to minimize on state power dissipation. The maximum DC operating current is therefore S determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS. D D IN Top view Pin Out Top View Ordering Information Product ZXMS6004DGQTA Notes: Marking ZXMS6004D Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 3,000 units 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information ZXMS 6004D ZXMS6004D = Product type Marking Code IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DGQ Document number: DS33608 Rev. 1 - 2 1 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DGQ ADVANCE INFORMATION Functional Block Diagram Absolute Maximum Ratings (@Tamb = +25°C, unless otherwise stated.) Characteristic Continuous Drain-Source Voltage Drain-Source Voltage for Short Circuit Protection Continuous Input Voltage Continuous Input Current @-0.2V ≤ VIN ≤ 6V Continuous Input Current @VIN < -0.2V or VIN > 6V Pulsed Drain Current @VIN = 3.3V Pulsed Drain Current @VIN = 5V Continuous Source Current (Body Diode) (Note 6) Pulsed Source Current (Body Diode) Unclamped Single Pulse Inductive Energy, TJ = +25°C, ID = 0.5A, VDD = 24V Electrostatic Discharge (Human Body Model) Charged Device Model Symbol VDS VDS(SC) VIN Units V V V IDM IDM IS ISM Value 60 36 -0.5 to +6 No limit │IIN │≤2 2 2.5 1 5 EAS 490 mJ VESD VCDM 4000 1000 V V Symbol Value 1.3 10.4 3.0 24 96 42 12 -40 to +150 -55 to +150 Units W mW/°C W mW/°C °C/W °C/W °C/W °C °C IIN mA A A A A Thermal Resistance Characteristic Power Dissipation at Tamb = +25°C (Note 6) Linear Derating Factor Power Dissipation at Tamb = +25°C (Note 7) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 8) Operating Temperature Range Storage Temperature Range Notes: PD PD RθJA RθJA RθJC TJ’ TSTG 6. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. 7. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. 8. Thermal resistance between junction and the mounting surfaces of drain and source pins. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DGQ Document number: DS33608 Rev. 1 - 2 2 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DGQ Recommended Operating Conditions ADVANCE INFORMATION The ZXMS6004DGQ is optimized for use with μC operating from 3.3V and 5V supplies. Characteristic Input Voltage Range Ambient Temperature Range High Level Input Voltage for MOSFET to be on Low level input voltage for MOSFET to be off Peripheral Supply Voltage (voltage to which load is referred) Symbol VIN TA VIH VIL VP Min 0 -40 3 0 0 Max 5.5 +125 5.5 0.7 36 Unit V °C V V V Thermal Characteristics IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DGQ Document number: DS33608 Rev. 1 - 2 3 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DGQ ADVANCE INFORMATION Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.) Characteristic Static Characteristics Drain-Source Clamp Voltage Symbol Min Typ Max Unit VDS(AZ) 60 – 65 – 70 V 0.5 – – 1 0.7 – 1 1.5 60 100 200 – 120 – – 400 600 – 0.9 350 – 500 – 1.0 – – 1.2 – – 1.3 – – 0.7 1.7 – 1 2.2 – td(on) tr td(off) ff – – – – 5 10 45 15 – – – – TJT 150 175 – °C – 10 – °C Off State Drain Current IDSS Input Threshold Voltage VIN(th) Input Current IIN Input Current While Over Temperature Active – Static Drain-Source On-State Resistance RDS(on) Continuous Drain Current (Note 6) ID Continuous Drain Current (Note 7) Current Limit (Note 9) Dynamic Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Over-Temperature Protection Thermal Overload Trip Temperature (Note 10) Thermal Hysteresis (Note 10) Notes: ID(LIM) – 400 μA V μA μA mΩ A A μs Test Condition = 10mA = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 0.5A VIN = +5V, ID = 0.5A VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C VIN = +3V VIN = +5V ID VDS VDD = 12V, ID = 0.5A, VGS = 5V – – 9. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 10. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DGQ Document number: DS33608 Rev. 1 - 2 4 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DGQ ADVANCE INFORMATION Typical Characteristics IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DGQ Document number: DS33608 Rev. 1 - 2 5 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DGQ ADVANCE INFORMATION Typical Characteristics - Continued IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DGQ Document number: DS33608 Rev. 1 - 2 6 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DGQ Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D Q b1 C E SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm E1 Gauge Plane 0.25 Seating Plane e1 b 0° -1 0° e A1 7° 7° A L Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions X1 X2 Y1 Y2 C1 C2 Y1 C1 Y2 X2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DGQ Document number: DS33608 Rev. 1 - 2 7 of 8 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DGQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DGQ Document number: DS33608 Rev. 1 - 2 8 of 8 www.diodes.com April 2014 © Diodes Incorporated