DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI NEW PRODUCT NEW PRODUCT INFORMATION ADVANCE Product Summary V(BR)DSS Features and Benefits ID RDS(ON) max TA = +25°C 12m @ VGS = 10V 10.8A 16m @ VGS = 4.5V 9.5A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: POWERDI5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) DC-DC Converters Power Management Functions Analog Switch D POWERDI5060-8 Pin1 G S D S D S D G D S Top View Top View Pin Configuration Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMN3016LPS-13 Notes: Case POWERDI5060-8 Packaging 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer’s Marking N3016LP = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) N3016LP YY WW S S S G POWERDI is a registered trademark of Diodes Incorporated. 1 of 7 DMN3016LPS Document number: DS35646 Rev. 2 - 2 www.diodes.com February 2015 © Diodes Incorporated DMN3016LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT NEW PRODUCT INFORMATION ADVANCE Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s ID Value 30 ±20 10.8 8.5 ID 15.5 12.3 A ID 9.5 7.5 A ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH IDM IAS EAS Units V V A 13.5 10.8 70 22 24 A A mJ Value 1.18 109 49 2.75 46 24 4.5 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) RθJA Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics RθJA RθJC TJ, TSTG (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) 2.0 12 16 1.0 mΩ VSD 8.5 10.5 0.7 V Static Drain-Source On-Resistance 1.4 - VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR Qrr - 1415 119 82 3.0 11.3 25.1 3.5 3.6 4.8 16.5 26.1 5.6 12.3 10.4 - pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 15V, ID = 12A VDD = 15V, VGS = 10V, RL = 1.25Ω, RG = 3Ω IF = 12A, di/dt = 500A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMN3016LPS Document number: DS35646 Rev. 2 - 2 www.diodes.com February 2015 © Diodes Incorporated DMN3016LPS 30.0 30 VGS = 3.5V VGS = 4.0V VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS= 5.0V 25 20.0 VGS = 4.5V 15.0 VGS = 10.0V 10.0 5.0 15 TA = 150oC 10 TA = 125oC TA = 25oC TA = 85oC TA = -55oC VGS = 2.2V 0 20 5 VGS = 2.5V 0.0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure1 Typical Output Characteristic 0 2 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristic 4 0.03 0.03 VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.025 0.02 VGS = 4.5V 0.01 VGS = 10V TA = 150oC TA = 125oC 0.02 0.015 TA = 85oC 0.01 TA = 25oC TA = -55oC 0.005 0 0 0 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs Drain Current and Temperature 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs Drain Current and Gate Voltage 1.8 0.024 1.6 0.02 RDS(ON), DRAIN-SOURCE ON-ESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT NEW PRODUCT INFORMATION ADVANCE 25.0 1.4 VGS = 4.5V, ID =5A 1.2 VGS = 10V, ID =10A 1 0.8 0.016 5 VGS = 4.5V, ID =5A 0.012 0.008 VGS = 10V, ID =10A 0.004 0 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 5 On-Resistance Variation with Temperature 150 POWERDI is a registered trademark of Diodes Incorporated. 3 of 7 DMN3016LPS Document number: DS35646 Rev. 2 - 2 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6 On-Resistance Variation with Temperature February 2015 © Diodes Incorporated 30 2.5 25 IS, SOURCE CURRENT (A) VGS(TH), GATE THESHOLD VOLTAGE (V) 3 2 ID = 1mA 1.5 1 ID = 250µA 0.5 20 15 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7 Gate Theshold Variation vs Junction Temperature 0 10000 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs Current 10 f=1MHz 9 8 7 1000 Ciss VGS (V) CT, JUNCTION CAPACITANCE (pF) VGS = 0V, TA = 25oC 10 5 0 Coss VDS = 15V, ID =12A 6 5 4 100 3 Crss 2 1 10 0 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 20 0 5 10 15 20 25 Qg (nC) Figure 10 Gate Charge 100 RDS(ON) Limited ID, DRAIN CURRENT (A) NEW PRODUCT NEW PRODUCT INFORMATION ADVANCE DMN3016LPS 10 DC 1 PW =10s PW =1s 0.1 0.01 PW =100ms TJ(Max)=150℃ PW =10ms TA=25℃ VGS=10V PW =1ms Single Pulse PW =100µs DUT on 1*MRP Board 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. 4 of 7 DMN3016LPS Document number: DS35646 Rev. 2 - 2 www.diodes.com February 2015 © Diodes Incorporated DMN3016LPS 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT NEW PRODUCT INFORMATION ADVANCE D=0.9 D=0.7 D=0.5 0.1 D=0.3 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA(t)=r(t) * RθJA RθJA=117℃/W Duty Cycle, D=t1/t2 D=0.005 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance POWERDI is a registered trademark of Diodes Incorporated. 5 of 7 DMN3016LPS Document number: DS35646 Rev. 2 - 2 www.diodes.com February 2015 © Diodes Incorporated DMN3016LPS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. NEW PRODUCT NEW PRODUCT INFORMATION ADVANCE (1) Package Type: POWERDI®5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G POWERDI®5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (1) Package Type: POWERDI®5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X G Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 Y(4x) POWERDI is a registered trademark of Diodes Incorporated. 6 of 7 DMN3016LPS Document number: DS35646 Rev. 2 - 2 Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 www.diodes.com February 2015 © Diodes Incorporated DMN3016LPS IMPORTANT NOTICE NEW PRODUCT NEW PRODUCT INFORMATION ADVANCE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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