DMN4008LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Features and Benefits V(BR)DSS RDS(ON) max 40V 7.5mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V ID max TA = +25°C 14.4A 12.5A • Power Management Functions • DC-DC Converters Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data ideal for high efficiency power management applications. Backlighting Low RDS(ON) – ensures on state losses are minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • • • • Description and Applications • • ® Case: POWERDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.072 grams (approximate) ® POWERDI 3333-8 S D Pin 1 S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN4008LFG-7 DMN4008LFG-13 Notes: Case ® POWERDI 3333-8 ® POWERDI 3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION NEW PRODUCT Product Summary N47= Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 13 = 2013) WW = Week code (01 ~ 53) N47 POWERDI is a registered trademark of Diodes Incorporated DMN4008LFG Document number: DS36908 Rev. 2 - 2 1 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN4008LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCE INFORMATION NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Value 40 ±20 14.4 11.6 ID A 19.2 15.4 90 3 38 75 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Value 1.0 119 66 2.3 53 30 6.1 -55 to +150 RθJA Total Power Dissipation (Note 6) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) 3 7.5 10 20 1.1 mΩ VSD — 5.5 7 — 0.7 V Static Drain-Source On-Resistance 1 — — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 10A VGS = 4.5V, ID = 8A VGS = 3.3V, ID = 6A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 3537 257 215 0.9 34 74 10.2 12.5 8.2 14.1 69.7 24.4 18.5 12.0 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns nS nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: V Test Condition VDS = 20V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 20V, ID = 10A VGS = 10V, VDS = 20V, RG = 6Ω, ID = 10A IF = 10A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated DMN4008LFG Document number: DS36908 Rev. 2 - 2 2 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN4008LFG 30.0 27.0 24 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.0V 21.0 VGS = 3.5V 18.0 15.0 12.0 9.0 21 18 TA = 85°C 9 TA = 25°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.012 VGS = 3.3V 0.01 VGS = 4.5V VGS = 10V 0.006 0.004 0.002 0 0.011 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics ID = 10.0A 0.035 ID = 8.0A 0.03 0.025 0.02 0.015 0.01 0.005 20 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics TA = 150°C TA = 125°C 0.008 TA = 85°C 0.007 0.006 TA = 25°C 0.005 0.004 TA = -55°C 0.003 2 4 20 1.8 0.009 0 1 0.04 VGS = 10V 0.01 0.002 0 5 0.014 0.008 TA = -55°C 3 VGS = 2.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA = 125°C 12 6 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA = 150°C 15 6.0 0.0 VDS = 5.0V 27 VGS = 4.5V 24.0 ADVANCE INFORMATION NEW PRODUCT 30 VGS = 10V 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 20 VGS = 10V ID = 10A 1.6 VGS = 4.5V ID = 8.0A 1.4 VGS = 3.3V ID = 6.0A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated DMN4008LFG Document number: DS36908 Rev. 2 - 2 3 of 6 www.diodes.com July 2014 © Diodes Incorporated 0.016 0.014 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.2 0.018 VGS = 3.3V ID = 6.0A 0.012 VGS = 4.5V ID = 8.0A 0.01 0.008 0.006 VGS = 10V ID = 10A 0.004 0.002 0 -50 ID = 1mA 1.8 1.6 ID = 250µA 1.4 1.2 1 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) 27 24 21 TA = 150°C 18 TA = 125°C 15 TA = 25°C 9 C iss 1000 T A = 85°C 12 T A = -55°C 6 C oss 3 0 C rss 0 100 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current f = 1MHz 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 1000 10 RDS(ON) Limited VDS = 20V ID = 10A 8 ID, DRAIN CURRENT (A) 100 6 4 2 0 150 10000 30 IS, SOURCE CURRENT (A) 2 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION NEW PRODUCT DMN4008LFG 10 DC 10 20 30 40 50 60 70 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge 80 PW = 1s PW = 100ms 0.1 0 PW = 10s 1 TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 10ms PW = 1ms PW = 100µs 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated DMN4008LFG Document number: DS36908 Rev. 2 - 2 4 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN4008LFG r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 118°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ® A POWERDI 3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A3 A1 D D2 1 Pin 1 ID L (4x) 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G Y2 8 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated DMN4008LFG Document number: DS36908 Rev. 2 - 2 5 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN4008LFG ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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