DMN10H120SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI RDS(ON) max ID max TA = +25°C • • 110mΩ @ VGS = 10V 3.8 A • 122mΩ @ VGS = 6.0V 3.6 A • • • V(BR)DSS 100V Features and Benefits Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications • • • • • • Power Management Functions DC-DC Converters • Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) POWERDI3333-8 Pin 1 S S S G D D 1 8 2 7 3 6 4 5 D Top View Internal Schematic D Top View Bottom View Ordering Information (Note 4) Part Number DMN10H120SFG-7 DMN10H120SFG-13 Notes: Compliance Standard Standard Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YY W W ADVANCE INFORMATION Product Summary N10 N10 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 13 = 2013) WW = Week code (01 ~ 53) POWERDI is a registered trademark of Diodes Incorporated DMN10H120SFG Document number: DS36250 Rev. 2 - 2 1 of 6 www.diodes.com August 2014 © Diodes Incorporated DMN10H120SFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s Continuous Drain Current (Note 6) VGS = 6V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 100 ±20 3.8 3.0 ID 5.3 4.2 A ID 3.6 2.9 A A 5.0 4.0 20 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Units V V IDM A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 1.0 0.6 131 76 2.4 1.5 52 27 6.9 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250 μA VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 2.0 68 75 13 0.78 3.0 110 122 - V Static Drain-Source On-Resistance 1.5 - VDS = VGS, ID = 250μA VGS = 10V, ID = 3.3A VGS = 6.0V, ID = 3.0A VDS = 10V, ID = 3.3A VGS = 0V, IS = 3.2A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 549 41.1 19.0 1.6 10.6 5.2 2.3 2.6 3.8 1.8 11.5 2.5 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 10V Total Gate Charge VGS = 4.5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 50V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 50V, ID = 3.3A VGS = 10V, VDS = 50V, RG = 6.0Ω, ID = 3.3A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated DMN10H120SFG Document number: DS36250 Rev. 2 - 2 2 of 6 www.diodes.com August 2014 © Diodes Incorporated DMN10H120SFG 20.0 10 VDS = 5.0V 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 9 VGS = 5.0V VGS = 8.0V 16.0 VGS = 6.0V 12.0 VGS = 4.5V 8.0 4.0 7 6 TA = 150°C 5 TA = 125°C 4 TA = 85°C 3 TA = 25°C 2 VGS = 4.0V TA = -55°C 1 VGS = 3.5V 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 1 3 0.1 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 0.09 ID = 3.3A 0.4 0.08 VGS = 6.0V 0.3 0.07 VGS = 10V 0.2 0.06 0.1 0.05 0.04 1 0.20 2 3 4 5 6 7 8 9 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 10 ID = 3.0A 0 8 10 12 14 16 18 6 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 2 4 20 3 VGS = 10V 0.18 0.16 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION VGS = 10V TA = 150°C 0.14 TA = 125°C 0.12 TA = 85°C 0.10 0.08 TA = 25°C 0.06 TA = -55°C 0.04 0.02 0.00 2.5 VGS = 10V ID = 5A 2 1.5 VGS = 5.0V ID = 1A 1 0.5 0 0 1 2 3 4 5 6 7 8 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 9 10 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated DMN10H120SFG Document number: DS36250 Rev. 2 - 2 3 of 6 www.diodes.com August 2014 © Diodes Incorporated DMN10H120SFG 3.5 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.18 VGS = 5V ID = 1A 0.12 0.09 VGS = 10 V ID = 5A 0.06 0.03 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 3 ID = 1mA ID = 250µA 2.5 2 1.5 1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 1000 10 Ciss CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 9 8 7 6 TA = 150°C 5 100 TA = 125°C TA = 85°C 4 TA = 25°C 3 TA = -55°C 2 Coss Crss 1 0 0 f = 1MHz 10 0.3 0.6 0.9 1.2 1.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 10 100 VDS = 50V ID = 3.3A 8 5 10 15 20 25 30 35 40 45 50 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance RDS(on) Limited 10 -ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION 0.15 6 4 2 DC PW = 10s 1 PW = 1s PW = 100ms PW = 60ms 0.1 PW = 20ms PW = 10ms PW = 1ms 0.01 TJ(max) = 150°C PW = 100µs TA = 25°C Single Pulse DUT on 1 * MRP Board 0 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge 12 0.001 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 1000 POWERDI is a registered trademark of Diodes Incorporated DMN10H120SFG Document number: DS36250 Rev. 2 - 2 4 of 6 www.diodes.com August 2014 © Diodes Incorporated DMN10H120SFG RDS(on) Limited 10 -ID, DRAIN CURRENT (A) DC 1 PW = 10s PW = 1s PW = 100ms PW = 60ms PW = 20ms PW = 10ms PW = 1ms 0.1 PW = 100µs 0.01 T J(max) = 150°C TA = 60°C Single Pulse DUT on 1 * MRP Board 0.001 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13 SOA, Safe Operation Area 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 100 1000 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 52°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.1 1 10 0.01 t1, PULSE DURATION TIME (sec) Figure 14 Transient Thermal Resistance 0.001 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 A1 D D2 L (4x) Pin 1 ID 1 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm POWERDI is a registered trademark of Diodes Incorporated DMN10H120SFG Document number: DS36250 Rev. 2 - 2 5 of 6 www.diodes.com August 2014 © Diodes Incorporated DMN10H120SFG Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. ADVANCE INFORMATION X G 8 Y2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 5 G1 Y1 Y 1 4 Y3 X2 C Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated DMN10H120SFG Document number: DS36250 Rev. 2 - 2 6 of 6 www.diodes.com August 2014 © Diodes Incorporated