DMN10H120SFG-7 - Diodes Incorporated

DMN10H120SFG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
®
POWERDI
RDS(ON) max
ID max
TA = +25°C
•
•
110mΩ @ VGS = 10V
3.8 A
•
122mΩ @ VGS = 6.0V
3.6 A
•
•
•
V(BR)DSS
100V
Features and Benefits
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
•
•
•
•
•
•
Power Management Functions
DC-DC Converters
•
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish  Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
POWERDI3333-8
Pin 1
S
S
S
G
D
D
1
8
2
7
3
6
4
5
D
Top View
Internal Schematic
D
Top View
Bottom View
Ordering Information (Note 4)
Part Number
DMN10H120SFG-7
DMN10H120SFG-13
Notes:
Compliance
Standard
Standard
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YY W W
ADVANCE INFORMATION
Product Summary
N10
N10 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated
DMN10H120SFG
Document number: DS36250 Rev. 2 - 2
1 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMN10H120SFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = 6V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
ID
Value
100
±20
3.8
3.0
ID
5.3
4.2
A
ID
3.6
2.9
A
A
5.0
4.0
20
ID
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Units
V
V
IDM
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Value
1.0
0.6
131
76
2.4
1.5
52
27
6.9
-55 to +150
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
100
-
-
1.0
±100
V
μA
nA
VGS = 0V, ID = 250 μA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
2.0
68
75
13
0.78
3.0
110
122
-
V
Static Drain-Source On-Resistance
1.5
-
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.3A
VGS = 6.0V, ID = 3.0A
VDS = 10V, ID = 3.3A
VGS = 0V, IS = 3.2A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
549
41.1
19.0
1.6
10.6
5.2
2.3
2.6
3.8
1.8
11.5
2.5
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 50V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 50V, ID = 3.3A
VGS = 10V, VDS = 50V,
RG = 6.0Ω, ID = 3.3A
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMN10H120SFG
Document number: DS36250 Rev. 2 - 2
2 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMN10H120SFG
20.0
10
VDS = 5.0V
8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
9
VGS = 5.0V
VGS = 8.0V
16.0
VGS = 6.0V
12.0
VGS = 4.5V
8.0
4.0
7
6
TA = 150°C
5
TA = 125°C
4
TA = 85°C
3
TA = 25°C
2
VGS = 4.0V
TA = -55°C
1
VGS = 3.5V
0.0
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1
3
0.1
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.5
0.09
ID = 3.3A
0.4
0.08
VGS = 6.0V
0.3
0.07
VGS = 10V
0.2
0.06
0.1
0.05
0.04
1
0.20
2
3
4
5
6
7
8
9
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
ID = 3.0A
0
8
10 12 14 16 18
6
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
2
4
20
3
VGS = 10V
0.18
0.16
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ADVANCE INFORMATION
VGS = 10V
TA = 150°C
0.14
TA = 125°C
0.12
TA = 85°C
0.10
0.08
TA = 25°C
0.06
TA = -55°C
0.04
0.02
0.00
2.5
VGS = 10V
ID = 5A
2
1.5
VGS = 5.0V
ID = 1A
1
0.5
0
0
1
2
3
4
5
6
7
8
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
9
10
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( °C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated
DMN10H120SFG
Document number: DS36250 Rev. 2 - 2
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www.diodes.com
August 2014
© Diodes Incorporated
DMN10H120SFG
3.5
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.18
VGS = 5V
ID = 1A
0.12
0.09
VGS = 10 V
ID = 5A
0.06
0.03
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
3
ID = 1mA
ID = 250µA
2.5
2
1.5
1
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( °C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1000
10
Ciss
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
9
8
7
6
TA = 150°C
5
100
TA = 125°C
TA = 85°C
4
TA = 25°C
3
TA = -55°C
2
Coss
Crss
1
0
0
f = 1MHz
10
0.3
0.6
0.9
1.2
1.5
V SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0
10
100
VDS = 50V
ID = 3.3A
8
5
10 15 20 25 30 35 40 45 50
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
RDS(on)
Limited
10
-ID, DRAIN CURRENT (A)
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
0.15
6
4
2
DC
PW = 10s
1
PW = 1s
PW = 100ms
PW = 60ms
0.1
PW = 20ms
PW = 10ms
PW = 1ms
0.01 TJ(max) = 150°C
PW = 100µs
TA = 25°C
Single Pulse
DUT on 1 * MRP Board
0
0
2
4
6
8
10
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
12
0.001
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
1000
POWERDI is a registered trademark of Diodes Incorporated
DMN10H120SFG
Document number: DS36250 Rev. 2 - 2
4 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMN10H120SFG
RDS(on)
Limited
10
-ID, DRAIN CURRENT (A)
DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 60ms
PW = 20ms
PW = 10ms
PW = 1ms
0.1
PW = 100µs
0.01 T
J(max) = 150°C
TA = 60°C
Single Pulse
DUT
on 1 * MRP Board
0.001
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
1
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
100
1000
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 52°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.1
1
10
0.01
t1, PULSE DURATION TIME (sec)
Figure 14 Transient Thermal Resistance
0.001
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A3
A1
D
D2
L
(4x)
Pin 1 ID
1
4
b2
(4x)
E
E2
8
Z (4x)
5
e
L1
(3x)
b (8x)
POWERDI3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
POWERDI is a registered trademark of Diodes Incorporated
DMN10H120SFG
Document number: DS36250 Rev. 2 - 2
5 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMN10H120SFG
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
ADVANCE INFORMATION
X
G
8
Y2
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
5
G1
Y1
Y
1
4
Y3
X2
C
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated
DMN10H120SFG
Document number: DS36250 Rev. 2 - 2
6 of 6
www.diodes.com
August 2014
© Diodes Incorporated