BCP018B

BCP018B
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 180µm)
The BeRex BCP018B is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 180 micron
gate width making the product ideally suited for amplifier applications where high-gain and medium
power from DC to 26 GHz. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP018B is produced using state of the art metallization with SI3N4 passivation and is
screened to assure reliability.
PRODUCT FEATURES
• 23.0 dBm Typical Output Power @ 12 GHz
• 14.5 dB Typical Gain @ 12 GHz
• 0.25 X 180 Micron Recessed Gate
• RoHS Compliant; Lead-free
APPLICATIONS
• Commercial
• Military / Hi-Rel.
• Test & Measurement
DC CHARACTERISTICS Ta = 25° C
PARAMETER/TEST CONDITIONS
IDSS
Saturated Drain Current (Vgs = 0V, Vds = 2.0V)
Gm
Transconductance (Vds = 3V, Vgs = 50% Idss)
VP
Pinch-off Voltage (Ids = 0.18 mA, Vds = 2 V)
MIN.
TYPICAL
MAX.
UNIT
45
65
85
mA
-2.5
65
mS
-1.2
V
BVGD
Gate-Drain Breakdown Voltage, (Ig = 0.18 mA, source open)
-15
-13
V
BVGS
Gate-Source Breakdown Voltage, (Ig = 0.18 mA, drain open)
-15
-11
V
Thermal Resistance (Au-Sn Eutectic Attach)
193
Rth
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
°C/W
January 2015
Rev. 1.3
BCP018B
ELECTRICAL CHARACTERISTICS (Ta = 25° C)
PARAMETER/TEST CONDITIONS
TEST
FREQ.
MIN.
TYPICAL
MAX.
UNIT
P1dB
Output Power @ P1dB (Vds = 8V, Id = 33mA)
12 GHz
18 GHz
22.0
23.0
23.0
dBm
G1dB
Gain @ P1dB (Vds = 8V, Id = 33mA)
12 GHz
18 GHz
13.5
14.5
12.5
dB
PAE
PAE @ P1dB (Vds = 8V, Id = 33mA)
12 GHz
18 GHz
60
60
%
NF
50 Ohm Noise Figure (Vds = 2V, Ids = 10mA)
12 GHz
0.9
dB
MAXIMUM RATING (Ta = 25° C)
PARAMETERS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
CONTINUOUS
12 V
-6 V
Idss
11 mA
17 dBm
175° C
-60° C - 150° C
0.8 W
8V
-3 V
Idss
2 mA
@ 3dB compression
150° C
-60° C - 150° C
0.65 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
PIN_POUT/Gain, PAE
Frequency = 12GHz
Vds = 8 V, Ids = 33 mA
www.berex.com
Frequency = 18GHz
Vds = 8 V, Ids = 33 mA
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3
BCP018B
S-PARAMETERS (Vds = 8V, Ids = 33mA)
FREQ.
[GHZ]
S11
[MAG]
S11
[ANG.]
S21
[MAG]
S21
[ANG.]
S12
[MAG]
S12
[ANG.]
S22
[MAG]
S22
[ANG.]
1
0.99
-13.55
5.28
168.86
0.011
76.70
0.84
-3.25
2
0.97
-26.32
5.15
159.01
0.021
75.94
0.83
-6.54
3
0.95
-38.80
5.05
149.56
0.029
69.21
0.82
-9.90
4
0.91
-51.61
4.94
139.79
0.038
61.07
0.80
-13.65
5
0.88
-65.38
4.83
130.22
0.044
58.45
0.78
-15.92
6
0.85
-79.06
4.71
120.82
0.050
52.80
0.75
-18.34
7
0.80
-92.86
4.57
110.94
0.055
45.76
0.73
-22.13
8
0.76
-107.70
4.41
101.46
0.059
40.51
0.69
-24.07
9
0.73
-122.77
4.26
91.88
0.062
35.41
0.66
-27.37
10
0.71
-137.89
4.06
82.63
0.064
30.94
0.63
-30.18
11
0.69
-152.87
3.84
73.71
0.065
27.52
0.59
-32.65
12
0.69
-168.14
3.64
64.53
0.065
19.87
0.55
-35.56
13
0.70
178.07
3.43
56.05
0.063
16.76
0.51
-38.65
14
0.72
165.13
3.22
48.09
0.065
13.49
0.47
-41.17
15
0.74
153.54
3.03
40.21
0.063
11.36
0.43
-43.53
16
0.76
143.30
2.84
32.60
0.064
8.96
0.39
-47.14
17
0.79
135.53
2.67
25.62
0.063
7.20
0.36
-52.01
18
0.81
126.69
2.52
18.07
0.063
3.29
0.32
-57.37
19
0.83
119.07
2.33
9.82
0.065
1.67
0.30
-69.58
20
0.85
114.25
2.16
2.97
0.064
-1.23
0.26
-80.64
21
0.85
108.47
1.99
-4.31
0.065
-1.31
0.23
-100.68
22
0.85
105.83
1.82
-10.24
0.068
-2.44
0.23
-115.86
23
0.85
104.07
1.67
-16.54
0.069
-4.76
0.24
-135.50
24
0.85
103.69
1.52
-22.02
0.066
-4.24
0.27
-153.30
25
0.85
101.80
1.41
-27.51
0.065
-4.17
0.30
-168.99
26
0.88
104.42
1.29
-32.94
0.066
2.27
0.36
178.41
Note: S-parameters include bond wires. Reference planes are at edge of substrates shown on “Wire Bonding Information” figure below.
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3
BCP018B
WIRE BONDING INFORMATION
Follow the wire bonding diagrams recommended by BeRex below to achieve optimum device performance. BeRex
recommends thermo-compression wedge bonding. As a general rule, bonding temperature should be kept to a
maximum of 280℃ for no longer than 2 minute for all bonding wires. Ultrasonic bonding is not recommended.
Using 1 mil. diameter, Au bonding wires.
1. Gate to input transmission line
- Length and Height : 600 µm x 250 µm
- Number of wire(s): 1
2. Drain to output transmission line
- Length and Height : 400 µm x 250 µm
- Number of wire(s) : 1
3. Source to ground plate
- Length and Height : 250 µm x 350 µm
- Number of wire(s) : 4
DIE ATTACH RECOMMENDATIONS:
BeRex recommends the “Eutectic” die attach using Au-Sn (80%-20%) pre-forms. The die attach station must have
accurate temperature control, and the operation should be performed with parts no hotter than 300°C for less
than 10 seconds. An inert forming gas (90% N2-10% H2) or clean, dry N2 should be used.
HANDLING PRECAUTIONS:
GaAs FETs are very sensitive to and may be damaged by Electrostatic Discharge (ESD). Therefore, proper ESD
precautions must be taken whenever you are handling these devices. It is critically important that all work
surfaces, and assembly equipment, as well as the operator be properly grounded when handling these devices to
prevent ESD damage.
STORAGE & SHIPPING:
BeRex’s standard chip device shipping package consists of an antistatic “Gel-Pak”, holding the chips, placed inside a
sealed antistatic and moisture barrier bag. This packaging is designed to provide a reasonable measure of
protection from both mechanical and ESD damage.
Chip devices should be stored in a clean, dry Nitrogen gas environment at room temperature until they are
required for assembly. Only open the shipping package or perform die assembly in a work area with a class 10,000
or better clean room environment to prevent contamination of the exposed devices.
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3
BCP018B
CAUTION:
THIS PRODUCT CONTAINS GALLIUM ARSENIDE (GaAs) WHICH CAN BE HAZARDOUS TO THE HUMAN BODY AND THE
ENVIRONMENT. THEREFORE, IT MUST BE HANDLED WITH CARE AND IN ACCORDANCE WITH ALL GOVERNMENTAL
AND COMPANY REGULATIONS FOR THE SAFE HANDLING AND DISPOSAL OF HAZARDOUS WASTE. DO NOT BURN,
DESTROY, CUT, CRUSH OR CHEMICALLY DISSOLVE THE PRODUCT. DO NOT LICK THE PRODUCT OR IN ANY WAY
ALLOW IT TO ENTER THE MOUTH. EXCLUDE THE PRODUCT FROM GENERAL INDUSTRIAL WASTE OR GARBAGE AND
DISPOSE OF ONLY IN ACCORDANCE TO APPLICABLE LAWS AND/OR ORDINANCES.
DISCLAIMER
BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES WITHOUT
THE EXPRESS WRITTEN APPROVAL OF BEREX.
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the
body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with
instructions for use provided in labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness.
RoHS COMPLIANT/NO LEAD
For complete specifications, S-parameters and information on bonding and handling, visit our website;
www.berex.com
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3