Corel Ventura - 3N165.CHP

Monolithic Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
LLC
3N165 / 3N166
FEATURES
ABSOLUTE MAXIMUM RATINGS (Note 1)
(TA = 25oC unless otherwise specified)
• Very High Impedance
• High Gate Breakdown
• Low Capacitance
Drain-Source or Drain-Gate Voltage (Note 2)
3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . . ±125
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V
Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25oC. . . . . . . . . . . . . . . . . . 4.2mW/ oC
PIN CONFIGURATION
BOTTOM VIEW
TO-99
D2
S
G2
D1
G1
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
0180
2506
C
G2
G1
D2
D1
S
ORDERING INFORMATION
DEVICE SCHEMATIC
1
7
3
Part
Package
Temperature Range
3N165-66
X3N165-66
Hermetic TO-99
Sorted Chips in Carriers
-55oC to +150oC
-55oC to +150oC
5
8
4
0190
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
IGSSR
Gate Reverse Leakage Current
IGSSF
Gate Forward Leakage Current
MIN
MAX
UNITS
10
-10
-25
TEST CONDITIONS
VGS = 40V
VGS = -40V
pA
TA = +125oC
IDSS
Drain to Source Leakage Current
-200
VDS = -20V
ISDS
Source to Drain Leakage Current
-400
VSD = -20V, VDB = 0
ID(on)
On Drain Current
-5
-30
VGS(th)
Gate Source Threshold Voltage
-2
-5
VGS(th)
Gate Source Threshold Voltage
-2
-5
rDS(on)
Drain Source ON Resistance
300
mA
V
VDS = -15V, VGS = -10V
VDS = -15V, ID = -10µA
VDS = VGS, I D = -10µA
ohms
VGS = -20V, ID = -100µA
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS018 REV A
3N165 / 3N166
LLC
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
1500
3000
gfs
Forward Transconductance
gos
Output Admittance
300
Ciss
Input Capacitance
3.0
Crss
Reverse Transfer Capacitance
0.7
Coss
Output Capacitance
3.0
RE(Yfs)
Common Source Forward Transconductance
MATCHING CHARACTERISTICS
SYMBOL
UNITS
1200
TEST CONDITIONS
µS
VDS = -15V, ID = -10mA, f = 1kHz
pF
VDS = -15V, ID = -10mA, f = 1MHz (Note 4)
µs
VDS = -15V, ID = -10mA, f = 100MHz (Note 4)
3N165
PARAMETER
MIN
MAX
0.90
1.0
UNITS
TEST CONDITIONS
Yfs1 / Yfs2
Forward Transconductance Ratio
VGS1-2
Gate Source Threshold Voltage Differential
100
mV
VDS = -15V, ID = -500µA
∆VGS1−2
∆T
Gate Source Threshold Voltage Differential
Change with Temperature
100
µV/ oC
VDS = -15V, IA = -500µA
TA = -55oC to +25 oC
NOTES: 1.
2.
3.
4.
VDS = -15V, ID = -500µA, f = 1kHz
See handling precautions on 3N170 data sheet.
Per transistor.
Devices must not be tested at ±125V more than once, nor longer than 300ms.
For design reference only, not 100% tested.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS018 REV A