CALOGIC XIT1700

P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
CORPORATION
IT1700
FEATURES
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
• Low ON-Resistance
• High Gain
Noise Voltage
• Low
• High Input Impedance
• Low Leakage
Drain-Source and Gate-Source Voltage . . . . . . . . . . . . . -40V
Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/ oC
PIN CONFIGURATION
TO-72
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
S
C
G
1503
D
Part
Package
IT1700
XIT1700
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
IT1700
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX UNITS
TEST CONDITIONS
BVDSS
Drain to Source Breakdown Voltage
-40
V
VGS = 0, I D = -10µA
BVSDS
Source to Drain Breakdown Voltage
-40
V
VGS = 0, I D = -10µA
IGSS
Gate Leakage Current
IDSS
(See note 2)
Drain to Source Leakage Current
200
pA
IDSS (150 C)
Drain to Source Leakage Current
0.4
µA
ISDS
Source to Drain Leakage Current
400
pA
ISDS (150 C)
Source to Drain Leakage Current
0.8
µA
VGS(th)
Gate Threshold Voltage
-5
V
rDS(on)
Static Drain to Source "on" Resistance
400
ohms
IDS(on)
Drain to Source "on" Current
gfs
Forward Transconductance Common Source
Ciss
Small Signal, Short Circuit, Common Source,
Input Capacitance
Crss
Coss
o
o
-2
2
VGS = 0, VDS = -20V
VGS = VDS, I D = -10µA
VGS = -10V, VDS = 0
mA
VGS = -10V, VDS = -15V
µS
VDS = -15V, ID = -10mA, f = 1kHz
5
pF
VDS = -15V, ID = -10mA
f = 1MHz (Note 3)
Small Signal, Short Circuit, Common Source,
Reverse Transfer Capacitance
1.2
pF
VDG = -15V, I D = 0
f = 1MHz (Note 3)
Small Signal, Short Circuit, Common Source,
Output Capacitance
3.5
pF
VDS = -15V, ID = -10mA
f = 1MHz (Note 3)
2000 4000
NOTES: 1. Device must not be tested at ±125V more than once nor longer than 300ms.
2. Actual gate current is immeasurable. Package suppliers are required to guarantee a package leakage of < 10pA.
External package leakage is the dominant mode which is sensitive to both transient and storage environment, which cannot be guaranteed.
3. For design reference only, not 100% tested.