Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch LLC 3N161 FEATURES • Channel Cut Off With Zero Gate Voltage • Square-Law Transfer Characteristic Reduces Distortion Substrate Connection Provides Flexibility • Independent In Biasing • Internally Connected Diode Protects Gate From Damage Due to Overvoltage PIN CONFIGURATION TO-72 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage . . . . . . . . . . . . . . . . . 40V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION S C 1507Z G Part Package 3N161 X3N161 Hermetic TO-72 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC D ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL IGSSF PARAMETER MIN MAX Forward Gate-Terminal Current BVGSS Forward Gate-Source Breakdown Voltage IDSS Zero-Gate-Voltage Drain Current UNITS -100 pA -10 nA -25 TEST CONDITIONS VGS = -25V, VDS = 0 TA = +100oC V IG = -0.1mA, VDS = 0 -10 nA VDS = -15V, VGS = 0 -10 µA VDS = -25V, VGS = 0 VGS(th) Gate-Source Threshold Voltage -1.5 -5 VGS Gate-Source Voltage -4.5 -8 ID(on) On-State Drain Current (Note 2) -40 -120 | yfs | Small-Signal Common-Source Forward Transfer Admittance | yos | Small-Signal Common-Source Output Admittance 3500 6500 250 Ciss Common-Source Short-Circuit Input Capacitance (Note 1) 10 Crss Common-Source Short-Circuit Reverse Transfer Capacitance (Note 1) 4 V VDS = -15V, ID = -10µA VDS = -15V, ID = -8mA mA VDS = -15V, VGS = -15V µS f = 1kHz VDS = -15V, ID = -8mA pF f = 1MHz NOTES: 1. For design reference only, not 100% tested. 2. Pulse test duration 300µs; duty cycle ≤3%. CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS016