Corel Ventura - 2N4352.CHP

P-Channel Enhancement Mode
MOSFET Amplifier/Switch
LLC
2N4352
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
FEATURES
•
•
•
•
Low ON Resistance
Low Capacitance
High Gain
P-Channel Complement to 2N4341
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/ oC
PIN CONFIGURATION
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TO-72
ORDERING INFORMATION
C
D
1503
S
G
Part
Package
2N4352
X2N4352
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
V(BR)DSX
Drain-Source Breakdown Voltage
-25
IDSS
Zero-Gate-Voltage Drain Current
IGSS
Gate Reverse Current
VGS(th)
Gate Threshold Voltage
VDS(on)
Drain-Source On-Voltage
ID(on)
On-State Drain Current
rDS(on)
Drain-Source Resistance
| yfs |
Forward Transfer Admittance
Ciss
Input Capacitance
5.0
Crss
Reverse Transfer Capacitance
1.3
Cd(sub)
Drain-Substrate Capacitance
5.0
td1
Turn-On Delay
45
tr
Rise Time
65
td2
Turn-Off Delay
60
tf
Fall Time
100
-1.0
UNITS
TEST CONDITIONS
Vdc
ID = -10µA, VGS = 0
-10
-10
nAdc
µAdc
VDS = -10V, VGS = 0, TA = 25oC
VDS = -10V, VGS = 0, TA = 150 oC
±10
pA
VGS = ±30V, VDS = 0
-5.0
Vdc
VDS = -10V, ID = -10µA
-1.0
V
ID = -2mA, VGS = -10V
mA
VGS = -10V, VDS = -10V
-3.0
600
1000
ohms
VGS = -10V, ID = 0, f = 1.0kHz
µmho
VDS = -10V, ID = 2.0mA, f = 1.0kHz
VDS = -10V, VGS = 0, f = 140MHz
pF
VDS = 0, VGS = 0, f = 140MHz
VD(sub) = -10V, f = 140kHz
ns
ID = -2.0mAdc, VDS = -10Vdc
VGS = -10V
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