N-Channel JFET Monolithic Dual LLC SST5912 FEATURES DESCRIPTION APPLICATIONS The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain (typically > 6000 mmhos), low leakage ( < 1pA typically) and low noise, The SST5912 is an excellent choice for differential wideband amplifiers, VHF/UHF amplifiers and test and measurement. • High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS • Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical Noise • Low • Surface Mount Package • Differential Wideband Amplifier • VHF/UHF Amplifiers • Test and Measurement ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC SST5912 Plastic SO-8 Package NOTE: For Sorted Chips in Carriers, See 2N5911 Series PIN CONFIGURATION TOP VIEW SO-8 (1) S1 N/C (8) (2) D1 G2 (7) (3) G1 D2 (6) (4) N/C S2 (5) CJ1 PRODUCT MARKING SST5912 SST5912 CALOC LLC, 237 WHITNEY PLACE, FREMONT,CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS072 REV A SST5912 LLC ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Gate-Drain Voltage Gate-Source Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol Limit Unit VGD VGS IG PD -25 -25 50 300 500 2.4 4 -55 to 150 -65 to 150 300 V V mA mW mW mW/ oC mW/ oC o C o C o C TJ Tstg TL ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL CHARACTERISTCS TYP1 SST5912 MIN MAX UNIT TEST CONDITIONS STATIC Gate-Source Breakdown Voltage -35 -25 VGS(OFF) Gate-Source Cut off Voltage -3.5 -1 -5 IDSS Saturation Drain Current 15 7 40 mA VDS = 10V, VGS = 0V IGSS Gate Reverse Current -100 pA VGS = -15V, VDS = 0V nA TA = 125 oC IG Gate Operating Current VGS Gate-Source Voltage -1.5 VGS(F) Gate-Source Forward Voltage 0.7 V(BR)GSS 2 -1 -0.2 -1 -100 -0.2 -0.3 -4 V IG = -1mA, VDS = 0V VDS = 10V, ID = 1nA pA VDG = 10V, ID = 5mA nA TA = 125 oC V VDG = 10V, ID = 5mA IG = 1mA, VDS = 0V DYNAMIC gfs Common-Source Forward Transconductance 6 gos Common-Source Output Conductance 20 5 gfs Common-Source Forward Transconductance 6 gos Common-Source Output Conductance 30 Ciss Common-Source Input Capacitance 3.5 5 Crss Common-Source Reverse Transfer Capacitance 1 1.2 en Equivalent Input Noise Voltage 4 20 NF Noise Figure 0.1 1 dB VDG = 10V, ID = 5mA, f = 10kHz, RG = 100W 7 15 mV VDG = 10V, ID = 5mA 10 40 10 40 5 10 mS 100 mS 10 mS 150 mS pF VDG = 10V, ID = 5mA f = 1kHz VDG = 10V, ID = 5mA f = 100MHz VDG = 10V, ID = 5mA f = 1MHz nV/ Hz VDG = 10V, ID = 5mA, f = 10kHz MATCHING | VGS1 - VGS2 | Differential Gate Source Voltage D | VGS1 - VGS2 | Gate Source Voltage Differential Change with Temperature DT IDSS1 IDSS2 mV/ oC T = -55 to 25oC T = 25 to 125 oC VDG = 10V ID = 5mA Saturation Drain Current Ratio 0.98 0.95 1 VDS = 10V, VGS = 0V gfs1 gfs2 Transconductance Ratio 0.98 0.95 1 VDG = 10V, ID = 5mA, f = 1kHz | IG1 - IG2 | Differential Gate Current 0.01 CMRR Common Mode Rejection Ratio 90 20 nA VDG = 10V, ID = 5mA, TA = 125oC dB VDD = 5 to 10V, ID = 5mA NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300ms, duty cycle â 3%. CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS072 REV A