2N5911 - Calogic, LLC

Dual N-Channel JFET
High Frequency Amplifier
LLC
2N5911 / 2N5912
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
FEATURES
• Tight Tracking
• Low Insertion Loss
• Good Matching
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
PIN CONFIGURATION
One Side
367mW
3.0mW/ oC
Power Dissipation
Derate above 25oC
TO-99
TO-78
Both Sides
500mW
4.0mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
CJ1
C
G2
D2
S2
G1
D1
S1
Part
Package
Temperature Range
2N5911-12
X2N5912
Hermetic
Hermetic TO-99
TO-78
Sorted Chips in Carriers
-55oC to +150oC
-55oC to +150oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
IGSS
PARAMETER
MIN
Gate Reverse Current
BVGSS
Gate Reverse Breakdown Voltage
-25
VGS(off)
Gate-Source Cutoff Voltage
-1
VGS
Gate-Source Voltage
IG
-0.3
MAX
UNITS
-100
pA
-250
nA
VGS = -15V, VDS = 0
TA = 150 oC
IG = -1µA, VDS = 0
-5
V
-4
VDS = 10V, ID = 1nA
VDG = 10V, ID = 5mA
-100
pA
-100
nA
7
40
mA
Gate Operating Current
TEST CONDITIONS
TA = 150 oC
IDSS
Saturation Drain Current (Pulsewidth 300µs, duty cycle ≤3%)
gfs
Common-Source Forward Transconductance
5000
10,000
f = 1kHz
gfs
Common-Source Forward Transconductance (Note 1)
5000
10,000
f = 100MHz
gos
Common-Source Output Conductance
100
goss
Common-Source Output Conductance (Note 1)
150
Ciss
Common-Source Input Capacitance (Note 1)
Crss
Common-Source Reverse Transfer Capacitance (Note 1)
1.2
en
Equivalent Short Circuit Input Noise Voltage (Note 1)
NF
Spot Noise Figure (Note 1)
5
VDS = 10V, VGS = 0V
µS
f = 1kHz
f = 100MHz
VDG = 10V, ID = 5mA
pF
f = 1MHz
20
nV
√
Hz
f = 10kHz
1
dB
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
f = 10kHz
RG = 100kΩ
DS013 REV B
2N5911 / 2N5912
LLC
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
2N5911
2N5912
UNITS
TEST CONDITIONS
MIN MAX MIN MAX
| IG1 -IG2 |
Differential Gate Current
IDSS1
IDSS2
Saturation Drain Current Ratio
| VGS1 -VGS2 |
Differential Gate-Source Voltage
10
15
∆ | VGS1 − VGS2 |
∆T
Gate-Source Voltage
Differential Drift (Measured at
end points, TA and TB)
20
40
gfs1
gfs2
Transconductance Ratio
20
0.95
1
20
0.95
nA
0.95
1
0.95
TA = 125oC
VDS = 10V, VGS = 0
(Pulsewidth 300µA, duty cycle ≤3%)
1
mV
µV/ oC
20
VDG = 10V, ID = 5mA
TA = 25oC
TB = 125oC
VDG = 10V, ID = 5mA
40
TA = -55oC
TB = 25 oC
1
f = 1kHz
NOTE 1: For design reference only, not 100% tested.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS013 REV B