Dual N-Channel JFET High Frequency Amplifier LLC 2N5911 / 2N5912 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC PIN CONFIGURATION One Side 367mW 3.0mW/ oC Power Dissipation Derate above 25oC TO-99 TO-78 Both Sides 500mW 4.0mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION CJ1 C G2 D2 S2 G1 D1 S1 Part Package Temperature Range 2N5911-12 X2N5912 Hermetic Hermetic TO-99 TO-78 Sorted Chips in Carriers -55oC to +150oC -55oC to +150oC ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL IGSS PARAMETER MIN Gate Reverse Current BVGSS Gate Reverse Breakdown Voltage -25 VGS(off) Gate-Source Cutoff Voltage -1 VGS Gate-Source Voltage IG -0.3 MAX UNITS -100 pA -250 nA VGS = -15V, VDS = 0 TA = 150 oC IG = -1µA, VDS = 0 -5 V -4 VDS = 10V, ID = 1nA VDG = 10V, ID = 5mA -100 pA -100 nA 7 40 mA Gate Operating Current TEST CONDITIONS TA = 150 oC IDSS Saturation Drain Current (Pulsewidth 300µs, duty cycle ≤3%) gfs Common-Source Forward Transconductance 5000 10,000 f = 1kHz gfs Common-Source Forward Transconductance (Note 1) 5000 10,000 f = 100MHz gos Common-Source Output Conductance 100 goss Common-Source Output Conductance (Note 1) 150 Ciss Common-Source Input Capacitance (Note 1) Crss Common-Source Reverse Transfer Capacitance (Note 1) 1.2 en Equivalent Short Circuit Input Noise Voltage (Note 1) NF Spot Noise Figure (Note 1) 5 VDS = 10V, VGS = 0V µS f = 1kHz f = 100MHz VDG = 10V, ID = 5mA pF f = 1MHz 20 nV √ Hz f = 10kHz 1 dB CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX f = 10kHz RG = 100kΩ DS013 REV B 2N5911 / 2N5912 LLC ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 2N5911 2N5912 UNITS TEST CONDITIONS MIN MAX MIN MAX | IG1 -IG2 | Differential Gate Current IDSS1 IDSS2 Saturation Drain Current Ratio | VGS1 -VGS2 | Differential Gate-Source Voltage 10 15 ∆ | VGS1 − VGS2 | ∆T Gate-Source Voltage Differential Drift (Measured at end points, TA and TB) 20 40 gfs1 gfs2 Transconductance Ratio 20 0.95 1 20 0.95 nA 0.95 1 0.95 TA = 125oC VDS = 10V, VGS = 0 (Pulsewidth 300µA, duty cycle ≤3%) 1 mV µV/ oC 20 VDG = 10V, ID = 5mA TA = 25oC TB = 125oC VDG = 10V, ID = 5mA 40 TA = -55oC TB = 25 oC 1 f = 1kHz NOTE 1: For design reference only, not 100% tested. CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS013 REV B