2N5911, 2N5912

Databook.fxp 1/14/99 11:31 AM Page B-23
B-23
01/99
2N5911, 2N5912
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Wideband Differential
Amplifiers
Continuous Forward Gate Current
Total Device Power Dissipation
Power Derating
Storage Temperature Range
At 25°C free air temperature:
2N5911
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Operating Current
IG
Max
– 25
2N5912
Min
Max
– 25
50 mA
500 mW
4 mW°C
–65°C to + 200°C
Process NJ30L or NJ36D
Unit
Test Conditions
V
IG = – 1 µA, VDS = ØV
– 100
– 100
pA
VGS = – 15V, VDS = ØV
– 250
– 250
nA
VGS = – 15V, VDS = ØV
– 100
– 100
pA
VDG = 10V, ID = 5 mA
– 100
– 100
nA
VDG = 10V, ID = 5 mA
Gate Source Cutoff Voltage
VGS(OFF)
–1
–5
–1
–5
V
VDS = 10V, ID = 1 nA
Gate Source Voltage
VGS
– 0.3
–4
– 0.3
–4
V
VDS = 10V, ID = 5 mA
Drain Saturation Current (Pulsed)
IDSS
7
40
7
40
mA
VDS = 10V, VGS = ØV
TA = 150°C
TA = 125°C
Dynamic Electrical Characteristics
5000 10000 5000 10000
µS
VDG = 10V, ID = 5 mA
f = 1 kHz
5000 10000 5000 10000
µS
VDG = 10V, ID = 5 mA
f = 100 MHz
µS
VDG = 10V, ID = 5 mA
f = 1 kHz
µS
VDG = 10V, ID = 5 mA
f = 100 MHz
pF
VDG = 10V, ID = 5 mA
f = 1 MHz
1.2
pF
VDG = 10V, ID = 5 mA
f = 1 MHz
20
20
nV/√Hz
VDG = 10V, ID = 5 mA
f = 10 kHz
1
1
dB
VDG = 10V, ID = 5 mA
RG = 100 KΩ
f = 10 kHz
20
nA
VDG = 10V, ID = 5 mA
TA = 125°C
Common Source
Forward Transconductance
gfs
Common Source
Output Conductance
gos
100
100
150
150
Common Source Input Capacitance
Ciss
5
5
Common Source
Reverse Transfer Capacitance
Crss
1.2
Equivalent Short Circuit Input Noise Voltage
e¯ N
Noise Figure
NF
Differential Gate Current
Saturation Drain Current Ratio
IG1 – IG2
IDSS1 / IDSS2
Differential Gate Source Voltage
| VGS1 – VGS2 |
Gate Source Voltage
Differential Drift
Transconductance Ratio
20
0.95
∆VGS1– VGS2
∆T
gfs1 / gfs2
0.9
1
0.95
1
VDG = 20V, VGS = ØV
10
15
mV
VDG = 10V, ID = 5 mA
20
40
mV
VDG = 10V, ID = 5 mA
TA = 25°C,
TB = 125°C
20
40
mV
VDG = 10V, ID = 5 mA
TA = – 55°C,
TB = 25°C
VDG = 10V, ID = 5 mA
f = 1 kHz
1
0.85
1
SOIC-8 Package
TOÐ78 Package
Surface Mount
See Section G for Outline Dimensions
See Section G for Outline Dimensions
SMP5911, SMP5912
Pin Configuration
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C,
5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted
1 Source 1, 2 Drain 1, 3 Gate 1,
4 Case, 5 Source 2, 6 Drain 2,
7 Gate 2, 8 Omitted
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