MC33363B High Voltage Switching Regulator The MC33363B is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on−chip 700 V/1.0 A SENSEFET® power switch, 500 V active off−line startup FET, duty cycle controlled oscillator, current limiting comparator with a programmable threshold and leading edge blanking, latching pulse width modulator for double pulse suppression, high gain error amplifier, and a trimmed internal bandgap reference. Protective features include cycle−by−cycle current limiting, input undervoltage lockout with hysteresis, overvoltage protection, and thermal shutdown. This device is available in a 16−lead dual−in−line and wide body surface mount packages. www.onsemi.com MARKING DIAGRAMS 16 SO−16WB DW SUFFIX CASE 751N 1 Features • • • • • • • • • • On−Chip 700 V, 1.0 A SENSEFET Power Switch Rectified 240 Vac Line Source Operation On−Chip 500 V Active Off−Line Startup FET Latching PWM for Double Pulse Suppression Cycle−By−Cycle Current Limiting Input Undervoltage Lockout with Hysteresis Over−Voltage Protection Trimmed Internal Bandgap Reference Internal Thermal Shutdown These are Pb−Free Devices* A WL YY WW G MC33363BDW AWLYYWWG = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONNECTIONS Startup Input 1 VCC 3 16 4 13 5 12 RT 6 11 CT 7 10 Regulator Output 8 9 AC Input GND GND Startup Input Regulator Output 1 Startup Mirror VCC Reg 8 UVLO 6 OVP RT CT PWM Latch Osc 7 Driver S Q 3 Overvoltage Protection Input DC Output Ipk 11 16 Power Switch Drain LEB Compensation Thermal 9 EA GND 4, 5, 12, 13 Overvoltage Protection Input Voltage Feedback Input Compensation (Top View) R PWM Power Switch Drain ORDERING INFORMATION Device Package Shipping† MC33363BDWG SO−16WB (Pb−Free) 47 Units/Rail MC33363BDWR2G SO−16WB 1000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 10 Voltage Feedback Input Figure 1. Simplified Application *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 February, 2015 − Rev. 11 1 Publication Order Number: MC33363B/D MC33363B MAXIMUM RATINGS (Note 1) Symbol Value Unit Power Switch (Pin 16) Drain Voltage Drain Current VDS IDS 700 1.0 V A Startup Input Voltage (Pin 1, Note 2) Vin 500 V Power Supply Voltage (Pin 3) VCC 40 V Input Voltage Range Voltage Feedback Input (Pin 10) Compensation (Pin 9) Overvoltage Protection Input (Pin 11) RT (Pin 6) CT (Pin 7) VIR −1.0 to Vreg V Rating Thermal Characteristics P Suffix, Dual−In−Line Case 648E Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case DW Suffix, Surface Mount Case 751G Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case °C/W RqJA RqJC 80 15 RqJA RqJC 95 15 Operating Junction Temperature TJ −25 to +150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per JEDEC Standard JESD22, Method A114E. Machine Model Method 200 V per JEDEC Standard JESD22, Method A115A. 2. Maximum power dissipation limits must be observed. Thigh = +125°C 3. Tested junction temperature range for the MC33363B: Tlow = −25°C ELECTRICAL CHARACTERISTICS (VCC = 20 V, RT = 10 k, CT = 390 pF, CPin 8 = 1.0 mF, for typical values TJ = 25°C, for min/max values TJ is the operating junction temperature range that applies (Note 3), unless otherwise noted.) Symbol Min Typ Max Unit Output Voltage (IO = 0 mA, TJ = 25°C) Vreg 5.5 6.5 7.5 V Line Regulation (VCC = 20 V to 40 V) Regline − 30 500 mV Load Regulation (IO = 0 mA to 10 mA) Regload − 44 200 mV Vreg 5.3 − 8.0 V Characteristic REGULATOR (Pin 8) Total Output Variation over Line, Load, and Temperature OSCILLATOR (Pin 7) fOSC Frequency CT = 390 pF TJ = 25°C (VCC = 20 V) TJ = Tlow to Thigh (VCC = 20 V to 40 V) CT = 2.0 nF TJ = 25°C (VCC = 20 V) TJ = Tlow to Thigh (VCC = 20 V to 40 V) kHz 260 255 285 − 310 315 60 59 67.5 − 75 76 DfOSC/DV − 0.1 2.0 kHz VFB 2.52 2.6 2.68 V Line Regulation (VCC = 20 V to 40 V, TJ = 25°C) Regline − 0.6 5.0 mV Input Bias Current (VFB = 2.6 V, TJ = 0 − 125°C) IIB − 20 500 nA Frequency Change with Voltage (VCC = 20 V to 40 V) ERROR AMPLIFIER (Pins 9, 10) Voltage Feedback Input Threshold Open Loop Voltage Gain (TJ = 25°C) AVOL 70 82 94 dB Gain Bandwidth Product (f = 100 kHz, TJ = 25°C) GBW 0.85 1.0 1.15 MHz Output Voltage Swing High State (ISource = 100 mA, VFB < 2.0 V) Low State (ISink = 100 mA, VFB > 3.0 V) VOH VOL 4.0 − 5.3 0.2 − 0.35 V www.onsemi.com 2 MC33363B ELECTRICAL CHARACTERISTICS (VCC = 20 V, RT = 10 k, CT = 390 pF, CPin 8 = 1.0 mF, for typical values TJ = 25°C, for min/max values TJ is the operating junction temperature range that applies (Note 4), unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Input Threshold Voltage Vth 2.47 2.6 2.73 V Input Bias Current (Vin = 2.6 V, TJ = −25 − 125°C) IIB − 100 500 nA DC(max) DC(min) 48 − 50 0 52 0 − − 15 − 17 39 − − 0.25 − 1.0 50 OVERVOLTAGE DETECTION (Pin 11) PWM COMPARATOR (Pins 7, 9) Duty Cycle Maximum (VFB = 0 V) Minimum (VFB = 2.7 V) % POWER SWITCH (Pin 16) Drain−Source On−State Resistance (ID = 200 mA) TJ = 25°C TJ = Tlow to Thigh RDS(on) Drain−Source Off−State Leakage Current (VDS = 650 V) TJ = 25°C TJ = Tlow to Thigh ID(off) W mA Rise Time tr − 50 − ns Fall Time tf − 50 − ns Ilim 0.5 0.72 0.9 A 2.0 2.0 5.0 5.0 8.0 8.0 OVERCURRENT COMPARATOR (Pin 16) Current Limit Threshold (RT = 10 k) STARTUP CONTROL (Pin 1) Peak Startup Current (Vin = 50 V) (TJ = −25 − 100°C) VCC = 0 V VCC = (Vth(on) − 0.2 V) Istart mA Off−State Leakage Current (Vin = 50 V, VCC = 20 V) ID(off) − 40 200 mA Vth(on) 11 15.2 18 V VCC(min) 7.5 9.5 11.5 V − − 0.25 3.2 0.5 5.0 − − 135 30 − − UNDERVOLTAGE LOCKOUT (Pin 3) Startup Threshold (VCC Increasing) Minimum Operating Voltage After Turn−On TOTAL DEVICE (Pin 3) Power Supply Current Startup (VCC = 10 V, Pin 1 Open) Operating ICC mA THERMAL SHUTDOWN Shutdown (Junction Temperature Increasing) Hysteresis (Junction Temperature Decreasing) Tsd TH °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thigh = +125°C 4. Tested junction temperature range for the MC33363B: Tlow = −25°C www.onsemi.com 3 CT = 100 pF VCC = 20 V TA = 25°C 500 k C = 200 pF T 200 k CT = 500 pF 100 k CT = 1.0 nF 50 k 20 k CT = 2.0 nF CT = 5.0 nF CT = 10 nF 10 15 20 30 70 50 0.2 0.15 0.1 7.0 Inductor supply voltage and inductance value are adjusted so that Ipk turn-off is achieved at 5.0 ms. 10 15 20 30 40 50 Figure 2. Oscillator Frequency versus Timing Resistor Figure 3. Power Switch Peak Drain Current versus Timing Resistor VCC = 20 V TA = 25°C 0.5 0.3 0.2 0.15 0.1 10 15 20 30 70 50 70 60 50 40 RC/RT Ratio Charge Resistor Pin 7 to Vreg 30 1.0 2.0 3.0 5.0 7.0 TIMING RESISTOR RATIO Figure 4. Oscillator Charge/Discharge Current versus Timing Resistor Figure 5. Maximum Output Duty Cycle versus Timing Resistor Ratio 100 VCC = 20 V VO = 1.0 to 4.0 V RL = 5.0 MW CL = 2.0 pF TA = 25°C 80 Gain 60 0 30 60 Phase 40 90 20 120 0 150 100 1.0 k 10 k 100 k 180 10 M 1.0 M 10 0 Source Saturation (Load to Ground) -1.0 Vref -2.0 2.0 Sink Saturation (Load to Vref) VCC = 20 V TA = 25°C 1.0 GND 0 0 f, FREQUENCY (Hz) 0.2 0.4 0.6 0.8 IO, OUTPUT LOAD CURRENT (mA) Figure 6. Error Amp Open Loop Gain and Phase versus Frequency Figure 7. Error Amp Output Saturation Voltage versus Load Current www.onsemi.com 4 70 VCC = 20 V CT = 2.0 nF TA = 25°C RD/RT Ratio Discharge Resistor Pin 7 to GND RT, TIMING RESISTOR (kW) θ, EXCESS PHASE (DEGREES) I chg /I dscg , OSCILLATOR CHARGE/DISCHARGE CURRENT (mA) 0.3 RT, TIMING RESISTOR (kW) 0.08 7.0 A VOL, OPEN LOOP VOLTAGE GAIN (dB) 0.4 RT, TIMING RESISTOR (kW) 0.8 -20 10 VCC = 20 V CT = 1.0 mF TA = 25°C 0.6 Dmax, MAXIMUM OUTPUT DUTY CYCLE (%) 10 k 7.0 1.0 0.8 Vsat , OUTPUT SATURATION VOLTAGE (V) f OSC , OSCILLATOR FREQUENCY (Hz) 1.0 M I PK, POWER SWITCH PEAK DRAIN CURRENT (A) MC33363B 1.0 MC33363B VCC = 20 V AV = -1.0 CL = 10 pF TA = 25°C 1.75 V 1.75 V 0.50 V 1.0 ms/DIV 1.0 ms/DIV Figure 8. Error Amplifier Small Signal Transient Response Figure 9. Error Amplifier Large Signal Transient Response 0 6 -20 I pk , PEAK STARTUP CURRENT (mA) VCC = 20 V RT = 10 k CPin 8 = 1.0 mF TA = 25°C -40 -60 -80 VPin 1 = 50 V TA = 25°C 5 4 3 2 1 0 0 4.0 8.0 12 16 0 20 4.0 6.0 8.0 10 VCC, POWER SUPPLY VOLTAGE (V) Figure 10. Regulator Output Voltage Change versus Source Current Figure 11. Peak Startup Current versus Power Supply Voltage 32 12 160 ID = 200 mA 24 VCC = 20 V TA = 25°C 120 16 8.0 Pulse tested at 5.0 ms with < 1.0% duty cycle so that TJ is as close to TA as possible. 0 -50 2.0 Ireg, REGULATOR SOURCE CURRENT (mA) COSS, DRAIN-SOURCE CAPACITANCE (pF) Δ V reg, REGULATOR VOLTAGE CHANGE (mV) 1.70 V R DS(on), DRAIN-SOURCE ON-RESISTANCE ( Ω ) 0.5 V/DIV 3.00 V 20 mV/DIV 1.80 V VCC = 20 V AV = -1.0 CL = 10 pF TA = 25°C -25 0 25 50 75 100 125 150 80 40 0 1.0 COSS measured at 1.0 MHz with 50 mVpp. 10 100 TA, AMBIENT TEMPERATURE (°C) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. Power Switch Drain−Source On−Resistance versus Temperature Figure 13. Power Switch Drain−Source Capacitance versus Voltage www.onsemi.com 5 1000 MC33363B 3.2 100 RT = 10 k Pin 1 = Open Pin 4, 5, 10, 11, 12, 13 = GND TA = 25°C 0.8 0 10 20 30 1.0 0.01 40 0.1 1.0 10 100 t, TIME (s) Figure 14. Supply Current versus Supply Voltage Figure 15. DW and P Suffix Transient Thermal Resistance 90 2.4 ÎÎÎÎÎ ÎÎÎÎÎ 80 Printed circuit board heatsink example 70 2.0 oz Copper L 60 L 3.0 mm Graphs represent symmetrical layout 50 2.0 1.6 1.2 0.8 RqJA 0.4 40 10 20 30 40 100 R θ JA, THERMAL RESISTANCE JUNCTION-TO-AIR (° C/W) 2.8 PD(max) for TA = 50°C 0 10 VCC, SUPPLY VOLTAGE (V) 100 30 L = 12.7 mm of 2.0 oz. copper. Refer to Figures 16 and 17. 0 50 ÎÎÎÎÎ ÎÎÎÎÎ Printed circuit board heatsink example 80 L RqJA 60 2.0 oz Copper L 3.0 mm Graphs represent symmetrical layout 40 4.0 3.0 2.0 PD(max) for TA = 70°C 20 0 5.0 0 L, LENGTH OF COPPER (mm) 10 20 1.0 30 40 0 50 P D , MAXIMUM POWER DISSIPATION (W) 1.6 0 Rθ JA , THERMAL RESISTANCE JUNCTION-TO-AIR ( °C/W) Rθ JA , THERMAL RESISTANCE JUNCTION-TO-AIR (° C/W) CT = 2.0 nF 2.4 PD, MAXIMUM POWER DISSIPATION (W) I CC, SUPPLY CURRENT (mA) CT = 390 pF L, LENGTH OF COPPER (mm) Figure 16. DW Suffix (SOP−16L) Thermal Resistance and Maximum Power Dissipation versus P.C.B. Copper Length Figure 17. P Suffix (DIP−16) Thermal Resistance and Maximum Power Dissipation versus P.C.B. Copper Length www.onsemi.com 6 MC33363B PIN FUNCTION DESCRIPTION Pin Function Description 1 Startup Input This pin connects directly to the rectified ac line voltage source. Internally Pin 1 is tied to the drain of a high voltage startup MOSFET. During startup, the MOSFET supplies internal bias, and charges an external capacitor that connects from the VCC pin to ground. 2 − 3 VCC This is the positive supply voltage input. During startup, power is supplied to this input from Pin 1. When VCC reaches the UVLO upper threshold, the startup MOSFET turns off and power is supplied from an auxiliary transformer winding. 4, 5, 12, 13 Ground These pins are the control circuit grounds. They are part of the IC lead frame and provide a thermal path from the die to the printed circuit board. 6 RT Resistor RT connects from this pin to ground. The value selected will program the Current Limit Comparator threshold and affect the Oscillator frequency. 7 CT Capacitor CT connects from this pin to ground. The value selected, in conjunction with resistor RT, programs the Oscillator frequency. 8 Regulator Output This 6.5 V output is available for biasing external circuitry. It requires an external bypass capacitor of at least 1.0 mF for stability. 9 Compensation This pin is the Error Amplifier output and is made available for loop compensation. It can be used as an input to directly control the PWM Comparator. 10 Voltage Feedback Input This is the inverting input of the Error Amplifier. It has a 2.6 V threshold and normally connects through a resistor divider to the converter output, or to a voltage that represents the converter output. 11 Overvoltage Protection Input This input provides runaway output voltage protection due to an external component or connection failure in the control loop feedback signal path. It has a 2.6 V threshold and normally connects through a resistor divider to the converter output, or to a voltage that represents the converter output. 14, 15 − 16 Power Switch Drain This pin has been omitted for increased spacing between the rectified ac line voltage on Pin 1 and the VCC potential on Pin 3. These pins have been omitted for increased spacing between the high voltages present on the Power Switch Drain, and the ground potential on Pins 12 and 13. This pin is designed to directly drive the converter transformer and is capable of switching a maximum of 700 V and 1.0 A. 2.6 V Capacitor CT 0.6 V Compensation Oscillator Output PWM Comparator Output PWM Latch Q Output Current Limit Propagation Delay Power Switch Gate Drive Current Limit Threshold Leading Edge Blanking Input (Power Switch Drain Current) Normal PWM Operating Range Figure 18. Timing Diagram of Normal Operation www.onsemi.com 7 Output Overload MC33363B AC Input Startup Input Startup Control Current Mirror Regulator Output 6.5 V 8 Band Gap Regulator I VCC 2.25 I CT Overvoltage Protection Input 14.5 V/ 9.5 V 4I 11 OVP 2.6 V Oscillator 7 DC Output 3 UVLO 6 RT 1 16 PWM Latch Power Switch Drain Driver S Q R PWM Comparator Leading Edge Blanking 8.1 Thermal Shutdown Current Limit Comparator Compensation 405 9 270 m A GND Error Amplifier 2.6 V 10 Voltage Feedback Input 4, 5, 12, 13 Figure 19. Representative Block Diagram 15.2 V VCC 9.5 V Drain Current Figure 20. Timing Diagram of Short−Circuit Condition www.onsemi.com 8 MC33363B OPERATING DESCRIPTION Introduction The MC33363B represents a new higher level of integration by providing all the active high voltage power, control, and protection circuitry required for implementation of a flyback or forward converter on a single monolithic chip. This device is designed for direct operation from a rectified 240 Vac line source and requires a minimum number of external components to implement a complete converter. A description of each of the functional blocks is given below, and the representative block and timing diagrams are shown in Figures 19, 18 and 20. The formula for the charge/discharge current along with the oscillator frequency are given below. The frequency formula is a first order approximation and is accurate for CT values greater than 500 pF. For smaller values of CT, refer to Figure 2. Note that resistor RT also programs the Current Limit Comparator threshold. I 1.0 2.25 I I RC Current Limit Reference 6 RT 4I RD CT 7 Oscillator chgńdscg 4C T Current Limit Comparator and Power Switch The MC33363B uses cycle−by−cycle current limiting as a means of protecting the output switch transistor from overstress. Each on−cycle is treated as a separate situation. Current limiting is implemented by monitoring the output switch current buildup during conduction, and upon sensing an overcurrent condition, immediately turning off the switch for the duration of the oscillator ramp−up period. The Power Switch is constructed as a SENSEFET allowing a virtually lossless method of monitoring the drain current. It consists of a total of 1462 cells, of which 36 are connected to a 8.1 W ground−referenced sense resistor. The Current Sense Comparator detects if the voltage across the sense resistor exceeds the reference level that is present at the inverting input. If exceeded, the comparator quickly resets the PWM Latch, thus protecting the Power Switch. The current limit reference level is generated by the 2.25 I output of the Current Mirror. This current causes a reference voltage to appear across the 405 W resistor. This voltage level, as well as the Oscillator charge/discharge current are both set by resistor RT. Therefore when selecting the values for RT and CT, RT must be chosen first to set the Power Switch peak drain current, while CT is chosen second to set the desired Oscillator frequency. A graph of the Power Switch peak drain current versus RT is shown in Figure 3 with the related formula below. Current Mirror 8 f [ PWM Comparator and Latch The pulse width modulator consists of a comparator with the oscillator ramp voltage applied to the non−inverting input, while the error amplifier output is applied into the inverting input. The Oscillator applies a set pulse to the PWM Latch while CT is discharging, and upon reaching the valley voltage, Power Switch conduction is initiated. When CT charges to a voltage that exceeds the error amplifier output, the PWM Latch is reset, thus terminating Power Switch conduction for the duration of the oscillator ramp−up period. This PWM Comparator/Latch combination prevents multiple output pulses during a given oscillator clock cycle. The timing diagram shown in Figure 18 illustrates the Power Switch duty cycle behavior versus the Compensation voltage. Oscillator and Current Mirror The oscillator frequency is controlled by the values selected for the timing components RT and CT. Resistor RT programs the oscillator charge/discharge current via the Current Mirror 4 I output, Figure 4. Capacitor CT is charged and discharged by an equal magnitude internal current source and sink. This generates a symmetrical 50 percent duty cycle waveform at Pin 7, with a peak and valley threshold of 2.6 V and 0.6 V respectively. During the discharge of CT, the oscillator generates an internal blanking pulse that holds the inverting input of the AND gate Driver high. This causes the Power Switch gate drive to be held in a low state, thus producing a well controlled amount of output deadtime. The amount of deadtime is relatively constant with respect to the oscillator frequency when operating below 1.0 MHz. The maximum Power Switch duty cycle at Pin 16 can be modified from the internal 50% limit by providing an additional charge or discharge current path to CT, Figure 21. In order to increase the maximum duty cycle, a discharge current resistor RD is connected from Pin 7 to ground. To decrease the maximum duty cycle, a charge current resistor RC is connected from Pin 7 to the Regulator Output. Figure 5 shows an obtainable range of maximum output duty cycle versus the ratio of either RC or RD with respect to RT. Regulator Output I 5.4 + R chgńdscg T Blanking Pulse PWM Comparator I Figure 21. Maximum Duty Cycle Modification www.onsemi.com 9 pk + 8.8 ǒ Ǔ R T − 1.077 1000 MC33363B associated power dissipation, commonly used in most off−line converters that utilize a UC3842 type of controller. Rectified ac line voltage is applied to the Startup Input, Pin 1. This causes the MOSFET to enhance and supply internal bias as well as charge current to the VCC bypass capacitor that connects from Pin 3 to ground. When VCC reaches the UVLO upper threshold of 15.2 V, the IC commences operation and the startup MOSFET is turned off. Operating bias is now derived from the auxiliary transformer winding, and all of the device power is efficiently converted down from the rectified ac line. The startup MOSFET will provide a steady current of 1.7 mA, Figure 11, as VCC increases or shorted to ground. The startup MOSFET is rated at a maximum of 400 V with VCC shorted to ground, and 500 V when charging a VCC capacitor of 1000 mF or less. The Power Switch is designed to directly drive the converter transformer and is capable of switching a maximum of 700 V and 1.0 A. Proper device voltage snubbing and heatsinking are required for reliable operation. A Leading Edge Blanking circuit was placed in the current sensing signal path. This circuit prevents a premature reset of the PWM Latch. The premature reset is generated each time the Power Switch is driven into conduction. It appears as a narrow voltage spike across the current sense resistor, and is due to the MOSFET gate to source capacitance, transformer interwinding capacitance, and output rectifier recovery time. The Leading Edge Blanking circuit has a dynamic behavior in that it masks the current signal until the Power Switch turn−on transition is completed. The current limit propagation delay time is typically 262 ns. This time is measured from when an overcurrent appears at the Power Switch drain, to the beginning of turn−off. Output Short−Circuit Condition When the output is short−circuited, the VCC is powered by the internal startup circuit instead of the VCC auxiliary winding. The internal startup circuit turns on and charges up VCC voltage when VCC reaches its UVLO lower threshold of 9.5V. It turns off and VCC voltage drops when VCC reaches its UVLO upper threshold of 15.2V. The device only delivers drain current for the time when VCC goes from 15.2V to 9.5V. No drain current is delivered when VCC goes from 9.5V to 15.2V. As a result, some of the switching cycle is missed as shown in Figure 20. The drain current limit is limited by the cycle−by−cycle current limit. Error Amplifier An fully compensated Error Amplifier with access to the inverting input and output is provided for primary side voltage sensing, Figure 19. It features a typical dc voltage gain of 82 dB, and a unity gain bandwidth of 1.0 MHz with 78 degrees of phase margin, Figure 6. The noninverting input is internally biased at 2.6 V ±3.1% and is not pinned out. The Error Amplifier output is pinned out for external loop compensation and as a means for directly driving the PWM Comparator. The output was designed with a limited sink current capability of 270 mA, allowing it to be easily overridden with a pullup resistor. This is desirable in applications that require secondary side voltage sensing. Regulator A low current 6.5 V regulated output is available for biasing the Error Amplifier and any additional control system circuitry. It is capable of up to 10 mA and has short−circuit protection. This output requires an external bypass capacitor of at least 1.0 mF for stability. Overvoltage Protection An Overvoltage Protection Comparator is included to eliminate the possibility of runaway output voltage. This condition can occur if the control loop feedback signal path is broken due to an external component or connection failure. The comparator is normally used to monitor the primary side VCC voltage. When the 2.6 V threshold is exceeded, it will immediately turn off the Power Switch, and protect the load from a severe overvoltage condition. This input can also be driven from external circuitry to inhibit converter operation. Thermal Shutdown and Package Internal thermal circuitry is provided to protect the Power Switch in the event that the maximum junction temperature is exceeded. When activated, typically at 135°C, the Latch is forced into a ‘reset’ state, disabling the Power Switch. The Latch is allowed to ‘set’ when the Power Switch temperature falls below 105°C. This feature is provided to prevent catastrophic failures from accidental device overheating. It is not intended to be used as a substitute for proper heatsinking. The MC33363B is contained in a heatsinkable plastic dual−in−line package in which the die is mounted on a special heat tab copper alloy lead frame. This tab consists of the four center ground pins that are specifically designed to improve thermal conduction from the die to the circuit board. Figures 16 and 17 show a simple and effective method of utilizing the printed circuit board medium as a heat dissipater by soldering these pins to an adequate area of copper foil. This permits the use of standard layout and mounting practices while having the ability to halve the junction to air thermal resistance. The examples are for a symmetrical layout on a single−sided board with two ounce per square foot of copper. Undervoltage Lockout An Undervoltage Lockout comparator has been incorporated to guarantee that the integrated circuit has sufficient voltage to be fully functional before the output stage is enabled. The UVLO comparator monitors the VCC voltage at Pin 3 and when it exceeds 14.5 V, the reset signal is removed from the PWM Latch allowing operation of the Power Switch. To prevent erratic switching as the threshold is crossed, 5.0 V of hysteresis is provided. Startup Control An internal Startup Control circuit with a high voltage enhancement mode MOSFET is included within the MC33363B. This circuitry allows for increased converter efficiency by eliminating the external startup resistor, and its www.onsemi.com 10 MC33363B PACKAGE DIMENSIONS SO−16WB DW SUFFIX CASE 751N ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− T 16 9 −B− 1 P 0.010 (0.25) M B M 8 J 13X D 0.010 (0.25) M T A S B S F R X 45 _ C −T− S K 9X SEATING PLANE M DIM A B C D F G J K M P R S T MILLIMETERS MIN MAX 10.15 10.45 7.40 7.60 2.35 2.65 0.35 0.49 0.50 0.90 1.27 BSC 0.25 0.32 0.10 0.25 0_ 7_ 10.05 10.55 0.25 0.75 2.54 BSC 3.81 BSC INCHES MIN MAX 0.400 0.411 0.292 0.299 0.093 0.104 0.014 0.019 0.020 0.035 0.050 BSC 0.010 0.012 0.004 0.009 0_ 7_ 0.395 0.415 0.010 0.029 0.100 BSC 0.150 BSC G SENSEFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 11 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MC33363B/D