TH09/2479 TH97/2478 www.eicsemi.com D5SBA10 ~ D5SBA60 SILICON BRIDGE RECTIFIERS RBV25 PRV : 100 ~ 600 Volts Io : 6 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ + 1.0 ± 0.1 17.5 ± 0.5 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free 13.5 ± 0.3 * * * * * * * * IATF 0113686 SGS TH07/1033 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25°C ambient temperature unless otherwise specified. RATING Maximum Reverse Voltage Maximum Average Forward Current SYMBOL D5SBA10 D5SBA20 D5SBA40 D5SBA60 V RM IF(AV) (50Hz Sine wave, R-load) Maximum Peak Forward Surge Current, Tj = 25°C 100 200 400 600 6 (With heatsink, Tc = 110°C) UNIT V A 2.8 (Without heatsink, Ta = 25°C) IFSM 120 A Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C I2 t 60 A2S Maximum Forward Voltage per Diode at I F = 3.0 A VF 1.05 V IR 10 µA Maximum Thermal Resistance, Junction to case RθJC 3.4 (With heatsink) °C/W Maximum Thermal Resistance, Junction to Ambient RθJA 26 (Without heatsink) °C/W TJ 150 °C T STG - 40 to + 150 °C (50Hz sine wave, Non-repetitive 1 cycle peak value) Maximum DC Reverse Current, V R=VRM ( Pulse measurement, Rating of per diode) Operating Junction Temperature Storage Temperature Range Page 1 of 2 Rev. 02 : March 25, 2005 TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( D5SB10 ~ D5SB60 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 120 PEAK FORWARD SURGE CURRENT, AMPS AVERAGE FORWARD OUTPUT CURRENT, AMPS 12 10 8 Sine wave, R-load on heatsink 6 4 2 0 80 90 100 110 120 130 140 100 80 Non-repetitive 60 TJ = 25°C 40 20 0 150 1 2 CASE TEMPERATURE, ( °C) 4 6 10 20 40 60 10 NUMBER OF CYCLES FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - POWER DISSIPATION PER DIODE 14 10 1.0 TL = 25 °C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Sine wave TJ = 150 °C 12 10 8 6 4 2 0 0.1 FORWARD VOLTAGE, VOLTS Page 2 of 2 POWER DISSIPATION , WATTS FORWARD CURRENT, AMPS 100 0 1 2 3 4 5 6 7 AVERAGE RECTIFIED CURRENT, AMPS Rev. 02 : March 25, 2005