TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com RBV600D - RBV610D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 6.0 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 + ~~ 1.0 ± 0.1 10 7.5 7.5 ± 0.2 ±0.2 ±0.2 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.80 grams ( Approximaly ) 17.5 ± 0.5 11 ± 0.2 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Rated isolation-voltage 2000 VAC Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free 13.5 ± 0.3 * * * * * * * * * 20 ± 0.3 FEATURES : 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RBV 600D RBV 601D RBV 602D RBV 604D RBV 606D RBV 608D RBV 610D UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc = 55°C IF(AV) 6.0 A IFSM 300 A I 2t VF 373 1.0 A2s V IR 10 μA RATING Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 6.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range IR(H) 200 μA RѲJC 2.2 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Note : 1. Thermal Resistance from junction to case with units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink. Page 1 of 2 Rev. 07 : May 6, 2013 TH09/2479 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( RBV600D - RBV610D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 TJ = 50 °C PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 6.0 5.0 4.0 3.0 2.0 1.0 HEAT-SINK MOUNTING, Tc 2.6" x 1.4" x 0.06" THK. (6.5cm x 3.5cm x 0.15cm) Al.-PLATE 0 0 25 50 75 100 125 250 200 150 100 50 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 150 1 175 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 10 100 REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES TJ = 100 °C 10 Pulse Width = 300 μs 1 % Duty Cycle 1.0 TJ = 25 °C 0.1 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 07 : May 6, 2013