D3SBA10 ~ D3SBA80 SILICON BRIDGE RECTIFIER + ~ ~ 0.130(3.7) 0.146(3.3) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free 0.134(3.4) 0.122(3.1) 0.603(15.3) 0.579(14.7) FEATURES : * * * * * * * * 0.996 (25.3) 0.972 (24.7) 0.043 (1.1) 0.709 (18) 0.669 (17) C3 0.150 (3.8) 0.134 (3.4) 0.189 (4.8) 0.173 (4.4) 0.383(9.7) 0.367(9.3) PRV : 100 ~ 800 Volts Io : 4.0 Amperes 0.075 (1.9) 0.060 (1.5) 0.035 (0.9) 0.114 (2.9) 0.098 (2.5) 0.303 (7.7) 0.287 (7.3) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 4.28 grams 0.032 (0.8) 0.043 (1.1) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Reverse Voltage Maximum Average Forward Current SYMBOL V RM IF(AV) (50Hz Sine wave, R-load) Maximum Peak Forward Surge Current D3SBA D3SBA D3SBA D3SBA D3SBA 10 20 40 60 80 100 200 400 600 4 (With heatsink, Tc = 108°C) 800 UNIT V A 2.3 (Without heatsink, Ta = 25°C) IFSM 80 A Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C I2 t 32 A2S Maximum Forward Voltage per Diode at I F = 2.0 A. VF 1.05 V IR 10 µA Maximum Thermal Resistance, Junction to case RθJC 5.5 (With heatsink) °C/W Maximum Thermal Resistance, Junction to Ambient RθJA 30 (Without heatsink) °C/W TJ 150 °C T STG - 40 to + 150 °C ( 50 Hz, Half-cycle, Sinwave, Single Shot ) Maximum DC Reverse Current, V R=VRM ( Pulse measurement, Rating of per diode) Operating Junction Temperature Range Storage Temperature Range Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( D3SBA10 ~ D3SBA80) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 5 PEAK FORWARD SURGE CURRENT, AMPS AVERAGE FORWARD OUTPUT CURRENT, AMPS 6 Sine wave, R-load on heatsink 4 3 2 1 0 80 90 100 110 120 130 140 120 Non-repetitive 80 60 40 20 0 1 150 TJ = 25°C 100 2 CASE TEMPERATURE, ( °C) 4 6 10 20 40 60 10 NUMBER OF CYCLES FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - POWER DISSIPATION PER DIODE 14 10 1.0 TL = 25 °C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Sine wave TJ = 150 °C 12 10 8 6 4 2 0 0.1 FORWARD VOLTAGE, VOLTS Page 2 of 2 POWER DISSIPATION , WATTS FORWARD CURRENT, AMPS 100 0 1 2 3 4 5 6 7 AVERAGE RECTIFIED CURRENT, AMPS Rev. 02 : March 25, 2005