General Purpose Transistor MMBT3904-G (NPN) RoHS Device Features SOT-23 -Epitaxial planar die construction 0.120 (3.04) 0.110 (2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055 (1.40) 0.047 (1.20) 2 1 0.080 (2.04) 0.070 (1.78) Collector 3 0.007 (0.18) 0.003 (0.08) 0.044 (1.11) 0.035 (0.89) 0.104 (2.64) 0.083 (2.10) 1 Base 0.004 (0.100) 0.001 (0.013) 0.020 (0.50) 0.015 (0.37) 2 Emitter 0.027 (0.69) 0.014 (0.35) Dimensions in inches and (millimeter) Maximum Ratings (at T =25°C unless otherwise noted) A Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 200 mAdc Symbol Max. Value Unit PD 225 mW 1.8 mW/°C RΘJA 556 °C/W TJ, TSTG -55 to +150 °C Rating Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation FR–5 Board (Note) @TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Note: FR-5 = 1.0 x 0.75 x 0.062 in. Company reserves the right to improve product design , functions and reliability without notice. REV:E Page 1 QW-BTR01 Comchip Technology CO., LTD. General Purpose Transistor Electrical Characteristics (at T =25°C unless otherwise noted) A Characteristics Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC =1mA , (Note) V(BR)CEO 40 V Collector-Base Breakdown Voltage IC =10μA V(BR)CBO 60 V Emitter-Base Breakdown Voltage IE =10μA V(BR)EBO 6.0 V Base Cut-off Current VCE=30V , VEB=3V IBL 50 nA Collector Cut-off Current VCE=30V , VEB=3V ICEX 50 nA ON CHARACTERISTICS (Note) DC Current Gain Collector-Emitter Saturation Voltage (Note) Base-Emitter Saturation Voltage (Note) VCE=1V , IC=0.1mA 40 VCE=1V , IC=1.0mA 70 VCE=1V , IC=10mA hFE 100 VCE=1V , IC=50mA 60 VCE=1V , IC=100mA 30 IC=10mA , IB=1.0mA 300 0.2 VCE(sat) V IC=50mA , IB=5.0mA 0.3 IC=10mA , IB=1.0mA 0.65 0.85 VBE(sat) V IC=50mA , IB=5mA 0.95 SMALL–SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product VCE=20V , IC=10mA , f=100MHZ Output Capacitance VCB=5.0V , IE=0 , f=1.0MHz Cobo 4.0 pF Input Capacitance VBE=0.5V , IC=0 , f=1.0MHz Cibo 8.0 pF Input Impedancen VCE=10V , IC=1.0mA , f=1.0kHz hie 1.0 10 kΩ Voltage Feedback Ratio VCE=10V , IC=1.0mA , f=1.0kHz hre 0.5 8.0 X10 Small - Signal Current Gain VCE=10V , IC=1.0mA , f=1.0kHz hfe 100 400 Output Admittance VCE=10V , IC=1.0mA , f=1.0kHz hoe 1.0 40 μmhos Noise Figure VCE=5V , IC=100μA , f=1.0kHz , RS=1.0kΩ NF 5.0 dB fT 300 MHZ -4 SWITCHING CHARACTERISTICS Delay Time VCC=3.0V , VBE=-0.5V td 35 nS Rise Time IC=10mA , IB1=1.0mA tr 35 nS Storage Time VCC=3.0V , tS 200 nS Fall Time IC=10mA , IB1=IB2=1.0mA tf 50 nS Note: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. Company reserves the right to improve product design , functions and reliability without notice. REV:E Page 2 QW-BTR01 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT3904-G) Fig.2 - Temperature Coefficients Fig.1 - ON Voltages 1.0 1.2 TJ=25°C VBE(sat) @ IC/IB=10 0.5 Voltage (V) 0.8 VBE @ VCE=1.0V 0.6 0.4 Coefficient (mV/°C) 1.0 +25°C to +125°C ΘVC For VCE(sat) 0 -55°C to +25°C -0.5 +25°C to +125°C -1.0 -55°C to +25°C VCE(sat) @ IC/IB=10 -1.5 0.2 -2.0 0 1.0 10 100 200 0 20 40 60 80 100 120 140 160 180 200 IC - Collector current (mA) IC - Collector current (mA) Fig.3 - Turn-On Time Fig.4 - Rise Time 500 400 300 500 400 300 IC/IB=10 VCC = 40V IC/IB=10 200 tr - Rise Time (ns) 200 100 Time (ns) ΘVB For VBE(sat) 50 tr @VCC = 3.0V 40V 20 100 50 20 15V 10 10 2.0V td @VOB = 0V 5 5 1.0 10 1.0 100 200 Fig.5 - Collector Saturation Region 100 200 Fig.6 - Capacitance 10 1.0 7 0.8 Capacitance (pF) VCE - Collector-Emitter voltage (V) 10 Ic - Collector current (mA) Ic - Collector current (mA) 0.6 0.4 10 mA 30 mA 100 mA 5 4 Cibo 3 2 Cobo 0.2 IC=1.0 mA 0 0.01 TJ=25°C 0.1 1.0 10 1 0.1 IB - Base current (mA) 1 10 40 Reverse bias voltage (V) Company reserves the right to improve product design , functions and reliability without notice. REV:E Page 3 QW-BTR01 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.10 ± 0.10 2.85 ± 0.10 1.40 ± 0.10 1.55 ± 0.10 178 ± 1 50.0 MIN. 13.0 ± 0.20 (inch) 0.122 ± 0.004 0.112 ± 0.004 0.055 ± 0.004 0.061 ± 0.004 7.008 ± 0.04 1.969 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.30 14.4 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 ± 0.008 0.567 MAX. REV:E Page 4 QW-BTR01 Comchip Technology CO., LTD. General Purpose Transistor Product marking code Marking Code ∑ : Month Code 3 Marking Code Part Number MMBT3904-G 1AM ∑ 1AM ∑ 1AM X 1 XX 2 “ • ” or “••” or “–” :Traceablity code Month Code: Month Odd Year (per A.D.) Even Year (per A.D.) Month Odd Year (per A.D.) Even Year (per A.D.) Jan 1 E Jul 7 N Feb 2 F Aug 8 P Wer 3 H Sep 9 U Apr 4 J Oct T X May 5 K Nov V Y Jun 6 L Dec C Z Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 0.90 0.035 C 0.95 0.037 D 2.00 0.079 B D A E E C 0.114 2.90 Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:E Page 5 QW-BTR01 Comchip Technology CO., LTD.