2SC2873O-G

General Purpose Transistor
2SC2873-G Series (NPN)
RoHS Device
Features
- Small flat package
- High speed switching time.
- Low collector-emitter saturation voltage.
SOT-89-3L
Circuit Diagram
0.181(4.60)
0.173(4.40)
Collector
2
1 : BASE
2 : COLLECTOR
3 : EMITTER
0.061(1.55)
REF.
1
Base
0.102(2.60)
0.091(2.30)
1
3
Emitter
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Base voltage
VCBO
50
V
Collector-Emitter voltage
VCEO
50
V
Emitter-Base voltage
VEBO
5
V
Parameter
Collector current
IC
2
A
Collector power dissipation
PD
500
mW
RθJA
250
°C/W
Thermal resistance from
junction to ambient
Junction temperature
TJ
150
°C
Storage temperature
Tstg
-55~+150
°C
0.020(0.52)
0.013(0.32)
0.167(4.25)
0.155(3.94)
3
2
0.023(0.58)
0.016(0.40)
0.060(1.50)
TYP.
0.118(3.00)
TYP.
0.063(1.60)
0.055(1.40)
0.047(1.20)
0.035(0.90)
0.017(0.44)
0.014(0.35)
Dimensions in inches and (millimeter)
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base breakdown voltage
IC =100μA , IE=0
V(BR)CBO
50
V
Collector-Emitter breakdown voltage
IC =1mA , IB=0
V(BR)CEO
50
V
Emitter-Base breakdown voltage
IE =100μA , IC=0
V(BR)EBO
5
V
Collector cut-off current
VCB=50V , IE=0
ICBO
0.1
µA
Emitter cut-off current
VEB=5V , IC=0
IEBO
0.1
µA
VCE=2V , IC=0.5mA
hFE(1)
70
VCE=2V , IC=2mA
hFE(2)
20
Collector-Emitter saturation voltage
IC=1A , IB=50mA
VCE(sat)
0.5
V
Base-Emitter saturation voltage
IC=1A , IB=50mA
VBE(sat)
1.2
V
Transition frequency
VCE=2V , IC=0.5A
fT
120
MHZ
Collector output capacitance
VCB=10V, IE=0 , F=1MHZ
Cob
30
PF
DC current gain
240
Classification Of hFE
Part No.
2SC2873O-G
2SC2873Y-G
Range
70-140
120-240
Marking
MO
MY
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General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (2SC2873-G)
Fig.2 - hFE— IC
Fig.1 - Static Characteristic
1000
1000
IB=4.5mA
900
Collector Current, (mA)
IB=3.5mA
700
IB=3mA
600
IB=2.5mA
500
IB=2mA
400
300
IB=1.5mA
200
IB=1mA
DC Current Gain, hFE
IB=4mA
800
100
Ta=100°C
200
Ta=25°C
100
IB=500uA
0
0
0
2
4
6
8
10
12
14
1
16
10
100
Collector-Emitter Voltage, (V)
Collector Current , (mA)
Fig.3 - VBEsat — IC
Fig.4- VCEsat — IC
100
Collector-Emtter Saturation Voltage
,VCEsat (mV)
Base-Emitter Saturation Voltage
, VBEsat (mV)
β=10
300
10
100
Ta=100°C
Ta=25°C
β=10
10
10
1000
1000
100
Collector Current, Ic(mA)
Collector Current, Ic (mA)
Fig.5 - IC — VBE
Fig.6 - Cob/Cib — VCB/VEB
1000
Capacitance, (pF)
1000
100
Ta=100°C
Ta=25°C
10
1
0
0.2
0.4
0.6
0.8
Base-Emmiter Voltage, VBE(V)
1.0
100
10
1
0.1
1
10
20
Reverse Voltage , (V)
Company reserves the right to improve product design , functions and reliability without notice.
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1000 2000
1000
1000
Collector Current, (mA)
COMMON EMITTER
-500uA
VCE=2V
COMMON
-500uA
EMITTER
-450uA
Ta=25°C
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General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (2SC2873-G)
Fig.7 - PC — Ta
Collector Power Dissipation, (mW)
600
500
400
300
200
100
0
0
25
50
75
100
125
150
Ambient Temperature , Ta (°C)
Suggested PAD Layout
A
SOT-89-3L
B
SIZE
(mm)
(inch)
A
2.60
0.102
B
1.40
0.055
C
4.40
0.173
D
3.20
0.126
E
1.90
0.075
F
1.40
0.055
G
0.80
0.032
H
0.90
0.035
I
1.50
0.059
C
D
45°
E
F
G
H
I
Standard Packaging
REEL PACK
Case Type
SOT-89-3L
REEL
Reel Size
( pcs )
(inch)
1,000
7
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General Purpose Transistor
Reel Taping Specification
12
o
0
D2
D1 D
W1
SOT-89-3L
SOT-89-3L
SYMBOL
A
B
C
d
D
D1
D2
(mm)
4.85 ± 0.10
4.45 ± 0.10
1.85 ± 0.10
1.50 + 0.10
180 ± 2.00
60.00 ± 1.00
R32.00 ± 1.00
(inch)
0.191 ± 0.004
0.175± 0.004
0.073 ± 0.004
0.059 + 0.004
7.087 ± 0.079
2.362 ± 0.039
1.260 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
5.50 ± 0.10
8.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
12.00 + 0.30 /–0.10
16.50 ± 1.00
(inch)
0.069 ± 0.004
0.217 ± 0.004
0.315 ± 0.004
0.158 ± 0.004
0.079 ± 0.004 0.472 + 0.012 /–0.004 0.650 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
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