General Purpose Transistor MJE2955-G (PNP) RoHS Device TO-220-3L Features 0.406(10.31) 0.394(10.01) - General Purpose and Switching Application 0.114(2.89) 0.102(2.59) 0.184(4.67) 0.176(4.47) 0.054(1.37) 0.046(1.17) 0.155(3.935) 0.147(3.735) 0.012(0.300) Max. 0.491(12.46) 0.475(12.06) 0.350(8.90) 0.335(8.50) 1 2 3 0.156(3.96) 0.140(3.56) 0.054(1.37) 0.046(1.17) 0.543(13.80) 0.528(13.40) 0.036(0.91) 0.028(0.71) 2. Emitter 3. Collector 0.021(0.53) 0.012(0.31) 0.100(2.54) Typ. 1. Base 0.204(5.18) 0.196(4.98) 0.111(2.82) 0.099(2.52) Dimensions in inches and (millimeter) Maximum Ratings (at TA=25°C unless otherwise noted) Symbol Value Unit Collector-base voltage VCBO -70 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -10 A Collector power dissipation PC 2 W Junction temperature TJ 150 °C TSTG -55 to +150 °C Parameter Storage temperature range Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Min Max Unit Collector-base breakdown voltage IC =-10mA , IE=0 V(BR)CBO -70 V Collector-emitter breakdown voltage IC =-200mA , IB=0 V(BR)CEO -60 V Emitter-base breakdown voltage IE =-10mA , IC=0 V(BR)EBO -5 V Collector cut-off current VCB=-70V , IE=0 ICBO -1 mA Emitter cut-off current VEB=-5V , IC=0 IEBO -5 mA VCE=-4V , IC=-4A hFE(1)* 20 VCE=-4V , IC=-10A hFE(2)* 5 100 DC current gain IC=-4A , IB=-0.4A VCE(sat)* -1.1 V IC=-10A , IB=-3.3A VCE(sat)* -8 V VBE -1.8 V Collector-emitter saturation voltage Base-emitter voltage VCE=-4V , IC=-4A Transition frequency VCE=-10V , IC=-0.5A fT 2 Company reserves the right to improve product design , functions and reliability without notice. QW-BTR41 MHZ REV:A Page 1 General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MJE2955-G ) Fig.2 - hFE — IC Fig.1 - Static Characteristic 1000 COMMON EMITTER Ta =25°C -5 DC Current Gain, hFE Collector Current, (A ) -6 -4 -3 -2 -1 100 -0 10 -0 -1 -2 -3 -4 -5 -7 -6 -8 -9 -10 -1 Collector- Emitter Voltage, (V) Base-Emitter Saturation Voltage, VBEsat (mV) Collector Emitter Saturation Voltage, VCEsat (mV) Ta=100°C Ta=25°C β=10 -100 -1000 -1400 -1300 -1200 -1100 -1000 -900 -800 -600 -500 Ta=100°C -400 -300 β=10 -200 -1 -10000 -100 -10 -1000 Fig.6 - COb/Cib — VCB/VEB Fig.5 - IC — VBE 10000 Capacitance, (pF) -1000 -100 -10 -1 -0.1 -400 -600 -800 -10000 Collector Current, (mA) -10000 Collector Current, (mA) Ta=25°C -700 Collector Current, (mA) -200 -10000 Fig.4 - VBEsat — IC Fig.3 - VCEsat — IC -10 -10 -1000 Collector Current, (mA) -1000 -100 -100 -10 -1000 -1200 Base-Emmiter Voltage, (mA) f=1MHZ I E=O/IC=0 Ta =25°C Cib 1000 Cob 100 10 -0.1 -1 -10 -30 Reverse Voltage, (V) Collector Power Dissipation, (mW) Fig.7 - PC — Ta 2500 2000 1500 1000 500 0 0 25 50 75 100 125 150 Ambient Temperature, (°C) Company reserves the right to improve product design , functions and reliability without notice. QW-BTR41 REV:A Page 2 General Purpose Transistor Marking Code Part Number Marking Code MJE2955-G MJE2955 MJE2955 031 MJE2955: Marking Code 031: Control Code Suggested PAD Layout TO-220-3L SIZE (mm) (inch) A 1.00 0.039 B 1.20 0.047 C 2.54 0.100 C A B Standard Packaging TUBE PACK Case Type TO-220-3L TUBE Inner BOX ( pcs ) ( pcs ) 50 1,000 Company reserves the right to improve product design , functions and reliability without notice. QW-BTR41 REV:A Page 3