General Purpose Transistor FMMT493-G (NPN) RoHS Device Features SOT-23 - Complementary type FMMT593 0.118(3.00) 0.110(2.80) - Low saturation voltage - High hFE Max. 300@250mA 3 0.055(1.40) 0.047(1.20) - IC = 1A 1 2 0.079(2.00) 0.071(1.80) Circuit Diagram - 1 : BASE Collector 3 - 2 : EMITTER - 3 : COLLECTOR 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.035(0.90) 1 Base 0.020(0.50) 0.012(0.30) 2 Emitter 0.100(2.55) 0.089(2.25) 0.004(0.10) 0.000(0.00) Dimensions in inches and (millimeter) Maximum Ratings (at T =25°C unless otherwise noted) A Symbol Value Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 1000 mA Collector power dissipation PC 250 mW RθJA 500 °C/W Junction temperature range TJ 150 °C Storage temperature range Tstg -55~+150 °C Parameter Thermal resistance from junction to ambient Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR47 Page 1 General Purpose Transistor Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Conditions Symbol Min Typ Max Unit Collector-base breakdown voltage IC = 100μA , IE = 0 V(BR)CBO 120 V Collector-emitter breakdown voltage IC = 10mA , IB = 0 V(BR)CEO 100 V Emitter-base breakdown voltage IE = 100μA , IC = 0 V(BR)EBO 5 V Collector cut-off current VCB = 100V , IE = 0 ICBO 0.1 µA Collector cut-off current VCES = 100V , IE = 0 ICES 0.1 µA Emitter cut-off current VEB = 4V , IC = 0 IEBO 0.1 µA VCE = 10V , IC = 1mA hFE(1)* 100 VCE = 10V , IC = 250mA hFE(2)* 100 VCE = 10V , IC = 0.5A hFE(3)* 60 VCE = 10V , IC = 1A hFE(4)* 20 300 DC current gain IC = 500mA , IB = 50mA VCE(sat) 1* 0.3 V IC = 1A , IB = 100mA VCE(sat) 2* 0.6 V Base-emitter saturation voltage IC = 1A , IB = 100mA VBE(sat)* 1.15 V Base-emitter voltage VCE = 10V , IC = 1A VBE* 1 V Transition frequency VCE = 10V , IC = 50mA , f = 100MHZ Collector output capacitance VCB = 10V, IE = 0 , f = 1MHZ Collector-emitter saturation voltage fT 150 MHZ 10 Cob PF *Pulse test: pulse width ≤ 300µs, duty cycles ≤ 2.0% RATING AND CHARACTERISTIC CURVES ( FMMT493-G ) Fig.2 - hFE — IC Fig.1 - Static Characteristic 8 400 VCE = 10V 350 6 IB=30uA DC Current Gain, hFE Collector Current, IC (mA) COMMON -500uA EMITTER -450uA Ta=25°C IB=27uA IB=24uA IB=21uA 4 IB=18uA IB=15uA IB=12uA 2 Ta=100°C 300 250 Ta=25°C 200 IB=9uA 150 IB=6uA IB=3uA 0 100 0 2 4 6 8 10 12 14 1 Collector-Emitter Voltage, VCE (V) 10 100 1000 Collector Current , IC (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR47 Page 2 General Purpose Transistor RATING AND CHARACTERISTIC CURVES ( FMMT493-G ) Fig.4- VCEsat — IC Fig.3 - VBEsat — IC 1000 Collector-Emtter Saturation Voltage ,VCEs at (mV) Base-Emitter Saturation Voltage , VBEsat (mV) 1000 800 Ta=25°C 600 Ta=100°C 400 β=10 100 Ta=100°C Ta=25°C β=10 200 0.1 1 10 100 10 0.1 1000 10 1 Collector Current, Ic (mA) 1000 Collector Current, Ic (mA) Fig.6 - IC — VBE Fig.5 - fT — IC 180 1000 160 Collector Current, IC (mA) Transition Frequency, fT (MHZ) 100 140 120 100 80 60 40 20 100 Ta=100°C Ta=25°C 10 1 VCE=10V Ta=25°C 0 VCE=10V 0.1 0 20 40 60 80 100 Collector Current, IC (mA) 100 200 300 400 500 600 700 800 900 1000 Base-Emmiter Voltage, VBE (mV) Fig.7 - PC — Ta Collector Power Dissipation, PC (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature, Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR47 Page 3 General Purpose Transistor Reel Taping Specification P1 XXX B F E d P0 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 / - 0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 / - 0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR47 Page 4 General Purpose Transistor Marking Code 3 Part Number Marking Code FMMT493-G 493 XXX 1 2 xxx = Product type marking code Suggested PAD Layout B SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 0.60 0.024 C 1.90 0.075 D 2.02 0.080 E 2.82 0.111 A D E C Standard Packaging Case Type SOT-23 Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR47 Page 5