COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G (NPN) RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature range: TJ, TSTG= -55 to +150 OC SOT-323 0.087 (2.20) 0.079 (2.00) 3 0.053(1.35) 0.045(1.15) 1 2 0.055 (1.40) Mechanical data 0.047 (1.20) 0.096 (2.45) 0.085 (2.15) 0.039 (1.00) 0.035 (0.90) -Case: SOT-323, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. -Approx. weight: 0.008 grams 0.006 (0.15) 0.003 (0.08) 0.004 (0.10) max 0.016 (0.40) 0.008 (0.20) Circuit diagram 0.018 (0.46) 0.010 (0.26) -1.BASE -2.EMITTER -3.COLLECTOR 3 Dimensions in inches and (millimeter) 1 Maximum Ratings (at Ta=25 2 O C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage BC846W-G BC847W-G BC848W-G VCBO 80 50 30 V Collector-Emitter Voltage BC846W-G BC847W-G BC848W-G VCEO 65 45 30 V Emitter-Base Voltage BC846W-G / BC847W-G BC848W-G VEBO 6 5 V Collector Current -Continuous IC 0.1 A Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 O C TSTG -55 to +150 O C Storage Temperature Range REV:A Page 1 QW-BTR35 Comchip Technology CO., LTD. COMCHIP Small Signal Transistor SMD Diodes Specialist Electrical Characteristics (BC846AW-G Thru. BC848CW-G, @TA= 25O C unless otherwise specified) Symbol Parameter Test Conditions MIN TYP MAX Units Collector-Base Breakdown Voltage BC846W-G BC847W-G BC848W-G VCBO IC =10μA , IE=0 80 50 30 V Collector-Emitter Breakdown Voltage BC846W-G BC846W-G BC848W-G VCEO IC =10mA , IB=0 65 45 30 V BC846W-G, BC847W-G BC848W-G VEBO IE =10μA , IC=0 6 5 V ICBO VCB=30V Emitter-Base Break Voltage Collector Cutoff Current DC Current Gain BC846AW,847AW,848AW BC846BW,847BW,848BW BC847CW,848CW BC846AW,847AW,848AW BC846BW,847BW,848BW BC847CW,848CW Collector-Emitter Saturation Voltage hFE VCE =5V , IC=2mA VBE(sat) 220 450 800 110 200 420 0.25 0.60 IC =10mA , IB=0.5mA IC =100mA , IB=0.5mA IC =10mA , IB=0.5mA IC =100mA , IB=5mA VCE =5V , IC=2mA VCE =5V , IC=10mA nA 90 150 270 VCE =5V , IC=10μA VCE(sat) Base-Emitter Saturation Voltage 15 580 0.7 0.9 660 V V 700 770 Base-Emitter Voltage VBE(on) Transition Frequency fT VCE=5V , IC=10mA f=100MHZ Cob VCB =10V , f=1MHZ 4.5 pF NF VCE =5V , IC=0.2mA f =1KHZ , RS=2KΩ BW=200Hz 10 4 dB Collector Output Capacitance Noise Figure BC846AW,847AW,848AW BC846BW,847BW,848BW BC847CW,848CW 100 mV MHZ REV:A Page 2 QW-BTR35 Comchip Technology CO., LTD. COMCHIP Small Signal Transistor SMD Diodes Specialist Electrical Characteristic Curves (BC846AW-G Thru. BC848CW-G) Fig.1 Normalized DC Current Gain Fig.2 Saturation and On voltage 2.0 1 O VBE(SAT)@IC/IB=10 0.8 1.0 V, Voltage (V ) hFE,Normalized DC Current Gan TA=25 C VCE=10V 0.6 VBE(ON)@VCE=10V 0.4 0.2 VCE(SAT)@IC/IB=10 0.2 0.2 1 10 0 0.1 100 200 1 IC, Collector Current (mA) IC, Collector Current (mAdc) Fig.3 Collector Saturation Region Fig.4 Base-Emitter Temperature Coefficient 2 00 mA 0m A 1.2 TA=25 OC 0.8 0.4 0 0.01 0.1 O -55 to +125 C O IC = IC = 1 0 IC=50mA IC=20mA θVB, Te mperature Coefficient ( mV / C) 0.8 IC=10mA V CE, Collector-Emitter Voltage (V ) 2 1.6 1 1.2 1.6 2.0 2.4 2.8 10 20 0.1 1 10 100 IC, Collector Current (mA) IB, Base Current (mA) Fig.5 Capacitance Fig.6 Current Gain Bandwidth Product 400 f T , C u r rent- Gain-Bandwidth Product (MHZ) 10 O (p F) C, Capa ciance t TA=25 C Cib Cob 1 0.4 100 10 1 10 40 O TA=25 C VCE=10V 100 20 0.5 VR, Reverse Voltage (V) 1 10 50 IC, Collector Current (mA) REV:A Page 3 QW-BTR35 Comchip Technology CO., LTD. COMCHIP Small Signal Transistor SMD Diodes Specialist Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOT-323 SOT-323 SYMBOL A B C d D D1 D2 (mm) 2.25 ± 0.10 2.55 ± 0.10 1.19 ± 0.10 1.55 + 0.10 178 ± 1.00 54.40 ± 0.40 13.0 ± 0.20 (inch) 0.089 ± 0.004 0.100 ± 0.004 0.047 ± 0.004 0.061 + 0.004 7.008 ± 0.039 2.142 ± 0.016 0.512 ± 0.008 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 9.50 ± 1.00 (inch) 0.069 ± 0.004 0.138± 0.002 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039 REV:A Page 3 QW-BTR35 Comchip Technology CO., LTD. COMCHIP Small Signal Schottky Diodes SMD Diodes Specialist Marking Code 3 Marking Code Part Number BC846AW-G 1A BC847AW-G 1E BC848AW-G 1J BC846BW-G 1B BC847BW-G 1F BC848BW-G 1K BC847CW-G 1G BC848CW-G 1L XX 1 2 xx = Product type marking code Suggested PAD Layout SOT-323 SIZE (mm) (inch) A 0.80 0.031 B 1.30 0.051 C 1.94 0.076 D 2.74 0.108 A C D B Standard Package Qty per Reel Reel Size (Pcs) (inch) 3000 7 Case Type SOT-323 REV:A Page 1 QW-BTR35 Comchip Technology CO., LTD.