MMBT5401-G

General Purpose Transistor
MMBT5401-G (PNP)
RoHS Device
Features
SOT-23
-Epitaxial planar die construction.
-Complementary NPN type available (MMBT5551-G).
-Ideal for medium power amplification and switching.
0.119(3.00)
0.110(2.80)
3
0.056(1.40)
0.047(1.20)
Diagram:
1
2
0.006(0.15)
0.079(2.00)
Collector
3
0.002(0.05)
0.071(1.80)
0.041(1.05)
0.100(2.55)
0.035(0.90)
0.089(2.25)
1
Base
0.004(0.10) max
0.020(0.50)
0.008(0.20) min
0.012(0.30)
2
Emitter
Marking: 2L
Dimensions in inches and (millimeter)
Maximum Ratings (at T =25°C unless otherwise noted)
A
Symbol
Value
Unit
Collector-base voltage
VCBO
-160
V
Collector-emitter voltage
VCEO
-150
V
Emitter-base voltage
VEBO
-5
V
Collector current - continuous
IC
-0.6
A
Collector dissipation
PC
0.3
W
TJ, TSTG
-55 ~ +150
Parameter
Junction and storage temperature
O
C
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Conditions
Symbol
Min
Max
Unit
V
V
Collector-base breakdown voltage
IC=-100μA, IE=0
V(BR)CBO
-160
Collector-emitter breakdown voltage
IC=-1mA, IB=0
V(BR)CEO
-150
V
Emitter-base breakdown voltage
IE=-10μA, IC=0
V(BR)EBO
-5
V
Collector cut-off current
VCB=-120V, IE=0
ICBO
-0.1
μA
Emitter cut-off current
VEB=-4V, IC=0
IEBO
-0.1
μA
VCE=-5V, IC=-1mA
hFE(1)
80
VCE=-5V, IC=-10mA
hFE(2)
100
VCE=-5V, IC=-50mA
hFE(3)
50
Collector-emitter saturation voltage
IC=-50mA, IB=-5mA
VCE(sat)
-0.5
V
Base-emitter saturation voltage
IC=-50mA, IB=-5mA
VBE(sat)
-1
V
Transition frequency
VCE=-5V, IC=-10mA, f=30MHz
DC current gain
fT
100
200
Mhz
REV:B
Page 1
QW-BTR18
Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (MMBT5401-G)
Fig.2 Collector Emitter Saturation Voltage
vs. Collector Current
Fig.1 Max Power Dissipation vs.
Ambient Temperature
400
10
VCE(sat), Collector to Emitter
Saturation Voltage (V)
PD, Power Dissipation (mW)
350
300
250
200
150
100
1.0
O
Ta=150 C
0.1
O
Ta=-50 C
O
Ta=25 C
50
0
0.01
0
25
50
75
100
125
150
175
1
100
1000
IC, Collector Current (mA)
Fig.3 DC Current Gain vs. Collector Current
Fig.4 Base Emitter Voltage vs. Collector Current
10000
1.0
VCE=5V
VBE(ON), Base Emitter Voltage (V)
VCE=5V
hFE, DC Current Gain (Normalized)
10
Ta, Ambient Temperature (°C)
1000
O
Ta=150 C
100
O
Ta=25 C
O
Ta=-50 C
10
1
1
10
100
1000
Ta=-50 OC
O
Ta=25 C
0.5
O
Ta=150 C
0.1
0.1
IC, Collector Current (mA)
1.0
10
100
IC, Collector Current (mA)
Fig.5 Gain Bandwidth Product vs. Collector Current
1000
fT, Gain Bandwidth Product (Mhz)
VCE=10V
100
10
1
1
10
100
IC, Collector Current (mA)
REV:B
Page 2
QW-BTR18
Comchip Technology CO., LTD.
General Purpose Transistor
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
P
C
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.10 ± 0.10
2.85 ± 0.10
1.40 ± 0.10
1.55 ± 0.10
178 ± 1
50.0 MIN.
13.0 ± 0.20
(inch)
0.122 ± 0.004
0.112 ± 0.004
0.055 ± 0.004
0.061 ± 0.004
7.008 ± 0.04
1.969 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
8.00 ± 0.30
14.4 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.002
0.315 ± 0.012
0.567 MAX.
REV:B
Page 3
QW-BTR18
Comchip Technology CO., LTD.
General Purpose Transistor
Marking Code
3
Part Number
Marking Code
MMBT5401-G
2L
2L
1
2
Suggested PAD Layout
SOT-23
A
SIZE
(mm)
(inch)
A
0.80
0.031
B
1.90
0.075
C
2.02
0.080
D
2.82
0.111
C
D
B
Standard Packaging
REEL PACK
Case Type
SOT-23
REEL
Reel Size
( pcs )
(inch)
3,000
7
REV:B
Page 4
QW-BTR18
Comchip Technology CO., LTD.