COMCHIP BC848A-G

Small Signal Transistor
BC846A-G Thru. BC848C-G (NPN)
RoHS Device
Features
-Power dissipation
O
PCM: 0.20W (@TA=25 C)
-Collector current
ICM: 0.1A
-Collector-base voltage
VCBO: BC846=80V
BC847=50V
BC848=30V
-Operating and storage junction temperature
range: TJ, TSTG= -65 to +150 OC
SOT-23
0.118(3.00)
0.110(2.80)
3
0.055(1.40)
0.047(1.20)
1
2
0.079(2.00)
0.071(1.80)
Mechanical data
0.006(0.15)
0.003(0.08)
-Case: SOT-23, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Approx. weight: 0.008 grams
0.041(1.05)
0.035(0.90)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Circuit diagram
-1.BASE
-2.EMITTER
-3.COLLECTOR
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
3
1
Maximum Ratings (at Ta=25
2
O
C unless otherwise noted)
Parameter
Symbol
Value
UNIT
Collector-Base Voltage
BC846-G
BC847-G
BC848-G
VCBO
80
50
30
V
Collector-Emitter Voltage
BC846-G
BC847-G
BC848-G
VCEO
65
45
30
V
VEBO
6
V
Collector Current -Continuous
IC
0.1
A
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
°C
TSTG
-65 to +150
°C
Emitter-Base Voltage
Storage Temperature Range
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristics
(BC846A-G Thru. BC848C-G, @TA= 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BC846-G
BC847-G
BC848-G
VCBO
IC =10μA , IE=0
80
50
30
V
Collector-Emitter Breakdown Voltage
BC846-G
BC847-G
BC848-G
VCEO
IC =10mA , IB=0
65
45
30
V
VEBO
IE =10μA , IC=0
6
V
Emitter-Base Break Voltage
Collector Cut-off Current
BC846-G
BC847-G
BC848-G
ICBO
VCB=70V , IE=0
VCB=50V , IE=0
VCB=30V , IE=0
0.1
µA
Collector Cut-off Current
BC846-G
BC847-G
BC848-G
ICEO
VCB=60V , IE=0
VCB=45V , IE=0
VCB=30V , IE=0
0.1
µA
IEBO
VEB=5V , IC=0
0.1
µA
hFE
VCE =5V , IC=2mA
Emitter cut-off current
DC Current Gain
BC846A,BC847A,BC848A
BC846B,BC847B,BC848B
BC847C,BC848C
110
200
420
220
450
800
Collector-Emitter Saturation Voltage
VCE(sat) IC =100mA , IB=5mA
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC =100mA , IB=5mA
1.1
V
fT
VCE=5V , IC=10mA
f=100MHZ
Cob
VCB =10V , f=1MHZ
Transition Frequency
Collector Output Capacitance
100
MHZ
4.5
pF
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QW-BTR31
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC846A-G Thru. BC848C-G)
Fig.2- hFE — IC
Fig.1- Static Characteristic
1000
COMMON
EMITTER
-450uA
Ta=25°C
60uA
COMMON EMITTER
VCE=5V
54uA
16
DC Current Gain, hFE
Collector Current, Ic ( mA )
20
48uA
42uA
12
36uA
30uA
8
24uA
18uA
4
Ta=100°C
Ta=25°C
300
12uA
IB=6uA
100
0.1
0
0
1
3
5
4
6
1
100
Ta=100°C
Ta=25°C
β=20
1
10
1000
800
Ta=25°C
Ta=100°C
600
β=20
400
0.1
100
1
Collector Current, Ic ( mA )
Fig.5- IC
— VBE
Fig.6- Cob/Cib
Ta=100°C
Ta=25°C
1
0.6
0.8
Cib
10
Cob
1
0.1
0.1
1.0
Base-Emitter Voltage, VBE ( V )
1
10
20
Reverse Bias Voltage, V ( V )
Fig.8- PC — Ta
Fig.7- fT — IC
1000
250
VCE = 5V
Ta=25°C
Collector Power Dissipation,
PC (mW)
Transition Frequency , fT (MHZ)
— VCB/VEB
f=1MHz
IE = 0/Ic =0
Ta = 25°C
10
0.4
100
100
Common Emitter
VCE = 5V
0.1
0.1
10
Collector Current, Ic (mA)
Capacitance, C ( pF )
Collector Current, Ic ( mA )
100
100
Fig.4- VBEsat — IC
BASE-Emitter Saturation Voltage,
, VBEsat (V)
Collector-Emtter Saturation Voltage
, VCEsat (mV)
Fig.3- VCEsat — IC
1000
10
0.1
10
Collector Current, Ic ( mA )
Collector-Emitter Voltage, VCE (V)
100
10
1
10
50
200
150
100
50
0
0
Collector Current, Ic (mA)
25
50
75
100
125
150
Ambient Temperature, Ta (°C)
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QW-BTR31
Comchip Technology CO., LTD.
Small Signal Transistor
Reel Taping Specification
P1
d
T
B
W
F
E
P0
C
12
o
0
D2
D1 D
W1
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 ± 0.10
178 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 ± 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039
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Page 4
QW-BTR31
Comchip Technology CO., LTD.
Small Signal Schottky Diodes
Marking Code
Part Number
Marking Code
BC846A-G
1A
BC847A-G
1E
BC848A-G
1J
BC846B-G
1B
BC847B-G
1F
BC848B-G
1K
BC847C-G
1G
BC848C-G
1L
3
XX
1
2
xx = Product type marking code
Suggested PAD Layout
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
1.90
0.075
C
2.02
0.080
D
2.82
0.111
A
C
D
B
Standard Packaging
Case Type
SOT-23
Qty Per Reel
Reel Size
(Pcs)
(inch)
3,000
7
REV:B
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QW-BTR31
Comchip Technology CO., LTD.