Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC SOT-23 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) 1 2 0.079(2.00) 0.071(1.80) Mechanical data 0.006(0.15) 0.003(0.08) -Case: SOT-23, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. -Approx. weight: 0.008 grams 0.041(1.05) 0.035(0.90) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.020(0.50) 0.012(0.30) Circuit diagram -1.BASE -2.EMITTER -3.COLLECTOR 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) 3 1 Maximum Ratings (at Ta=25 2 O C unless otherwise noted) Parameter Symbol Value UNIT Collector-Base Voltage BC846-G BC847-G BC848-G VCBO 80 50 30 V Collector-Emitter Voltage BC846-G BC847-G BC848-G VCEO 65 45 30 V VEBO 6 V Collector Current -Continuous IC 0.1 A Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 °C TSTG -65 to +150 °C Emitter-Base Voltage Storage Temperature Range Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 1 QW-BTR31 Comchip Technology CO., LTD. Small Signal Transistor Electrical Characteristics (BC846A-G Thru. BC848C-G, @TA= 25 °C unless otherwise specified) Symbol Parameter Test Conditions MIN TYP MAX UNIT Collector-Base Breakdown Voltage BC846-G BC847-G BC848-G VCBO IC =10μA , IE=0 80 50 30 V Collector-Emitter Breakdown Voltage BC846-G BC847-G BC848-G VCEO IC =10mA , IB=0 65 45 30 V VEBO IE =10μA , IC=0 6 V Emitter-Base Break Voltage Collector Cut-off Current BC846-G BC847-G BC848-G ICBO VCB=70V , IE=0 VCB=50V , IE=0 VCB=30V , IE=0 0.1 µA Collector Cut-off Current BC846-G BC847-G BC848-G ICEO VCB=60V , IE=0 VCB=45V , IE=0 VCB=30V , IE=0 0.1 µA IEBO VEB=5V , IC=0 0.1 µA hFE VCE =5V , IC=2mA Emitter cut-off current DC Current Gain BC846A,BC847A,BC848A BC846B,BC847B,BC848B BC847C,BC848C 110 200 420 220 450 800 Collector-Emitter Saturation Voltage VCE(sat) IC =100mA , IB=5mA 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC =100mA , IB=5mA 1.1 V fT VCE=5V , IC=10mA f=100MHZ Cob VCB =10V , f=1MHZ Transition Frequency Collector Output Capacitance 100 MHZ 4.5 pF REV:B Page 2 QW-BTR31 Comchip Technology CO., LTD. Small Signal Transistor Electrical Characteristic Curves (BC846A-G Thru. BC848C-G) Fig.2- hFE — IC Fig.1- Static Characteristic 1000 COMMON EMITTER -450uA Ta=25°C 60uA COMMON EMITTER VCE=5V 54uA 16 DC Current Gain, hFE Collector Current, Ic ( mA ) 20 48uA 42uA 12 36uA 30uA 8 24uA 18uA 4 Ta=100°C Ta=25°C 300 12uA IB=6uA 100 0.1 0 0 1 3 5 4 6 1 100 Ta=100°C Ta=25°C β=20 1 10 1000 800 Ta=25°C Ta=100°C 600 β=20 400 0.1 100 1 Collector Current, Ic ( mA ) Fig.5- IC — VBE Fig.6- Cob/Cib Ta=100°C Ta=25°C 1 0.6 0.8 Cib 10 Cob 1 0.1 0.1 1.0 Base-Emitter Voltage, VBE ( V ) 1 10 20 Reverse Bias Voltage, V ( V ) Fig.8- PC — Ta Fig.7- fT — IC 1000 250 VCE = 5V Ta=25°C Collector Power Dissipation, PC (mW) Transition Frequency , fT (MHZ) — VCB/VEB f=1MHz IE = 0/Ic =0 Ta = 25°C 10 0.4 100 100 Common Emitter VCE = 5V 0.1 0.1 10 Collector Current, Ic (mA) Capacitance, C ( pF ) Collector Current, Ic ( mA ) 100 100 Fig.4- VBEsat — IC BASE-Emitter Saturation Voltage, , VBEsat (V) Collector-Emtter Saturation Voltage , VCEsat (mV) Fig.3- VCEsat — IC 1000 10 0.1 10 Collector Current, Ic ( mA ) Collector-Emitter Voltage, VCE (V) 100 10 1 10 50 200 150 100 50 0 0 Collector Current, Ic (mA) 25 50 75 100 125 150 Ambient Temperature, Ta (°C) REV:B Page 3 QW-BTR31 Comchip Technology CO., LTD. Small Signal Transistor Reel Taping Specification P1 d T B W F E P0 C 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 ± 0.10 178 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 REV:B Page 4 QW-BTR31 Comchip Technology CO., LTD. Small Signal Schottky Diodes Marking Code Part Number Marking Code BC846A-G 1A BC847A-G 1E BC848A-G 1J BC846B-G 1B BC847B-G 1F BC848B-G 1K BC847C-G 1G BC848C-G 1L 3 XX 1 2 xx = Product type marking code Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 A C D B Standard Packaging Case Type SOT-23 Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 REV:B Page 5 QW-BTR31 Comchip Technology CO., LTD.