MYXN25Q256A13ESF Serial NOR Flash Memory 256Mb, 3V, Multiple I/O, 4KB Sector Erase Preliminary information. Subject to change without notice. Features • SPI-compatible serial bus interface • Double transfer rate (DTR) mode • 2.7–3.6V single supply voltage • 108 MHz (MAX) clock frequency supported for all protocols in single transfer rate (STR) mode • 54 MHz (MAX) clock frequency supported for all protocols in DTR mode • Dual/quad I/O instruction provides increased throughput up to 54 MB/s • Supported protocols Extended SPI, dual I/O, and quad I/O DTR mode supported on all • Execute-in-place (XIP) mode for all three protocols Configurable via volatile or nonvolatile registers Enables memory to work in XIP mode directly after power-on Subsector erase 4KB uniform granularity blocks Sector erase 64KB uniform granularity blocks Full-chip erase • Write protection Software write protection applicable to every 64KB sector via volatile lock bit Hardware write protection: protected area size defined by five nonvolatile bits (BP0, BP1, BP2, BP3, and TB) Additional smart protections, available upon request • Electronic signature JEDEC-standard 2-byte signature (BA19h) Unique ID of 17 read-only bytes including: additional extended device ID (EDID) to identify device factory options; customized factory data • Minimum 100,000 ERASE cycles per sector • More than 20 years data retention • PROGRAM/ERASE SUSPEND operations • Continuous read of entire memory via a single command Fast read Quad or dual output fast read Quad or dual I/O fast read • Flexible to fit application Configurable number of dummy cycles Output buffer configurable Options Code • Packages: TSOPII (Sn63 Pb37) SOP2-16/300mils DG SF • Temperature Ranges Military (-55°C to 125°C) XT • Software reset • 3-byte and 4-byte addressability mode supported • Part Marking: Label (L), Dot (D) • 64-byte, user-lockable, one-time programmable (OTP) dedicated area • Erase capability Micron Part. No. N25Q256A13ESFA0F August 17, 2015 • Revision 1.2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Form #: CSI-D-686 Document 015 PP 4 V SS 5 DQ0 MYXN25Q256A13ESF • 256Mb, 3V, Multiple I/O, 4KB Sector Erase Notes: 1. On the underside of the MLP8 package, there is an exposed central pad that is pulled Subject to change without notice. internallyAdvanced to V SSinformation. and must not be connected to any other voltage or signal line on the PCB. 2. Reset functionality is available in devices with a dedicated part number. See Part Number Ordering Information for complete package names and details. Figure 1: 16-Lead, Plastic Small Outline – SO16 (Top View) Figure 3: 16-Lead, Plastic Small Outline – SO16 (Top View) 1 16 C V CC 2 15 DQ0 DNU 3 14 DNU DNU 4 13 DNU DNU 5 12 DNU DNU 6 11 DNU S# 7 10 V SS DQ1 8 9 HOLD#/DQ3 Notes: W#/V /DQ2 PP 3V, 256Mb: Multiple I/O Serial Flash Memory 1. Reset functionality is available in devices with a dedicated part Package number. See Dimensions Part Num- ber Ordering Information for complete package names and details. 2. Pin 3 is DNU, except for the N25Q256A83ESF40x and N25Q256A83ESFA0F devices, where Figure 48: SOP2-16/300 mils Figure 2: SOP2-16/300 mils it is used as RESET. 10.30 ±0.20 16 h x 45° 9 0.23 MIN/ 0.32 MAX 10.00 MIN/ 10.65 MAX 7.50 ±0.10 1 8 0° MIN/8° MAX 2.5 ±0.15 0.1 Z 0.33 MIN/ 0.51 MAX 1.27 TYP Notes: PDF: 09005aef84566603 n25q_256mb_65nm.pdf - Rev. U 01/15 EN 0.20 ±0.1 0.40 MIN/ 1.27 MAX Z 1. All dimensions are in millimeters. 2. See Part Number Ordering Information for complete package names and details. 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Notes: 1. All dimensions are in millimeters. 2. Micron N25Q256A13ESFA0F August 17, 2015 • Revision 1.2 Micross US (Americas) • 407.298.7100 Micross UK (EMEA & ROW) • +44 (0) 1603 788967 [email protected] www.micross.com Form #: CSI-D-686 Document 015