MYX29GL01GS11DPIV2 1Gbit - 64M x 16 GL-S MirrorBit® Eclipse™ Flash Memory Advanced information. Subject to change without notice. Features • Advanced Sector Protection (ASP) Volatile and non-volatile protection methods for each sector • Tin-lead ball metallurgy • 65 nm MirrorBit Eclipse technology • Single supply (VCC) for read / program / erase (2.7V to 3.6V) • Separate 1024-byte One Time Program (OTP) array with two lockable regions • Common Flash Interface (CFI) parameter table • 100,000 erase cycles for any sector typical • Versatile I/O Feature Wide I/O voltage range (VIO): 1.65V to VCC • 20-year data retention typical • Configuration: 64M x 16 • Asynchronous 32-byte page read Options • 512-byte programming buffer Programming in page multiples, up to a maximum of 512 bytes • FBGA package (Sn63 Pb37 solder) 64-ball FBGA (9mm x 9mm) • Single word and multiple program on same word options • Operating temperature • Sector Erase • Marking Industrial (-40°C ≤ TC ≤ +85°C) Orange dot, label Uniform 128-kbyte sectors • Suspend and resume commands for program and erase operations • Revision • Status register, data polling, and ready/busy pin methods to determine device status Table 1: Performance Summary Maximum Read Access Times Density Voltage Range Random Access Time (tACC) Page Access Time (tPACC) CE# Access Time (tCE) OE# Access Time (tOE) 1Gb VersatileIO VIO 110 25 110 35 Spansion Part. No. S29GL01GS11DHIV2 April 15, 2015 • Revision 1.7 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Form #: CSI-D-686 Document 001 a t a xS e e t MirrorBit® Eclipse™ Flash Memory MYX29GL01GS11DPIV2 • 1Gbit D- 64M 16h GL-S Advanced information. Subject to change without notice. 11.2.2 Physical Diagram – LAE064 Figure 1: Physical Diagram – LAE064 Figure 11.4 LAE064—64-ball Fortified Ball Grid Array (FBGA), 9 x 9 mm PACKAGE NOTES: LAE 064 JEDEC 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. N/A 2. ALL DIMENSIONS ARE IN MILLIMETERS. 9.00 mm x 9.00 mm PACKAGE SYMBOL MIN NOM MAX NOTE A --- --- 1.40 A1 0.40 --- --- STANDOFF A2 0.60 --- --- BODY THICKNESS PROFILE HEIGHT D 9.00 BSC. BODY SIZE E 9.00 BSC. BODY SIZE D1 7.00 BSC. MATRIX FOOTPRINT E1 7.00 BSC. MATRIX FOOTPRINT MD 8 MATRIX SIZE D DIRECTION ME 8 MATRIX SIZE E DIRECTION N 64 b 0.50 0.60 BALL DIAMETER eD 1.00 BSC. BALL PITCH - D DIRECTION eE 1.00 BSC. BALL PITCH - E DIRECTION SD / SE 0.50 BSC. SOLDER BALL PLACEMENT ? NONE 4. e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER BALLS. BALL COUNT 0.70 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010? EXCEPT AS NOTED). DEPOPULATED SOLDER BALLS 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN ? THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 3623 \ 16-038.12 \ 1.16.07 April 15, 2015 • Revision 1.7 Micross US (Americas) • 407.298.7100 Micross UK (EMEA & ROW) • +44 (0) 1603 788967 [email protected] www.micross.com Form #: CSI-D-686 Document 001