V15P45S-M3 www.vishay.com Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers Ultra Low VF = 0.31 V at IF = 5 A FEATURES TMBS® eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Trench MOS Schottky technology • Low forward voltage drop, low power losses 1 • High efficiency operation 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C TO-277A (SMPC) K Anode 1 Cathode Anode 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) 15 A MECHANICAL DATA VRRM 45 V IFSM 210 A Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade VF at IF = 15 A 0.42 V TJ max. 150 °C Package TO-277A (SMPC) Diode variation Single die Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V15P45S UNIT 1545S VRRM 45 IF (1) 15 IF (2) 4.8 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 210 A Junction temperature in DC forward current without reverse bias, t 1 h TJ (3) 200 °C Operating junction temperature range TOP -40 to +150 °C Storage temperature range TSTG -40 to +175 °C Maximum DC forward current V A Notes (1) Mounted on 30 mm x 30 mm aluminum PCB (2) Free air, mounted on recommended copper pad area (3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 28-Nov-13 Document Number: 89343 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V15P45S-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5.0 A IF = 7.5 A TA = 25 °C IF = 15 A Instantaneous forward voltage VF (1) IF = 5.0 A TA = 125 °C IF = 7.5 A IF = 15 A TA = 25 °C VR = 45 V Reverse current TA = 125 °C IR (2) TYP. MAX. 0.40 - 0.45 - 0.49 0.58 0.31 - UNIT V 0.34 - 0.42 0.51 - 1500 μA 15 50 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V15P45S RJA (1) 75 RJM (2) 4 UNIT °C/W Notes (1) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction to ambient (2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V15P45S-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel V15P45S-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 18 11 TM = 116 °C (1) Average Power Loss (W) DC Forward Current (A) 16 14 12 10 8 6 TA = 25 °C (2) 4 TL Measured at the Cathode Band Terminal 2 D = 0.5 D = 0.8 D = 0.3 10 9 D = 0.2 8 7 D = 1.0 D = 0.1 6 5 T 4 3 2 D = tp/T 1 0 tp 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Notes Mounted on 30 mm x 30 mm aluminum PCB; TM measured at the terminal of cathode band (RJM = 4 °C/W) (2) Free air, mounted on recommended copper pad area (RJA = 75 °C/W) (1) Revision: 28-Nov-13 Document Number: 89343 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V15P45S-M3 www.vishay.com Vishay General Semiconductor 10 000 Instantaneous Forward Current (A) 100 10 Junction Capacitance (pF) TA = 150 °C TA = 125 °C TA = 100 °C 1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 TA = 25 °C 100 0.1 0.1 0.1 0 0.2 0.3 0.4 0.5 0.6 1 10 100 Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Instantaneous Reverse Current (A) 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Voltage (V) TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 100 Junction to Ambient 10 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 28-Nov-13 Document Number: 89343 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V15P45S-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A Revision: 28-Nov-13 Document Number: 89343 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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