2SC5866 Transistor Medium power transistor (60V, 2A) 2SC5866 zExternal dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0m, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2094 Abbreviated symbol : VL zApplications Low frequency amplifier High speed switching zStructure NPN Silicon epitaxial planar transistor zPackaging specifications Package Type Code Basic ordering unit (pieces) Taping TL 3000 2SC5866 zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Parameter IC 2 A ICP 4 A Power dissipation PC 500 mW Junction temperature Tj 150 °C Tstg −55 to +150 °C Collector current Range of storage temperature ∗1 ∗2 ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land. Rev.A 1/3 2SC5866 Transistor zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO 60 − − V IC=100µA Collector−emitter breakdown voltage BVCEO 60 − − V IC=1mA BVEBO 6 − − V IE=100µA Collector cut-off current ICBO − − 1.0 µA VCB=40V Emitter cut-off current IEBO − − 1.0 µA VEB=4V VCE(sat) − 200 500 mV IC=1A, IB=0.1A ∗1 DC current gain hFE 120 − 390 − Transition frequency 200 − MHz pF VCB=10V, IE=0mA, f=1MHz IC=2A, IB1=200mA IB2= −200mA VCC 25V ∗2 Collector−base breakdown voltage Emitter−base breakdown voltage Collector−emitter staturation voltage fT − Collector output capacitance Cob − 10 − Turn-on time Ton − 50 − ns Storage time Tstg − 120 − ns Fall time Tf − 35 − ns VCE=2V, IC=100mA VCE=10V, IE= −100mA, f=10MHz∗1 ∗1 Non repetitive pulse ∗2 See switching charactaristics measurement circuits zhFE RANK Q R 120-270 180-390 zElectrical characteristic curves 10 1000 1000 1 DC 0.1 0.01 100 Tf Ton 100 Ta=25°C Ta= −40°C 10 Single non repoetitive pulse 0.1 1 10 10 0.01 100 0.1 1 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) VCE=3V 10 0.1 1 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current 10 Ta=25°C 1 Ta=125°C 0.1 0.01 0.001 10 10 Ta=25°C Ta= −40°C 0.01 1 IC/IB=10/1 VCE=5V VCE=2V 0.1 Fig.3 DC current gain vs. collector current 10 Ta=25°C 100 0.01 COLLECTOR CURRENT : IC (A) Fig.2 Switching Time Fig.1 Safe operating area 1 0.001 1 0.001 10 COLLECTOR CURRENT : IC (A) COLLECTOR EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) 0.001 0.01 DC CURRENT GAIN : hFE Ta=125°C DC CURRENT GAIN : hFE 100ms SWITCHING TIME (ns) COLLECTOR CURRENT : IC (A) Tstg 10ms VCE=2V Ta=25°C VCC=25V IC/IB=10/1 1ms 0.01 0.1 1 COLLECTOR CURRENT : IC (A) 10 1 0.1 0.01 0.001 IC/IB=20/1 IC/IB=10/1 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current vs. Collector Current Rev.A 2/3 2SC5866 Transistor 10 1000 COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) VCE=2V Ta= −40°C 1 Ta=25°C Ta=125°C 0.1 0.01 0.001 1 Ta=125°C Ta=25°C 0.1 Ta= −40°C 0.01 0.01 0.1 1 0 10 0.5 1 1.5 Ta=25°C VCE=10V 100 10 1 −0.001 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) −0.01 −0.1 −1 −10 EMITTER CURRENT : IE (A) Fig.8 Ground emitter propagation characteristics Fig.7 Base-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : CoB (pF) TRANSITION FREQUENCY : FT (MHz) 10 IC/IB=10/1 Fig.9 Transition frequency 100 Ta=25°C f=1MHz 10 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector output capacitance zSwitching characteristics measurement circuits RL=12.5Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton Tstg Tf Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). 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