2SC4505 Transistors Power Transistor (400V, 0.1A) 2SC4505 zDimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. 3) High switching speed, typically tf = 1.7µs at Ic =100mA. 4) Complements the 2SC4505 and the 2SA1759. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 (1) (3) 1.0 (2) zPackaging specifications and hFE Type 2SC4505 Package hFE MPT3 PQ Marking Code CE∗ 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Base (2)Collector (3)Emitter T100 1000 Basic ordering unit (pieces) ∗ Denotes hFE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VCBO VCEO VEBO 400 400 7 0.1 V V V A (DC) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current IC Collector power dissipation PC Junction temperature Tj Tstg Storage temperature 0.2 A (Pulse) ∗1 0.5 W W 2 150 −55 to +150 ∗2 °C °C ∗1 Single pulse, Pw=20ms, Duty=1/2 ∗2 When mounted on a 40×40×0.7mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO − − − − − − − 10 V V V µA IC=50µA IC=1mA IE=50µA ICBO 400 400 7 − IEBO − − 10 µA VEB=6V Collector-emitter saturation voltage VCE(sat) − 0.05 0.5 V IC/IB=10mA/1mA Base-emitter saturation voltage VBE(sat) − − 1.5 V IC/IB=10mA/1mA hFE fT 82 − − 20 270 − − MHz Cob − 7 − pF VCB=10V , IE=0A , f=1MHz ton − 1 − µs IC=−100mA RL=1.5kΩ tstg − 5.5 − µs IB1=−IB2=10mA tf − 1.7 − µs VCC~−150V Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time BVEBO Conditions VCB=400V VCE=10V , IC=10mA VCE=10V , IE=−10mA , f=10MHz Rev.D 1/3 2SC4505 Transistors zElectrical characteristics (Ta=25°C) 1 0.5 Ta=25°C 120 A 2.5m 2.0mA 1.5mA 1.0mA 0.5mA 80 40 0.2 0.1 0.05 0.02 0.01 0.005 IB=0mA 4 6 8 10 10 5 2 0 1000 500 VCE=10V Ta=100°C 25°C 200 100 −25°C 50 20 10 5 2 1 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 0.2 500 200 100 50 20 10 5 2 1 −0.005 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 EMITTER CURRENT : IE (A) Fig.7 Gain bandwidth product vs. emitter current 1.2 1 0.001 0.002 0.005 0.01 0.02 1.4 1.6 Ta=25°C 5 2 1 0.5 0.2 IC/IB=20 10 5 0.1 0.05 0.02 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.05 0.1 0.2 0.5 1 COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current ( Ι ) 0.5 1 10 IC/IB=10 5 2 1 0.5 VBE(sat) Ta=−25°C 25°C 100°C 0.2 0.1 0.05 Ta=100°C VCE(sat) 25°C 0.02 0.01 0.001 0.002 0.005 −25°C 0.01 0.02 0.05 0.1 0.2 0.5 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage Collector-base saturation voltage vs. collector current vs. collector current 1000 1 Ta=25°C f=1MHz IE=0A 500 COLLECTOR CURRENT : IC (A) Ta=25°C VCE=10V 1.0 10 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 0.8 Fig.2 Ground emitter propagation characterisitics COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) 0.4 0.6 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 Ground emitter output characteristics 5V 20 0.001 COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hEF 50 COLLECTOR SATURATION VOLTAGE :VCE(sat) (V) BASE SATURATION VOLTAGE :VBE(sat) (V) 2 VCE=10V 100 0.002 0 0 TRANSITION FREQUENCY : fT (MHz) 200 DC CURRENT GAIN : hEF A 3.0m Ta=25°C 500 25°C −25°C 3.5 1000 VCE=3V Ta=100 °C mA 160 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 200 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage Ic Max. (Pulse∗) Pw=10m Pw=1m 0.1 Pw=100m DC 0.01 Ta=25°C ∗Single 0.001 nonrepetitive pulse 0.1 1 10 100 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area Rev.D 2/3 2SC4505 Transistors RL=1.5kΩ VIN IB1 Base current wave form IB2 IB1 IB2 TUT ~150V −VCC_ Pw ~50µs Pw_ duty cycle 90% 1% IC ~6V −VBB_ 10% Collector current wave form ton tstg tf Fig.10 Switching time mesurement circuit Rev.D 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. 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