datasheet

SKiiP 39MLI07E3V1
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
650
V
Ts = 25 °C
159
A
Ts = 70 °C
125
A
200
A
ICnom
ICRM
MiniSKiiP® 3
3-Level NPC Inverter
SKiiP 39MLI07E3V1
VGES
tpsc
Tj
ICRM = 2 x ICnom
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 650 V
400
A
-20 ... 20
V
6
µs
-40 ... 175
°C
Ts = 25 °C
163
A
Ts = 70 °C
125
A
200
A
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
IFnom
Features
• 650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• Uninterruptible power supplies (UPS)
• Solar inverters
Remarks
• Case temperature limited to TC = 125°C
max.; TC = TS (valid for baseplateless
modules)
• Product reliability results valid for
Tj≤150°C (recommended
Top=-40…+150°C)
IFRM
IFRM = 2 x IFnom
400
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1470
A
-40 ... 175
°C
Ts = 25 °C
163
A
Ts = 70 °C
125
A
200
A
Tj
Clamping diode
IF
Tj = 175 °C
IFnom
IFRM
IFRM = 2xIFnom
400
A
IFSM
10 ms, sin 180°, Tj = 25 °C
1470
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80°C, 20A per spring
Tstg
Visol
AC sinus 50 Hz, t = 1 min
200
A
-40 ... 125
°C
2500
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Conditions
IC = 200 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.45
1.85
V
Tj = 150 °C
1.70
2.10
V
Tj = 25 °C
0.9
1
V
Tj = 150 °C
0.85
0.9
V
Tj = 25 °C
2.8
4.3
mΩ
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE, IC = 3.2 mA
ICES
VGE = 0 V
VCE = 650 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
Tj = 150 °C
4.3
6
mΩ
5.8
6.5
V
Tj = 25 °C
0.1
0.3
mA
f = 1 MHz
12.34
nF
f = 1 MHz
0.77
nF
5
mA
f = 1 MHz
0.37
nF
1600
nC
2
Ω
MLI
© by SEMIKRON
Rev. 0 – 02.04.2014
1
SKiiP 39MLI07E3V1
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
T1 / T4
td(on)
Eoff
VCE = 300 V
IC = 200 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 2 Ω
di/dton = 3150 A/µs
di/dtoff = 2000 A/µs
Rth(j-s)
per IGBT
tr
Eon
td(off)
tf
MiniSKiiP® 3
Tj = 150 °C
165
ns
Tj = 150 °C
69
ns
Tj = 150 °C
3.6
mJ
Tj = 150 °C
341
ns
Tj = 150 °C
83
ns
Tj = 150 °C
8.9
mJ
0.5
K/W
T2 / T3
3-Level NPC Inverter
td(on)
tr
Eon
VCE = 300 V
IC = 200 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 2 Ω
di/dton = 3120 A/µs
di/dtoff = 2000 A/µs
SKiiP 39MLI07E3V1
td(off)
Features
Rth(j-s)
• 650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Inverse diode
VF = VEC IF = 200 A
VGE = 0 V
chiplevel
VF0
chiplevel
Typical Applications*
rF
tf
Eoff
• Uninterruptible power supplies (UPS)
• Solar inverters
Remarks
152
ns
70
ns
Tj = 150 °C
1.8
mJ
Tj = 150 °C
324
ns
Tj = 150 °C
89
ns
Tj = 150 °C
9.5
mJ
0.5
K/W
Tj = 25 °C
1.4
1.8
V
Tj = 150 °C
1.4
1.8
V
Tj = 25 °C
1
1.2
V
Tj = 150 °C
0.9
1
V
Tj = 25 °C
1.8
2.6
mΩ
Tj = 150 °C
2.6
3.9
mΩ
157
A
31
µC
Err
IF = 200 A
Tj = 150 °C
di/dtoff = 2700 A/µs T = 150 °C
j
VGE = -15 V
Tj = 150 °C
8.3
mJ
Rth(j-s)
per Diode
0.6
K/W
IRRM
Qrr
• Case temperature limited to TC = 125°C
max.; TC = TS (valid for baseplateless
modules)
• Product reliability results valid for
Tj≤150°C (recommended
Top=-40…+150°C)
chiplevel
Tj = 150 °C
Tj = 150 °C
Clamping diode
VF = VEC IF = 200 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
chiplevel
Tj = 25 °C
1.4
1.8
V
Tj = 150 °C
1.4
1.8
V
Tj = 25 °C
1
1.2
V
Tj = 150 °C
0.9
1
V
Tj = 25 °C
1.8
2.6
mΩ
2.6
3.9
mΩ
Err
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 3100 A/µs T = 150 °C
j
VGE = -15 V
Tj = 150 °C
Rth(j-s)
per Diode
IRRM
Qrr
171
A
16
µC
4
mJ
0.6
K/W
Module
Ms
to heat sink
w
weight
2
2.5
Nm
82
g
5.0 ± 5%
kΩ
Temperature Sensor
R25
NTC, Tr = 25 °C 1)
MLI
2
Rev. 0 – 02.04.2014
© by SEMIKRON
SKiiP 39MLI07E3V1
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 02.04.2014
3
SKiiP 39MLI07E3V1
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode
Fig. 10: CAL diode forward characteristic
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 02.04.2014
© by SEMIKRON
SKiiP 39MLI07E3V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 0 – 02.04.2014
5