SKiiP 28TMLI12F4V1 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC MiniSKiiP® 2 3-Level TNPC Inverter (*) SKiiP 28TMLI12F4V1 • Fast Trench 4 IGBTs • Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 ICRM VGES tpsc Tj A Ts = 70 °C 65 A Ts = 25 °C 93 A Ts = 70 °C ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 76 A 80 A 240 A -20 ... 20 V 10 µs -40 ... 175 °C Values Unit 650 V Ts = 25 °C 68 A Ts = 70 °C 51 A Ts = 25 °C 77 A Ts = 70 °C 61 A Tj = 150 °C Conditions IGBT 2 VCES IC IC Tj = 25 °C Tj = 150 °C Tj = 175 °C ICnom VGES • Case temperature limited to TC=125°C max.; TC = TS (for baseplateless modules) • Product reliability results valid for Tj≤150°C (recommended Tjop=-40...+150°C) • IGBT 1: outer IGBTs T1&T4 • IGBT 2: inner IGBTs T2&T3 • Diode 1: outer diodes D1&D4 • Diode 2: inner diodes D2&D3 Tj = 175 °C V 84 Absolute Maximum Ratings ICRM Remarks Tj = 150 °C 1200 Ts = 25 °C ICnom Symbol Features Tj = 25 °C tpsc Tj ICRM = 3 x ICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C 75 A 225 A -20 ... 20 V 6 µs -40 ... 175 °C Values Unit Absolute Maximum Ratings Symbol Conditions Diode 1 VRRM IF IF Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 68 A Ts = 70 °C 51 A Ts = 25 °C 76 A Ts = 70 °C 61 A 75 A 225 A IFnom IFRM IFRM = 3 x IFnom IFSM 10 ms, sin 180°, Tj = 150 °C Tj 430 A -40 ... 175 °C TMLI © by SEMIKRON Rev. 1 – 17.02.2015 1 SKiiP 28TMLI12F4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Diode 2 VRRM IF Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C IFnom MiniSKiiP® 2 3-Level TNPC Inverter (*) IFRM IFRM = 2 x IFnom IFSM 10 ms sin 180° • Fast Trench 4 IGBTs • Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 • Case temperature limited to TC=125°C max.; TC = TS (for baseplateless modules) • Product reliability results valid for Tj≤150°C (recommended Tjop=-40...+150°C) • IGBT 1: outer IGBTs T1&T4 • IGBT 2: inner IGBTs T2&T3 • Diode 1: outer diodes D1&D4 • Diode 2: inner diodes D2&D3 51 A 50 A A 550 A Tj = 150 °C 460 A -40 ... 175 °C Values Unit 80 A -40 ... 125 °C 2500 V Absolute Maximum Ratings Conditions Module It(RMS) Visol Tterminal = 80 °C, 20 A per spring AC sinus 50 Hz, t = 1 min Characteristics Symbol IGBT 1 VCE(sat) VCE0 Remarks A 100 Tstg Features V 65 Tj = 25 °C Tj Symbol SKiiP 28TMLI12F4V1 650 rCE VGE(th) ICES Cies Coes Cres Conditions IC = 80 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel min. typ. max. Unit Tj = 25 °C 2.05 2.40 V Tj = 150 °C 2.50 2.85 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 16 19 mΩ Tj = 150 °C 23 26 mΩ 5.8 6.4 V Tj = 25 °C 0.1 0.3 mA f = 1 MHz 4.60 nF f = 1 MHz 0.37 nF f = 1 MHz 0.27 nF 370 nC VGE = VCE V, IC = 1 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V mA QG - 8 V...+ 15 V RGint Tj = 25 °C VCE = 300 V Tj = 150 °C IC = 80 A Tj = 150 °C RG on = 1.6 Ω Tj = 150 °C RG off = 1.6 Ω di/dton = 1330 A/µs Tj = 150 °C di/dtoff = 1220 A/µs Tj = 150 °C VGE neg = -15 V Tj = 150 °C VGE pos = 15 V per IGBT, λpaste=0.8 W/K*m td(on) tr Eon td(off) tf Eoff Rth(j-s) 5.2 4 Ω 168 ns 54 ns 3.4 mJ 285 ns 58 ns 2.2 mJ 0.49 K/W Characteristics Symbol Conditions min. Ms to heat sink 2 w weight typ. max. Unit 2.5 Nm Module 55 g TMLI 2 Rev. 1 – 17.02.2015 © by SEMIKRON SKiiP 28TMLI12F4V1 Characteristics Symbol IGBT 2 VCE(sat) VCE0 MiniSKiiP® 2 3-Level TNPC Inverter (*) SKiiP 28TMLI12F4V1 Features • Fast Trench 4 IGBTs • Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Conditions IC = 75 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.45 1.77 V Tj = 150 °C 1.70 2.10 V Tj = 25 °C 0.9 1 V Tj = 150 °C 0.82 0.9 V Tj = 25 °C 7.3 10 mΩ rCE VGE = 15 V chiplevel VGE(th) VGE = VCE V, IC = 1.5 mA ICES VGE = 0 V VCE = 650 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 150 °C Tj = 25 °C tf Eoff Rth(j-s) Remarks Characteristics • Case temperature limited to TC=125°C max.; TC = TS (for baseplateless modules) • Product reliability results valid for Tj≤150°C (recommended Tjop=-40...+150°C) • IGBT 1: outer IGBTs T1&T4 • IGBT 2: inner IGBTs T2&T3 • Diode 1: outer diodes D1&D4 • Diode 2: inner diodes D2&D3 Symbol Diode 1 VF = VEC VF0 rF IRRM Qrr Err Rth(j-s) chiplevel chiplevel 0.1 0.3 mA mA nF 0.30 nF f = 1 MHz 0.14 nF 680 nC Conditions IF = 75 A VGE = 0 V chiplevel V f = 1 MHz Tj = 25 °C VCE = 300 V Tj = 150 °C IC = 75 A Tj = 150 °C RG on = 1.6 Ω Tj = 150 °C RG off = 1.6 Ω di/dton = 2600 A/µs Tj = 150 °C di/dtoff = 1000 A/µs Tj = 150 °C VGE neg = -15 V Tj = 150 °C VGE pos = 15 V per IGBT, λpaste=0.8 W/K*m td(off) mΩ 4.62 RGint Eon 16 6.4 f = 1 MHz - 8 V...+ 15 V tr 12 5.8 Tj = 150 °C QG td(on) 5.1 min. 4 Ω 84 ns 33 ns 1.6 mJ 212 ns 65 ns 1.9 mJ 0.89 K/W typ. max. Unit Tj = 25 °C 2.2 2.5 V Tj = 150 °C 2.1 2.4 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 12 13 mΩ 16 18 mΩ Tj = 150 °C IF = 75 A Tj = 150 °C di/dtoff = 2360 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VR = 300 V per Diode, λpaste=0.8 W/K*m 115 A 8.9 µC 1.7 mJ 0.86 K/W Characteristics Symbol Diode 2 VF = VEC VF0 rF IRRM Qrr TMLI © by SEMIKRON Err Rth(j-s) Conditions IF = 50 A VGE = 0 V chiplevel chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.4 1.7 V Tj = 150 °C 1.4 1.7 V Tj = 25 °C 1 1.2 V Tj = 150 °C 0.9 1 V Tj = 25 °C 6.7 9.8 mΩ Tj = 150 °C 10 15 mΩ IF = 50 A Tj = 125 °C di/dtoff = 1250 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VR = 300 V per Diode, λpaste=0.8 W/K*m Rev. 1 – 17.02.2015 48.7 A 5 µC 0.7 mJ 1.25 K/W 3 SKiiP 28TMLI12F4V1 Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R100 B100/125 Tr = 100 °C, tolerance = 3 % R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2 ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 1670 ± 3% Ω 3550 ± 2% K MiniSKiiP® 2 3-Level TNPC Inverter (*) SKiiP 28TMLI12F4V1 Features • Fast Trench 4 IGBTs • Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Remarks • Case temperature limited to TC=125°C max.; TC = TS (for baseplateless modules) • Product reliability results valid for Tj≤150°C (recommended Tjop=-40...+150°C) • IGBT 1: outer IGBTs T1&T4 • IGBT 2: inner IGBTs T2&T3 • Diode 1: outer diodes D1&D4 • Diode 2: inner diodes D2&D3 TMLI 4 Rev. 1 – 17.02.2015 © by SEMIKRON SKiiP 28TMLI12F4V1 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 17.02.2015 5 SKiiP 28TMLI12F4V1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 6 Rev. 1 – 17.02.2015 © by SEMIKRON SKiiP 28TMLI12F4V1 Fig. 13: Typ. output characteristic, inclusive RCC'+ EE' Fig. 14: Rated current vs. temperature IC= f (TS) Fig. 15: Typ. turn-on /-off energy = f (IC) Fig. 16: Typ. turn-on /-off energy = f (RG) Fig. 17: Typ. transfer characteristic Fig. 18: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 17.02.2015 7 SKiiP 28TMLI12F4V1 Fig. 19: Typ. switching times vs. IC Fig. 20: Typ. switching times vs. gate resistor RG Fig. 21: Transient thermal impedance of IGBT and Diode Fig. 22: CAL diode forward characteristic Fig. 23: Typ. CAL diode peak reverse recovery current Fig. 24: Typ. CAL diode recovery charge 8 Rev. 1 – 17.02.2015 © by SEMIKRON SKiiP 28TMLI12F4V1 pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 17.02.2015 9