datasheet

SKiiP 28TMLI12F4V1
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT 1
VCES
IC
IC
MiniSKiiP® 2
3-Level TNPC Inverter (*)
SKiiP 28TMLI12F4V1
• Fast Trench 4 IGBTs
• Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
ICRM
VGES
tpsc
Tj
A
Ts = 70 °C
65
A
Ts = 25 °C
93
A
Ts = 70 °C
ICRM = 3 x ICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
76
A
80
A
240
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Values
Unit
650
V
Ts = 25 °C
68
A
Ts = 70 °C
51
A
Ts = 25 °C
77
A
Ts = 70 °C
61
A
Tj = 150 °C
Conditions
IGBT 2
VCES
IC
IC
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
ICnom
VGES
• Case temperature limited to TC=125°C
max.; TC = TS (for baseplateless
modules)
• Product reliability results valid for
Tj≤150°C (recommended
Tjop=-40...+150°C)
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
Tj = 175 °C
V
84
Absolute Maximum Ratings
ICRM
Remarks
Tj = 150 °C
1200
Ts = 25 °C
ICnom
Symbol
Features
Tj = 25 °C
tpsc
Tj
ICRM = 3 x ICnom
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 650 V
Tj = 150 °C
75
A
225
A
-20 ... 20
V
6
µs
-40 ... 175
°C
Values
Unit
Absolute Maximum Ratings
Symbol
Conditions
Diode 1
VRRM
IF
IF
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
1200
V
Ts = 25 °C
68
A
Ts = 70 °C
51
A
Ts = 25 °C
76
A
Ts = 70 °C
61
A
75
A
225
A
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
10 ms, sin 180°, Tj = 150 °C
Tj
430
A
-40 ... 175
°C
TMLI
© by SEMIKRON
Rev. 1 – 17.02.2015
1
SKiiP 28TMLI12F4V1
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Diode 2
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
MiniSKiiP® 2
3-Level TNPC Inverter (*)
IFRM
IFRM = 2 x IFnom
IFSM
10 ms
sin 180°
• Fast Trench 4 IGBTs
• Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• Case temperature limited to TC=125°C
max.; TC = TS (for baseplateless
modules)
• Product reliability results valid for
Tj≤150°C (recommended
Tjop=-40...+150°C)
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
51
A
50
A
A
550
A
Tj = 150 °C
460
A
-40 ... 175
°C
Values
Unit
80
A
-40 ... 125
°C
2500
V
Absolute Maximum Ratings
Conditions
Module
It(RMS)
Visol
Tterminal = 80 °C, 20 A per spring
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol
IGBT 1
VCE(sat)
VCE0
Remarks
A
100
Tstg
Features
V
65
Tj = 25 °C
Tj
Symbol
SKiiP 28TMLI12F4V1
650
rCE
VGE(th)
ICES
Cies
Coes
Cres
Conditions
IC = 80 A
VGE = 15 V
chiplevel
chiplevel
VGE = 15 V
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
2.05
2.40
V
Tj = 150 °C
2.50
2.85
V
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
16
19
mΩ
Tj = 150 °C
23
26
mΩ
5.8
6.4
V
Tj = 25 °C
0.1
0.3
mA
f = 1 MHz
4.60
nF
f = 1 MHz
0.37
nF
f = 1 MHz
0.27
nF
370
nC
VGE = VCE V, IC = 1 mA
VGE = 0 V
VCE = 1200 V
VCE = 25 V
VGE = 0 V
mA
QG
- 8 V...+ 15 V
RGint
Tj = 25 °C
VCE = 300 V
Tj = 150 °C
IC = 80 A
Tj = 150 °C
RG on = 1.6 Ω
Tj = 150 °C
RG off = 1.6 Ω
di/dton = 1330 A/µs Tj = 150 °C
di/dtoff = 1220 A/µs Tj = 150 °C
VGE neg = -15 V
Tj = 150 °C
VGE pos = 15 V
per IGBT, λpaste=0.8 W/K*m
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
5.2
4
Ω
168
ns
54
ns
3.4
mJ
285
ns
58
ns
2.2
mJ
0.49
K/W
Characteristics
Symbol
Conditions
min.
Ms
to heat sink
2
w
weight
typ.
max.
Unit
2.5
Nm
Module
55
g
TMLI
2
Rev. 1 – 17.02.2015
© by SEMIKRON
SKiiP 28TMLI12F4V1
Characteristics
Symbol
IGBT 2
VCE(sat)
VCE0
MiniSKiiP® 2
3-Level TNPC Inverter (*)
SKiiP 28TMLI12F4V1
Features
• Fast Trench 4 IGBTs
• Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Conditions
IC = 75 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.45
1.77
V
Tj = 150 °C
1.70
2.10
V
Tj = 25 °C
0.9
1
V
Tj = 150 °C
0.82
0.9
V
Tj = 25 °C
7.3
10
mΩ
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE V, IC = 1.5 mA
ICES
VGE = 0 V
VCE = 650 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 150 °C
Tj = 25 °C
tf
Eoff
Rth(j-s)
Remarks
Characteristics
• Case temperature limited to TC=125°C
max.; TC = TS (for baseplateless
modules)
• Product reliability results valid for
Tj≤150°C (recommended
Tjop=-40...+150°C)
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
Symbol
Diode 1
VF = VEC
VF0
rF
IRRM
Qrr
Err
Rth(j-s)
chiplevel
chiplevel
0.1
0.3
mA
mA
nF
0.30
nF
f = 1 MHz
0.14
nF
680
nC
Conditions
IF = 75 A
VGE = 0 V
chiplevel
V
f = 1 MHz
Tj = 25 °C
VCE = 300 V
Tj = 150 °C
IC = 75 A
Tj = 150 °C
RG on = 1.6 Ω
Tj = 150 °C
RG off = 1.6 Ω
di/dton = 2600 A/µs Tj = 150 °C
di/dtoff = 1000 A/µs Tj = 150 °C
VGE neg = -15 V
Tj = 150 °C
VGE pos = 15 V
per IGBT, λpaste=0.8 W/K*m
td(off)
mΩ
4.62
RGint
Eon
16
6.4
f = 1 MHz
- 8 V...+ 15 V
tr
12
5.8
Tj = 150 °C
QG
td(on)
5.1
min.
4
Ω
84
ns
33
ns
1.6
mJ
212
ns
65
ns
1.9
mJ
0.89
K/W
typ.
max.
Unit
Tj = 25 °C
2.2
2.5
V
Tj = 150 °C
2.1
2.4
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
12
13
mΩ
16
18
mΩ
Tj = 150 °C
IF = 75 A
Tj = 150 °C
di/dtoff = 2360 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VR = 300 V
per Diode, λpaste=0.8 W/K*m
115
A
8.9
µC
1.7
mJ
0.86
K/W
Characteristics
Symbol
Diode 2
VF = VEC
VF0
rF
IRRM
Qrr
TMLI
© by SEMIKRON
Err
Rth(j-s)
Conditions
IF = 50 A
VGE = 0 V
chiplevel
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.4
1.7
V
Tj = 150 °C
1.4
1.7
V
Tj = 25 °C
1
1.2
V
Tj = 150 °C
0.9
1
V
Tj = 25 °C
6.7
9.8
mΩ
Tj = 150 °C
10
15
mΩ
IF = 50 A
Tj = 125 °C
di/dtoff = 1250 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VR = 300 V
per Diode, λpaste=0.8 W/K*m
Rev. 1 – 17.02.2015
48.7
A
5
µC
0.7
mJ
1.25
K/W
3
SKiiP 28TMLI12F4V1
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Temperature Sensor
R100
B100/125
Tr = 100 °C, tolerance = 3 %
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2
], A = 7.635*10-3 °C-1,
B = 1.731*10-5 °C-2
1670 ±
3%
Ω
3550 ±
2%
K
MiniSKiiP® 2
3-Level TNPC Inverter (*)
SKiiP 28TMLI12F4V1
Features
• Fast Trench 4 IGBTs
• Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Case temperature limited to TC=125°C
max.; TC = TS (for baseplateless
modules)
• Product reliability results valid for
Tj≤150°C (recommended
Tjop=-40...+150°C)
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
TMLI
4
Rev. 1 – 17.02.2015
© by SEMIKRON
SKiiP 28TMLI12F4V1
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 17.02.2015
5
SKiiP 28TMLI12F4V1
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode
Fig. 10: CAL diode forward characteristic
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
6
Rev. 1 – 17.02.2015
© by SEMIKRON
SKiiP 28TMLI12F4V1
Fig. 13: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 14: Rated current vs. temperature IC= f (TS)
Fig. 15: Typ. turn-on /-off energy = f (IC)
Fig. 16: Typ. turn-on /-off energy = f (RG)
Fig. 17: Typ. transfer characteristic
Fig. 18: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 17.02.2015
7
SKiiP 28TMLI12F4V1
Fig. 19: Typ. switching times vs. IC
Fig. 20: Typ. switching times vs. gate resistor RG
Fig. 21: Transient thermal impedance of IGBT and Diode
Fig. 22: CAL diode forward characteristic
Fig. 23: Typ. CAL diode peak reverse recovery current
Fig. 24: Typ. CAL diode recovery charge
8
Rev. 1 – 17.02.2015
© by SEMIKRON
SKiiP 28TMLI12F4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 17.02.2015
9