ILN2004 00

TECHNICAL DATA
HIGH-VOLTAGE HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAYS
ILN2004
The ILN2004 are monolithic high-voltage, high-current
Darlington transistor arrays. Each consists of seven n-p-n
Darlington pairs that feature high-voltage outputs with commoncathode clamp diodes for switching inductive loads. The collectorcurrent rating of a single Darlington pair is 500 mA. The
Darlington pairs may be paralleled for higher current capability.
Applications include relay drivers, hammer drivers, lamp drivers,
display drivers (LED and gas discharge), line drivers, and logic
buffers.
The ILN2004 has a 10.5kΩ
Darlington pair for operation directly with 6-15V CMOS devices.
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500-mA Rated Collector Current (Single Output)
High-Voltage Outputs . . . 50 V
Output Clamp Diodes
Inputs Compatible With Various Types of Logic
Relay Driver Applications
LOGIC SYMBOL
ORDERING INFORMATION
ILN2004N DIP
ILN2004D SOP
TA = -20C to 85 C for all packages
LOGIC DIAGRAM
SCHEMATICS (each Darlington Pair)
ILN2004: RB = 10.5 kΩ
All resistor values shown are nominal.
2011, January, Rev. 00
ILN2004
Absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
Symbol
Parameter
Collector-emitter voltage
Input voltage(see Note 1)
Peak collector current (see Figures 14 and 15)
Output clamp current
Total emitter-terminal current
Continuous total power dissipation
Operating free-air temperature range
Storage temperature range
VI
IOK
TA
Tstg
Value
Unit
50
30
500
500
–2.5
V
V
mA
mA
A
See Dissipation Rating Table
–20 to 85
–65 to 150
°C
°C
NOTE 1: All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
Dissipation Rating Table
PACKAGE
D
N
TA=25°C
POWER RATING
950mW
1150mW
TA=85°C
POWER RATING
494mW
598 mW
DERATING FACTOR
above TA=25°C
7.6mW/°C
9.2mW/°C
Electrical Characteristics, TA = 25°C (unless otherwise noted)
Symbol
Parameter
Vi(on)
Input Voltage
VCE(sat)
Test
Figure
6
5
Ii(off)
Collector-emitter
Saturation
Voltage
Output Leakage Current
Clamp Diode Forward
Voltage
Off-state Input Current
Ii
Input Current
4
IR
Clamp Reverse Current
7
ICEX
VF
2
8
3
Test Conditions
Min.
Typ.
VCE=2V
IC = 125mA
IC = 200mA
IC = 275mA
IC = 350mA
IC = 100mA, IB = 250mA
IC = 200 mA, IB = 350mA
IC = 350mA, IB = 500mA
VCE = 50V, Vi = 1V
IF = 350mA
VCE=50V, Tamb = 70°C,
IC = 500mA
Vi = 5V
Vi = 12V
VR = 50V
Tamb = 70°C, VR = 50V
Turn-on Delay Time
Turn-off Delay Time
VOH
High level output
voltage after switching
See Fig.9
See Fig.9
VS=50V, IO=300mA
See Fig.10
Unit
V
0.9
1.1
1.3
1.7
50
5
6
7
8
1.1
1.3
1.6
500
2
65
0.35
1
Ci
Input Capacitance
Switching Characteristics, TA=25ºC
tPLH
tPHL
Max.
VS-20
V
uA
V
uA
mA
15
0.5
1.45
50
100
25
0.25
0.25
1
1
us
us
mV
uA
pF
2011, January, Rev. 00
ILN2004
PARAMETER MEASUREMENT INFORMATION
2011, January, Rev. 00
ILN2004
Figure 9. Propagation Delay-Time Waveforms
NOTES: A. The pulse generator has the following characteristics: PRR = 12.5 kHz, Z O
B. CL includes probe and jig capacitance.
C. VIH = 12 V;
Figure 10. Latch-Up Test Circuit and Voltage Waveforms
TYPICAL CHARACTERISTICS
COLLECTOR-EMITTER SATURATION VOLTAGE vs
COLLECTOR CURRENT (ONE DARLINGTON)
COLLECTOR-EMITTER SATURATION VOLTAGE vs
TOTAL COLLECTOR CURRENT TWO
DARLINGTONS PARALLELED)
2011, January, Rev. 00
ILN2004
COLLECTOR CURRENT
vs
INPUT CURRENT
THERMAL INFORMATION
D PACKAGE MAXIMUM COLLECTOR CURRENT
vs DUTY CYCLE
N PACKAGE MAXIMUM COLLECTOR CURRENT
vs DUTY CYCLE
2011, January, Rev. 00
ILN2004
Figure 14
Figure 15
APPLICATION INFORMATION
2011, January, Rev. 00
ILN2004
2011, January, Rev. 00
ILN2004
DIP-16
SOP-16
2011, January, Rev. 00