MIMMG200S060B6N 600V 200A IGBT Module RoHS Compliant FEATURES · Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · Integrated Gate Resistor APPLICATIONS · Invertor · Convertor · Welder GS Series Module · SMPS and UPS · Induction Heating ABSOLUTE MAXIMUM RATINGS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage 600 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 230 A TC=50°C 200 A ICpuls Pulsed Collector Current TC=25°C, tp=1ms 460 A TC=50°C, tp=1ms 400 A Ptot Power Dissipation Per IGBT 735 W TJ Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage 3000 V 600 V TC=25°C 200 A TC=50°C 160 A 285 A AC, t=1min Free-Wheeling Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IF(RMS) RMS Forward Current IFSM Non-Repetitive Surge TJ=45°C, t=10ms, Sine 600 A Forward Current TJ=45°C, t=8.3ms, Sine 660 A MIMMG200S060B6N ELECTRICAL CHARACTERISTICS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit 4.5 5.5 6.5 V 2.45 V IGBT VGE(th) VCE(sat) Gate - Emitter Threshold Voltage VCE=VGE, IC=4mA Collector - Emitter IC=200A, VGE=15V, TJ=25°C 1.95 Saturation Voltage IC=200A, VGE=15V, TJ=125°C 2.2 ICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr VCE=600V, VGE=0V, TJ=25°C V 0.5 VCE=600V, VGE=0V, TJ=125°C 1 VCE=0V, VGE=±20V -0.6 mA 0.6 μA 7 Ω 5 VCC=300V, IC=200A , VGE=±15V mA 890 nC 9 nF 0.9 nF 0.8 nF VCC=300V, IC=200A 163 ns Rise Time RG =1.5Ω,VGE=±15V 43 ns td(off) Turn - off Delay Time TJ=25°C 253 ns tf Fall Time Inductive Load 33 ns td(on) Turn - on Delay Time VCC=300V, IC=200A 180 ns tr Rise Time RG =1.5Ω,VGE=±15V 49 ns td(off) Turn - off Delay Time TJ=125°C 285 ns tf Fall Time Inductive Load 41 ns Eon Turn - on Switching Energy Eoff Turn - off Switching Energy VCE=25V, VGE=0V, f =1MHz VCC=300V, IC=200A TJ=25°C 3 mJ RG =1.5Ω TJ=125°C 4.6 mJ VGE=±15V TJ=25°C 4.1 mJ Inductive Load TJ=125°C 6.3 mJ Free-Wheeling Diode IF=200A , VGE=0V, TJ=25°C 1.25 IF=200A , VGE=0V, TJ=125°C 1.2 V Reverse Recovery Time IF=200A , VR=300V 249 ns IRRM Max. Reverse Recovery Current diF/dt=-1000A/μs 107 A Qrr Reverse Recovery Charge TJ=125°C 15.5 µC VF Forward Voltage trr 1.6 V THERMAL AND MECHANICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit RthJC Junction-to-Case Thermal Resistance Per IGBT 0.17 K /W RthJCD Junction-to-Case Thermal Resistance Per Inverse Diode 0.3 K /W Torque Module-to-Sink Recommended（M6） 3 5 N· m Torque Module Electrodes Recommended（M5） 2.5 5 N· m Weight 150 g 420 420 350 350 280 280 TJ =25°C IC (A) IC (A) MIMMG200S060B6N 210 VCE=20V 210 TJ =125°C 140 140 70 70 TJ =125°C 0 0 0 1.5 2.5 3.5 2 3 VCE(sat)（V） Figure1. Typical Output characteristics 0.5 1 18 12 2 4 6 8 10 12 14 VGE（V） Figure2. Typical Transfer characteristics 18 VCC=300V RG=1.5ohm VGE=±15V TJ =125°C VCC=300V IC=200A VGE=±15V TJ =125°C 15 12 Eon Eoff (mJ) Eon Eoff (mJ) 15 0 TJ =25°C 9 Eoff 6 Eon 9 Eoff 6 Eon 3 3 0 0 0 21 9 12 15 18 RG（ohm） Figure4. Switching Energy vs. Gate Resistor 120 180 240 300 360 420 IC（A） Figure3. Switching Energy vs. Collector Current 60 1000 0 td(off) td(on) t (ns) td(on) t (ns) 6 1000 td(off) 100 100 tr tr tf tf 10 0 3 VCC=300V RG=1.5ohm VGE=±15V TJ =125°C 120 160 200 240 280 IC（A） Figure5. Switching Times vs. Collector Current 40 80 10 VCC=300V IC=200A VGE=±15V TJ =125°C 0 2 6 8 10 12 14 RG（ohm） Figure6. Switching Times vs. Gate Resistor 4 MIMMG200S060B6N 10 25 20 Cies VCC=300V IC=200A TJ =25°C C (nF) VGE (V) 15 10 VGE =0V f=1MHz Coes 1 Cres 5 0.1 400 800 600 1000 Qg（nC） Figure7. Gate Charge characteristics 200 0 600 1200 500 1000 400 800 300 0 0 10 15 20 25 30 35 600 200 100 5 VCE（V） Figure8. Typical Capacitances vs. VCE ICsc (A) ICpuls (A) 0 0 400 TJ =150°C TC =25°C VGE =15V 100 TJ =150°C TC =25°C VGE =15V tsc≤10µs 200 0 200 300 400 500 600 700 VCE（V） Figure10. Short Circuit Safe Operating Area 300 400 500 600 700 VCE（V） Figure9. Reverse Biased Safe Operating Area 200 300 0 100 420 TJ =150°C VGE ≥15V 250 350 280 200 IC(A) TJ =125°C IF (A) 150 210 140 100 TJ =25°C 70 50 0 0 50 75 100 125 150 TC Case Temperature(°C) Figure11. Rated Current vs. TC 25 175 0 0 1.5 2.0 2.5 3 3.5 VF（V） Figure12. Diode Forward Characteristics 0.5 1.0 MIMMG200S060B6N 1 1 -1 10-1 10-2 ZthJC (K/W) Duty 0.5 0.2 0.1 0.05 Single Pulse Duty 0.5 0.2 0.1 0.05 Single Pulse 10-2 10-3 10-3 10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure13. Transient Thermal Impedance of IGBT 10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure14. Transient Thermal Impedance of Diode 1 3 2 4 5 6 7 Figure15. Circuit Diagram M5 8.5 23.0 29.5 30.5 2.8x0.5 3 17.0 34.0 2 7 6 1 4.5 94.0 23.0 23.0 17.0 80.0 Dimensions in mm Figure16. Package Outlines 4.5 4 5 6.5 ZthJC (K/W) 10