MIMMG450WB060B6N

MIMMG450WB060B6N
600V 450A IGBT Module
RoHS Compliant
FEATURES
· Ultra Low Loss
· High Ruggedness
· High Short Circuit Capability
· Positive Temperature Coefficient
· Integrated Gate Resistor
APPLICATIONS
· Invertor
· Convertor
GWB Series Module
· Welder
· SMPS and UPS
· Induction Heating
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditi ons
Values
Unit
IGBT
VCES
Collector - Emitter Voltage
600
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
TC=25°C
540
A
TC=60°C
450
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
1080
A
TC=60°C, tp=1ms
900
A
Ptot
Power Dissipation Per IGBT
1562
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
600
V
TC=25°C
300
A
TC=60°C
240
A
420
A
AC, t=1min
Free-Wheeling Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TJ=45°C, t=10ms, Sine
1000
A
Forward Current
TJ=45°C, t=8.3ms, Sine
1100
A
MIMMG450WB060B6N
ELECTRICAL CHARACTERISTICS
Symbol
TC=25°C unless otherwise specified
Parameter
Test Conditi ons
Min.
Typ.
Max.
Unit
4.5
5.5
6.5
V
2.45
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=9mA
Collector - Emitter
IC=450A, VGE=15V, TJ=25°C
1.95
Saturation Voltage
IC=450A, VGE=15V, TJ=125°C
2.2
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
V
VCE=600V, VGE=0V, TJ=25°C
1
VCE=600V, VGE=0V, TJ=125°C
3
VCE=0V, VGE=±20V
-0.8
1.67
VCC=300V, IC=450A , VGE=±15V
mA
mA
0.8
μA
2.33
Ω
2220
nC
19.5
nF
2.1
nF
1.8
nF
VCC=300V, IC=450A
140
ns
Rise Time
RG =1.5Ω,VGE=±15V
50
ns
td(off)
Turn - off Delay Time
TJ=125°C
250
ns
tf
Fall Time
Inductive Load
55
ns
Eon
Turn - on Switching Energy
Eoff
Turn - off Switching Energy
VCE=25V, VGE=0V, f =1MHz
VCC=300V, IC=450A
TJ=25°C
5
mJ
RG =1.5Ω
TJ=125°C
8.6
mJ
VGE=±15V
TJ=25°C
12
mJ
Inductive Load
TJ=125°C
17.5
mJ
Free-Wheeling Diode
IF=300A , VGE=0V, TJ=25°C
1.25
IF=300A , VGE=0V, TJ=125°C
1.2
V
Reverse Recovery Time
IF=300A , VR=300V
210
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-3000A/μs
210
A
Qrr
Reverse Recovery Charge
TJ=125°C
24
µC
5
KΩ
VF
Forward Voltage
trr
1.6
V
NTC-Characteristic Values
R25
Rated Resistance
TC=25°C
ΔR/R
Deviation of R100
TC=100°C, R100=493Ω
P25
Power Dissipation
TC=25°C
-3
3
%
20
mW
Max.
Unit
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.08
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.2
K /W
Torque
Module-to-Sink
Recommended（M5）
2.5
5
N· m
Torque
Module Electrodes
Recommended（M6）
3
5
N· m
Weight
346
g
900
900
750
750
600
600
T J =25°C
IC (A)
IC (A)
MIMMG450WB060B6N
450
V CE =20V
450
T J =125°C
300
300
150
150
T J =125°C
0
0
0
1.5
2.5
3.5
2
3
VCE(sat)（V）
Figure1. Typical Output characteristics
0.5
1
48
32
V CC =300V
R G =1.5ohm
V GE =±15V
T J =125°C
32
E of f
E on
16
8
E of f
16
14
6
8
10 12
RG（ohm）
Figure4. Switching Energy vs. Gate Resistor
V CC =300V
R G =1.5ohm
V GE =±15V
T J =125°C
td(on )
0
td(on )
100
tf
tr
tf
200 300 400 500 600 700
IC（A）
Figure5. Switching Times vs. Collector Current
4
td(off )
tr
100
2
1000
t (ns)
td(off )
t (ns)
E on
24
0
150
1000
10
0
6
8
10
12
14
VGE（V）
Figure2. Typical Transfer characteristics
8
300 450 600 750 900 1050
IC（A）
Figure3. Switching Energy vs. Collector Current
100
4
V CC =300V
I C =450A
V GE =±15V
T J =125°C
40
24
0
0
2
48
Eon Eoff (mJ)
Eon Eoff (mJ)
40
0
T J =25°C
10
V CC =300V
I C =450A
V GE =±15V
T J =125°C
0
2
6
8
10 12
14
RG（ohm）
Figure6. Switching Times vs. Gate Resistor
4
MIMMG450WB060B6N
100000
25
20
V CC =300V
I C =450A
T J =25°C
10000
R (Ω)
VGE (V)
15
10
1000
5
0
0
1050
75
100 125
150
175
TC（°C）
Figure8. NTC- Temperature Characteristic
ICsc (A)
450
900
600
300
T J =150°C
T C =25°C
V GE =15V
100
T J =150°C
T C =25°C
V GE =15V
tsc ≤10µs
300
0
200 300 400 500 600 700
VCE（V）
Figure10. Short Circuit Safe Operating Area
300 400 500 600 700
VCE（V）
Figure9. Reverse Biased Safe Operating Area
200
630
0
100
630
T J =150°C
V GE ≥15V
540
525
450
420
360
IF (A)
IC(A)
T J =125°C
270
315
210
180
T J =25°C
105
90
0
0
50
1200
600
0
0
25
1500
750
150
0
1800
900
ICpuls (A)
100
900
1800 2250
1350
Qg（nC）
Figure7. Gate Charge characteristics
450
50
75 100 125 150
TC Case Temperature(°C)
Figure11. Rated Current vs. TC
25
175
0
0
1.5 2.0 2.5
3
3.5
VF（V）
Figure12. Diode Forward Characteristics
0.5
1.0
MIMMG450WB060B6N
1
1
-1
10-1
ZthJC (K/W)
ZthJC (K/W)
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-2
10-3
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-2
10-3
10-4 -4
10
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure13. Transient Thermal Impedance of IGBT
10-4 -4
10
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure14. Transient Thermal Impedance of Diode
10/11
3
4
9
7
8
1
2
Figure15. Circuit Diagram
Dimensions in mm
Figure16. Package Outlines
5
6