MIMMG75SR120UZK

MIMMG75SR120UZK
1200V 75A IGBT Module
RoHS Compliant
FEATURES
· Ultra Low Loss
· High Ruggedness
· High Short Circuit Capability
· Positive Temperature Coefficient
· With Fast Free-Wheeling Diodes
APPLICATIONS
· Invertor
· Convertor
· Welder
GS Series Module
· SMPS and UPS
· Induction Heating
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
IGBT
VCES
Collector - Emitter Voltage
1200
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
TC=25°C
105
A
TC=80°C
75
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
210
A
TC=80°C, tp=1ms
150
A
Ptot
Power Dissipation Per IGBT
630
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
1200
V
TC=25°C
90
A
TC=80°C
60
A
90
A
AC, t=1min
Free-Wheeling Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TJ=45°C, t=10ms, Sine
430
A
Forward Current
TJ=45°C, t=8.3ms, Sine
450
A
MIMMG75SR120UZK
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
5
6.2
7
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=3mA
Collector - Emitter
IC=75A, VGE=15V, TJ=25°C
1.8
V
Saturation Voltage
IC=75A, VGE=15V, TJ=125°C
2.0
V
VCE=1200V, VGE=0V, TJ=25°C
0.2
VCE=1200V, VGE=0V, TJ=125°C
2
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=0V, VGE=±20V
Qge
Gate Charge
VCC=600V, IC=75A, VGE=±15V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
-100
0.5
mA
mA
100
nA
780
nC
5.52
nF
0.4
nF
0.26
nF
VCC=600V, IC=75A
150
ns
Rise Time
RG =15Ω,VGE=±15V
65
ns
td(off)
Turn - off Delay Time
TJ=25°C
440
ns
tf
Fall Time
Inductive Load
55
ns
td(on)
Turn - on Delay Time
VCC=600V, IC=75A
160
ns
tr
Rise Time
RG =15Ω,VGE=±15V
65
ns
td(off)
Turn - off Delay Time
TJ=125°C
500
ns
tf
Fall Time
Inductive Load
70
ns
Eon
Turn - on Switching Energy
TJ=25°C
7.45
mJ
RG =15Ω
TJ=125°C
10.3
mJ
Eoff
Turn - off Switching Energy
VGE=±15V
TJ=25°C
4.9
mJ
Inductive Load
TJ=125°C
7.8
mJ
VCE=25V, VGE=0V, f =1MHz
VCC=600V, IC=75A
Free-Wheeling Diode
IF=75A, VGE=0V, TJ=25°C
2.0
2.48
V
IF=75A, VGE=0V, TJ=125°C
1.7
2.20
V
Reverse Recovery Time
IF=75A, VR=800V
200
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-1000A/μs
70
A
Qrr
Reverse Recovery Charge
TJ=125°C
8.2
µC
VF
Forward Voltage
trr
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.2
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.5
K /W
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M5）
2.5
5
N· m
Weight
150
g
MIMMG75SR120UZK
150
150
125
125
100
100
IC (A)
IC (A)
TJ =25°C
75
VCE=20V
75
TJ =125°C
50
50
25
25
TJ =125°C
0
0
0
1.5
2.5
3.5
2
3
VCE(sat)（V）
Figure1. Typical Output characteristics
0.5
1
60
40
VCC=600V
RG=15ohm
VGE=±15V
TJ =125°C
2
4
6
8
10
12
14
VGE（V）
Figure2. Typical Transfer characteristics
20
Eon
20
Eoff
10
10
0
Eoff
70
30
40
50 60
RG（ohm）
Figure4. Switching Energy vs. Gate Resistor
50
1000
Eon
15
5
75 100 125 150 175
IC（A）
Figure3. Switching Energy vs. Collector Current
25
VCC=600V
IC=75A
VGE=±15V
TJ =125°C
25
30
0
0
0
30
Eon Eoff (mJ)
Eon Eoff (mJ)
50
TJ =25°C
0
10
20
1000
td(off)
100
td(on)
t (ns)
t (ns)
td(off)
tf
td(on)
100
tf
tr
tr
10
0
20
VCC=600V
RG=15ohm
VGE=±15V
TJ =125°C
60
80 100 120 140
IC（A）
Figure5. Switching Times vs. Collector Current
40
10
VCC=600V
IC=75A
VGE=±15V
TJ =125°C
70
30
40
50 60
RG（ohm）
Figure6. Switching Times vs. Gate Resistor
0
10
20
MIMMG75SR120UZK
10
25
20
VCC=600V
IC=75A
TJ =25°C
Cies
C (nF)
VGE (V)
15
10
VGE =0V
f=1MHz
1
Coes
Cres
5
0
0
0.2
250
15
20
25
30
35
VCE（V）
Figure8. Typical Capacitances vs. VCE
ICsc (A)
ICpuls (A)
10
800
100
600
400
TJ =150°C
TC =25°C
VGE =15V
200
TJ =150°C
TC =25°C
VGE =15V
tsc≤10µs
200
0
400 600 800 1000 1200 1400
VCE（V）
Figure10. Short Circuit Safe Operating Area
600 800 1000 1200 1400
VCE（V）
Figure9. Reverse Biased Safe Operating Area
400
150
0
200
150
TJ =150°C
VGE ≥15V
125
125
100
100
TJ =125°C
75
IF (A)
IC(A)
5
1000
150
0
0
0
1200
200
50
0.1
0.3 0.4 0.5 0.6 0.7
Qg（µC）
Figure7. Gate Charge characteristics
0.1
75
50
50
25
25
TJ =25°C
0
0
50
75 100 125 150
TC Case Temperature(°C)
Figure11. Rated Current vs. TC
25
175
0
0
1.5 2.0 2.5
3
3.5
VF（V）
Figure12. Diode Forward Characteristics
0.5
1.0
MIMMG75SR120UZK
1
1
-1
-1
10
10-2
ZthJC (K/W)
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-3
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-2
10-3
-4
10-4 -4
10
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure14. Transient Thermal Impedance of Diode
10
10-3
10-4
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure13. Transient Thermal Impedance of IGBT
1
2
3
4
5
Figure15. Circuit Diagram
M5
8.5
23.0
29.5
30.5
2.8x0.5
3
17.0
34.0
2
7 6
1
4.5
94.0
23.0
23.0
17.0
80.0
Dimensions in mm
Figure16. Package Outlines
4.5
4 5
6.5
ZthJC (K/W)
10