MIMMG150DR060DE 600V 150A IGBT Module RoHS Compliant FEATURES · Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GD Series Module · SMPS and UPS · Induction Heating ABSOLUTE MAXIMUM RATINGS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage 600 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 300 A TC=80°C 210 A ICpuls Pulsed Collector Current TC=25°C, tp=1ms 600 A TC=80°C, tp=1ms 420 A Ptot Power Dissipation Per IGBT 1100 W TJ Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage 3000 V 600 V TC=25°C 250 A TC=80°C 170 A 250 A AC, t=1min Free-Wheeling Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IF(RMS) RMS Forward Current IFSM Non-Repetitive Surge TJ=45°C, t=10ms, Sine 1000 A Forward Current TJ=45°C, t=8.3ms, Sine 1090 A MIMMG150DR060DE ELECTRICAL CHARACTERISTICS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit 5.5 V IGBT VGE(th) VCE(sat) Gate - Emitter Threshold Voltage VCE=VGE, IC=500μA 3.5 Collector - Emitter IC=200A, VGE=15V, TJ=25°C 1.9 V Saturation Voltage IC=200A, VGE=15V, TJ=125°C 2.1 V VCE=600V, VGE=0V, TJ=25°C 1 ICES Collector Leakage Current IGES Gate Leakage Current VCE=0V, VGE=±20V Qge Gate Charge VCC=300V, IC=200A , VGE=±15V Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr VCE=600V, VGE=0V, TJ=125°C 4 mA mA -2 2 μA 460 nC 10.6 nF 1.04 nF 0.68 nF VCC=300V, IC=200A 45 ns Rise Time RG =5Ω,VGE=±15V 45 ns td(off) Turn - off Delay Time TJ=25°C 320 ns tf Fall Time Inductive Load 35 ns td(on) Turn - on Delay Time VCC=300V, IC=200A 50 ns tr Rise Time RG =5Ω,VGE=±15V 45 ns td(off) Turn - off Delay Time TJ=125°C 350 ns tf Fall Time Inductive Load 40 ns Eon Turn - on Switching Energy Eoff Turn - off Switching Energy VCE=25V, VGE=0V, f =1MHz VCC=300V, IC=200A TJ=25°C 7 mJ RG =5Ω TJ=125°C 9 mJ VGE=±15V TJ=25°C 5 mJ Inductive Load TJ=125°C 7 mJ Free-Wheeling Diode IF=200A , VGE=0V, TJ=25°C 1.9 2.2 V IF=200A , VGE=0V, TJ=125°C 1.7 2.0 V Reverse Recovery Time IF=200A , VR=400V 70 ns IRRM Max. Reverse Recovery Current diF/dt=-1000A/μs 55 A Qrr Reverse Recovery Charge TJ=125°C 3 µC VF Forward Voltage trr THERMAL AND MECHANICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit RthJC Junction-to-Case Thermal Resistance Per IGBT 0.1 K /W RthJCD Junction-to-Case Thermal Resistance Per Inverse Diode 0.25 K /W Torque Module-to-Sink Recommended（M6） 3 5 N· m Torque Module Electrodes Recommended（M5） 2.5 5 N· m Weight 285 g 600 600 500 500 400 400 TJ =25°C IC (A) IC (A) MIMMG150DR060DE 300 VCE=20V TJ =25°C 300 TJ =125°C TJ =125°C 200 200 100 100 0 0 0 1.5 2.5 3.5 2 3 VCE(sat)（V） Figure1. Typical Output characteristics 0.5 1 120 80 VCC=300V RG=5ohm VGE=±15V TJ =125°C 6 8 10 12 14 VGE（V） Figure2. Typical Transfer characteristics 40 60 Eon 40 20 0 0 2 4 50 Eon Eoff (mJ) Eon Eoff (mJ) 100 0 VCC=300V IC=200A VGE=±15V TJ =125°C 30 Eon 20 10 Eoff Eoff 0 35 15 20 25 30 RG（ohm） Figure4. Switching Energy vs. Gate Resistor 100 200 300 400 500 600 700 IC（A） Figure3. Switching Energy vs. Collector Current 103 0 5 10 103 td(off) t (ns) t (ns) td(off) 102 102 tr td(on) td(on) tf 10 0 60 tf VCC=300V RG=5ohm VGE=±15V TJ =125°C 120 180 240 300 360 420 IC（A） Figure5. Switching Times vs. Collector Current VCC=300V IC=200A VGE=±15V TJ =125°C tr 10 7.5 10 12.5 15 17.5 RG（ohm） Figure6. Switching Times vs. Gate Resistor 0 2.5 5 MIMMG150DR060DE 25 20 100 VGE =0V f=1MHz VCC=300V IC=200A TJ =25°C Cies 10 C (nF) VGE (V) 15 10 Coes 1 Cres 5 0 0 700 15 20 25 30 35 VCE（V） Figure8. Typical Capacitances vs. VCE 2400 400 1800 300 1200 200 TJ =150°C TC =25°C VGE =15V TJ =150°C TC =25°C VGE =15V tsc≤10µs 600 0 200 300 400 500 600 700 VCE（V） Figure10. Short Circuit Safe Operating Area 200 300 400 500 600 700 VCE（V） Figure9. Reverse Biased Safe Operating Area 100 350 0 100 600 TJ =150°C VGE ≥15V 300 500 250 400 200 IF (A) IC(A) TJ =125°C 150 300 200 100 TJ =25°C 100 50 0 0 10 ICsc (A) ICpuls (A) 5 3000 500 0 0 0 3600 600 100 0.1 200 400 300 500 Qg（nC） Figure7. Gate Charge characteristics 100 50 75 100 125 150 TC Case Temperature(°C) Figure11. Rated Current vs. TC 25 175 0 0 1.5 2.0 2.5 3 3.5 VF（V） Figure12. Diode Forward Characteristics 0.5 1.0 MIMMG150DR060DE 1 1 -1 10-1 10-2 ZthJC (K/W) Duty 0.5 0.2 0.1 0.05 Single Pulse 10-3 Duty 0.5 0.2 0.1 0.05 Single Pulse 10-2 10-3 -4 10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure14. Transient Thermal Impedance of Diode 10 10-3 10-4 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure13. Transient Thermal Impedance of IGBT 2 3 1 4 5 7 6 Figure15. Circuit Diagram M6 8.5 30.0 30.5 2.8x0.5 22.0 93.0 6.0 Φ6.5 28.0 3 28.0 108.0 Dimensions in mm Figure16. Package Outlines 6.0 2 4 5 1 20.0 62.0 15.0 7 6 6.0 18 48.0 16.0 ZthJC (K/W) 10